Introduction of Professor
Ｐｒｏｆ
Minghwei Hong
洪 銘 輝 教授
Department of Physics,
National Taiwan University
02-3366-5193 ; 02-2362-6937
mail:mhong@phys.ntu.edu.tw
-EDUCATION-
- Ph.D.Materials Science and Engineering,University of California, Berkeley, June 1980
- M.S. Materials Science and Engineering,University of California, Berkeley, Dec 1978
- B.S. Physics, National Taiwan University, June 1973
-HONORS, AWARDS, and DISTINCTION-
- Web of Science Total citations: 10,200+
2011-present National Taiwan University Distinguished Professorship台灣大學特聘教授.
2016-present Nano Device Laboratory (NDL), 合聘特聘研究員.
2009-2011 Tsing Hua Chair Professorship清華大學講座教授.
2003-2009 TSMC Endowed Chair Professorship台積電講座教授.
1999 Distinguished Technical Staff (DMTS) Award for sustained research achievements by Bell Laboratories, Lucent Technologies. 貝爾實驗室特聘研究員 (The citation reads: "You are being honored for development of a novel oxide, Ga2O3(Gd2 O3), to effectively passivate GaAs having a low interface state density range. You have used this thermodynamically and photo-chemically stable oxide to demonstrate the formation of inversion layers in both n- and p-type GaAs, which have eluded scientists and engineers around the world for more than three decades. You demonstrated the world's first enhancement- and depletion-mode GaAs MOSFETs with stable high current densities without hysteresis. This may have applications (both analog and digital) in high speed electronic components and systems. Your work in material science has continued to keep Bell Labs - Lucent Technologies at the forefront in science and technology.")
Fellow, American Physical Society (The citation reads: "For pioneering in III-V semiconductor metal oxide semiconductor field effect transistors including the landmark discovery of high dielectric constant oxide films on GaAs surface with low interface states and unpinned Fermi level and the first demonstration of inversion-channel GaAs MOSFET, timely for science and technology beyond Si CMOS. ")现 现 现 现
Fellow, IEEE (Institute of Electrical and Electronics Engineers, Inc.) (The citation reads: "for contributions to III-V semiconductor MOSFET transistors")
Fellow, Physical Society of Republic of China, Taiwan (The citation reads: "藉由新穎奈米磊晶，掌控氧化物與Ⅲ-Ⅴ族半導體的介面，奠定下世代元件科學根基，貢獻卓越。")现
705th among the ISI's 1120 Most Cited Physicists (1981-1997) ranked by total citations in physics, astrophysics, materials science, chemical physics, and the related fields. (https://pcb4122.univ-lemans.fr/1120physiciens.htm)
-PROFESSIONAL EXPERIENCE-
August 2011 - present: Professor, Graduate Institute of Applied Physics and Dept. of Phys., National Taiwan Univ., Taipei, Taiwan.
◇Spintronics and Topological insulators
◇Nano-electronics in InGaAs, GaN, GaSb, and Ge MOS for science and technologies beyond 7-5 nm node CMOS
◇Nano-epitaxy and Probing high k dielectrics and semiconductor interface in an atomic scale
June 2003 - Aug. 2011: Professor, Dept. Materials Science and Eng., National Tsing Hua University, Hsin Chu, Taiwan.
Aug. 2009 - July 2010: Director, Ctr. for Nanotechnology, Materials Sci., and Microsystems, Natl Tsing Hua U., Hsin Chu, Taiwan.
Feb. 2001 - March 2003: Distinguished Member of Technical Staff, High Speed Electronic Devices and Photonic Interfaces Research, Agere Systems, Murray Hill, NJ. (Agere became a fully separate, publicly traded company on June 1, 2002.)
July 1999 - January 2001: Distinguished Member of Technical Staff, Semiconductor Research Laboratory, Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey.
Sept. 1981 - June 1999: Member of Technical Staff, Semiconductor Res. Lab. and Materials Res. Lab., Bell Labs, Murray Hill, NJ.
◇Multiple-chamber UHV/molecular beam epitaxy (MBE) system - growing novel, high-quality semiconductors, metals, oxides, and heterostructures of metal/semiconductor, oxide/semiconductor, and metal/oxide/ semiconductor with excellent interfacial properties for both fundamental studies and device applications (high speed, high power electronic devices, and high k dielectrics for Si CMOS and III-V MOS).
◇All vacuum in-situ processing - electron cyclotron resonance (ECR) plasma etching and MBE re-growth - new electronic materials, novel growth techniques, high performance electronic/opto-electronic devices, and innovative processing.
◇High Tc oxide superconductors - thin film synthesis by sputtering and MBE.
◇Magnetic thin films - amorphous rare earth transition metal materials for magneto-optical recording.
◇Magnetic rare earth superlattices grown by MBE - magnetic and spin-structure characterization.
◇A15 superconductors - fabrication and characterization of flexible Nb(Ta)-Sn wires by liquid infiltration.
August 1980 - August 1981: Staff Scientist II, Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California.
◇High Hc, high Jc A15 Nb3Sn and Nb3Al wires by bronze process and solid-state precipitation for high energy physics accelerator and fusion reactor magnets.
-HIGHLIGHTS of RESEARCH ACHIEVEMENTS -
Professor Hong has worked in different research topics, from superconductivity, magnetism, semiconductor lasers, to advanced electronic devices. In 1994, he and his colleagues at Bell Labs discovered a novel oxide of Ga2O3(Gd2O3), which gives the oxide-GaAs hetero-structure a low interfacial density of states in mid-range of 1011 cm-2 eV-1, thus solving a problem which has puzzled researchers for the last 35 years. This has led to the first demonstration of inversion-channel GaAs/InGaAs MOSFETs, the Holy Grail in compound semiconductor electronics.
From 2003 to now, he and Professor J. Raynien Kwo, and their research groups have made landmark contributions to achieve very low interfacial densities of states, very low electrical current leakage, high-temperature (900牵C) stability of the high k/III-V (and Ge) MOS, surface Fermi level unpinning mechanism, sub-nm EOT in the high k's in III-V and Ge, among many other critical properties, essential for the technology beyond 7-5 nm node CMOS. Moreover, they have fabricated self-aligned inversion- channel InGaAs MOSFETs with world-record high drain currents and transconductances.
2015
Achieving drain current enhancement and negligible current collapse in GaN metal-oxide-semiconductor field-effect-transistor with aid of high-quality ALD-oxides/GaN interface.
2014
Greatly improved interfacial passivation of in-situ high dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
Observation of Strongly Enhanced Inverse Spin Hall Voltage in Fe3Si/GaAs Structures
2013
Achieving record high drain current >1.5 mA/贡m and transconductance >1.0 mS/贡m in 1贡m gate length self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited ALD-HfO2 as gate dielectrics
Effectively passivating GaSb with UHV-deposited and ALD-Y2O3, achieving very low interfacial trap densities and record high drain currents in self-aligned inversion-channel GaSb MOSFETs.
2012
Both ALD- and MBE-HfO2 based high-κ dielectrics on In0.53Ga0.47As and In0.2Ga0.8As with low Dit's, excellent thermodynamic stability, and outstanding oxide scalability, thus breaking the myth that tetravalent oxides such as HfO2 could not give an excellent high-κ/InGaAs interface.
First to probe atom-to-atom interactions for atomic layer deposition of trimethylaluminum/H2O on Ga-rich GaAs(001)- 4x6 and As-rich GaAs(001)-2x4 surfaces using in-situ synchrotron-radiation photoemission.
2011
Achieving record high drain current >1.5 mA/贡m in self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with in-situ deposited Al2O3/Y2O3 as gate dielectrics
Direct determination of flat-band voltage for metal/high 岂 oxide/semiconductor heterointerfaces by electric-field- induced second-harmonic generation.
Achieving a record-low interfacial density of states with a flat distribution in汹Ga2O3(Gd2O3) directly deposited on Ge
Atomic-scale determination of band offsets at Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy type
2010
Attainment of low interfacial trap density absent of a large mid-gap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation
In-situ ALD Al2O3 on GaAs - achieving more symmetrical CVs, unparalleled by comparing with other ALD approaches, which give good CVs for p-type, but poor for n-type
In-situ synchrotron photoemission studies on high k's on GaAs and Ge in attaining detailed interfacial atomic/ chemical bonding
Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
2009
Achieving drain current enhancement and negligible current collapse in GaN metal-oxide-semiconductor field-effect-transistor with aid of high-quality ALD-oxides/GaN interface.
Achieving nanometer-thick 0.5 nm CET single-crystal hexagonal Gd2O3 on GaN with exceptional high-temperature thermal stability (1100 牵C) for advanced complementary metal-oxide-semiconductor technology
Achieving nanometer-thick 0.6 nm CET amorphous/single-crystal Ga2O3(Gd2O3) on InGaAs with exceptional high-temperature thermal stability (900 牵C) for advanced complementary metal-oxide-semiconductor technology
Achieving Ga2O3(Gd2O3) on Ge without interfacial layers and also a low EOT of 0.6 nm
2008
First to achieve an EOT of 1.0 nm in both MBE and ALD oxide deposited on InGaAs
Achieving low interfacial trap density in atomic layer deposited (ALD) Al2O3 on In0.53Ga0.47As
Single crystal GaN on Si with nm-thick single crystal Sc2O3 and Al2O3 as a template
UHV high k dielectrics of Ga2O3(Gd2O3), HfO2, and Y2O3 on Ge without interfacial layers - achieving excellent electrical properties
2007
First to demonstrate a self-aligned inversion-channel Ga2O3(Gd2O3)/InGaAs MOSFET with world-record device performance in terms of drain currents of 刚 1mA/贡m and transconductance of 刚 0.7 mS/贡m in a 1 贡m gate length device
First to achieve true inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer- deposited Al2O3 as gate dielectric
First self-aligned inversion n-channel InGaAs/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric
First to use atomic-layer-deposited (ALD) HfO2 on In0.53Ga0.47As: passivation and energy-band parameters
2006
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant of 34
First to determine energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs heterostructures
2005
First to achieve high-temperature thermodynamic stability and low interfacial density of states in Ga2O3(Gd2O3)/GaAs interface - a must for compound MOSFET's
Growth of perfected nano-thick single crystal oxide films (gamma Al2O3 and Sc2O3) on Si
First to understand the mechanism of Fermi-level unpinning in ALD grown Al2O3 on InGaAs
2004
First to grow a all single crystal heterostructure in GaN/Rare Earth Oxides (Gd2O3, Y2O3)/GaN with sharp interfaces and a low interfacial density of states in each interface
2003
Fabrication of GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition (ALD)
2002
First to grow a all single crystal heterostructure in GaN/Rare Earth Oxides (Gd2O3, Y2O3)/GaN with sharp interfaces and a low interfacial density of states in each interface (opening up a possibility of building three-dimensional integrate circuits)
Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100)
2001
First to achieve a chemically abrupt, atomically sharp oxide/Si interface with a low interracial density of states using an e-beam/UHV (MBE) approach (a very significant accomplishment in microelectronics in replacing SiO2 with high-k gate dielectrics)
2000
First to demonstrate a GaAs CMOS inverter
First to grow hcp single crystal rare earth oxides (a high temperature phase) on GaN with a low interfacial density of states
First to grow a new fcc Gd2O3 phase on GaAs
1999
New high 岂汹(dielectric constant) gate dielectrics Gd2O3 and Y2O3 for Si. Using ultrahigh vacuum vapor deposition, for instance, amorphous Y2O3 films 45 A thick (with a 岂 ~ 18-19) showed a remarkably low leakage current of 10-6 -10-7 A/cm2 at 1V for a teq of only 10 A. This data is, at least, 5 orders of magnitude better than the best SiO2 gate dielectric 15 A thick.
Demonstrated a low interfacial density of states in MOS diodes of (Ga,Gd)2O3 and SiO2 on GaN using ultrahigh vacuum vapor deposition.
First to demonstrate a GaN MOSFET operated at 400°C.
Fabricated GaAs power MOSFETs with a gate periphery up to 2 cm, under a 5V drain bias showing maximum output power of 26.5 dBm and peak power added efficiency (PAE) of 56%.
Fabricated sub-micron depletion-mode GaAs MOSFET's (0.8 x 60 贡m2). First such devices exhibit negligible drain current drift and hysteresis, and show a drain current density of 450 mA/mm, a transconductance of 130 mS/mm, a fT of 17 GHz, and a fmax of 60 GHz. These excellent device characteristics show a significant advance towards the manufacture of commercially useful GaAs MOSFET's.
1998:
First to demonstrate depletion-mode GaAs MOSFET's with accumulation mode up to +3V or higher. For the first time, the D-mode GaAs MOSFET's exhibiting negligible drain current drift and hysteresis.
First to grow a single-domain single-crystal Gd2O3 (a Mn2O3 structure) epitaxially on GaAs with a low interfacial density of states (Dit).
First to observe single-domain single-crystal epitaxial growth of (Ga,Gd)2O3 on GaAs for the first few mono-layers. The probing using XPS shows very little Ga, indicating that the epitaxial growth of the first few mono-layers of Gd2O3 on GaAs may be responsible for the low Dit.
Greatly improve drain current to 3 mA (from 10-20 贡A in the 1996 device) in enhancement-mode GaAs MOSFET.
1997:
First to demonstrate enhancement-mode InGaAs MOSFETs with inversion on semi-insulating InP substrates. For the first time, no drain-current drifting or hysteresis was observed in the enhancement-mode InGaAs MOSFET's.
1996:
First to demonstrate enhancement-mode n- and p-channel GaAs MOSFETs with inversion. This will open up applications (both analog and digital) in low-power, high speed/frequency components and systems.
1995:
For the first time, the formation of inversion layers in both n- and p-type GaAs has been clearly demonstrated. This was made possible by a discovery of a novel oxide of (Ga,Gd)2O3, which gives the oxide-GaAs heterostructues of a low interfacial density of states in mid 1010 cm-2 eV-1 range and an interface recombination velocity of 4500 cm/sec. The interfaces are thermodynamically and photo-chemically stable.
Developed an in-situ cleavage tool in MBE chamber to cleave laser bars and subsequently to in-situ deposit oxides on laser facets to prolong the laser lifetime.
1994:
Fabricated record low total electrical resistivity vertical cavity surface emitting lasers.
Fabricated surface emitting lasers with DBR mirrors of GaAs/AlGaAs and InGaP/GaAs/InGaAs active region with the DBR grown by MBE and the active region grown by MOVPE.
Developed materials for high-temperature (6500C) non-alloyed ohmic contacts for GaAs based materials.
1993:
Fabricated and demonstrated the operation of vertical cavity zone lasers. This new class of high power (>100 mW) high efficiency (>36 %) large area (70 贡m in diameter) SELs have an output that is automatically focused to a spot at a particular distance away from the laser.
Fabricated extremely low electrical resistivity non-alloyed ohmic contacts to both p- and n-GaAs, which have an atomically smooth and chemically abrupt metal-semiconductor interface.
Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs.
1992:
Demonstrated the first CW buried AlGaAs/GaAs/InGaAs laser diode in both edge emitting and vertical cavity surface emitting configurations using in-situ electron cyclotron resonance (ECR) anisotropic etch and molecular beam epitaxial regrowth.
Demonstrated a complete removal of GaAs surface contaminants using ECR hydrogen plasma treatment followed by chemical chlorine etching.
Demonstrated a design optimization for high-power and high-speed surface emitting lasers.
1991:
Growth of vertical cavity surface emitting laser (SEL) to demonstrate ultrafast (up to 39 GHz) relaxation oscillation.
Electron cyclotron resonance plasma processing of air-exposed AlGaAs (up to 100 at% Al) and AlGaAs regrowth by molecular beam epitaxy (MBE).
Demonstrated the longest wavelength QWIP ever measured with a cutoff wavelength of 财c=14.9 贡m.
1990:
Proposed and demonstrated for the first time a novel edge-emitting periodic index separate confinement heterostructure (PINSCH) semiconductor quantum well laser.
Developed a new cell temperature modulation MBE technique (without shutter operation) to grow any multi-layers with continuously graded interfaces to greatly reduce the series resistance and applied this new technique to the growth of vertical cavity SEL and PINSCH lasers. (This is a very simple technique yet an important technology, which is now being applied to and commonly used in the MOCVD growth of low-resistivity SEL.)
Introduced hybrid thin metal (<300 A)/semiconductor mirrors for vertical-cavity surface emitting lasers to emit light from the top.
Growth of a new intermetallic compound Fe3(Al,Si) films epitaxially on GaAs in which one mono-layer was found to be atomically smooth.
1989:
Developed and set up a multi-chamber MBE system consisting of solid-source III-V compound semiconductor, metal, and an ECR etching chamber.
1988:
First to report single-phase high Tc Tl2Ba2Ca2Cu3O10 films carrying high Jc of 105 A/cm2 at 100K.
Contributed to in-situ epitaxial growth of YBa2Cu3O7 films by MBE with an activated oxygen source.
1987:
Reported the first growth of YBa2Cu3O 7-x films by sputtering with Tc over 77K.
1986:
Contributed to the first discovery of magnetic interlayer exchange coupling in rare-earth superlattices of Gd-Y, Gd-Dy, Ho-Y, and Dy-Y.
1985:
Contributed to the first successful growth of magnetic superlattices by metal MBE.
1983-84:
First to report the microstructural dependence of magnetic anisotropic properties and aging of amorphous rare-earth transition metal films, which are used as media for magneto-optical recording.
1982:
Used the concept of Ta doping and Jc vs microstructure to greatly enhance the liquid-infiltration processed Nb-Sn wires to carry 105 A/cm2 at 20T and 4.2K.
1981:
Designed a novel heat treatment to optimize the microstructure in the bronze-processed Nb-Sn wires for carrying higher Jc at high magnetic fields.
1979-80:
Developed direct sod state precipitation technique to fabricate ductile superconducting A15 wires in the V-Ga and Nb-Al systems.
-RESEARCH ACHIEVEMENTS LEADING TO PRESS RELEASE FROM BELL LABS -
(AT&T and LUCENT TECHNOLOGIES)
1) March 1999: We have grown thin single crystal Gd2O3 (<2nm) epitaxially on GaAs. For the first time, a low interfacial density of states was achieved on a thin single crystal oxide deposited on semiconductors.
2) December 1998: For the first time, the depletion-mode GaAs MOSFET's exhibit negligible drain current drift and hysteresis, which is a significant advance towards the manufacture of commercially useful GaAs MOSFETs.
3) December 1996: First demonstration of both n- and p-channel enhancement-mode GaAs MOSFETs with inversion on semi-insulating GaAs substrates. In achieving this, we have solved a puzzle sought after for over 30 years.
4) October 1993: Scientists at AT&T Bell Labs have made the world's first self-focusing lasers. The experimental devices, called zone lasers (Z-lasers), are unlike conventional lasers in that they need no lenses to focus their light on a specific spot.
- | Top || Vita || Experience || Research || Activity || Invited Talks ||
-PROFESSIONAL ACTIVITIES-Advisory Committee Member, "International Conference on Molecular Beam Epitaxy", August 2004 - now.
Organizer, and Chair, Symposium on "High k dielectrics/InGaAs for ultimate CMOS - characteristics and devices", 2013 IEEE Nanotechnology Materials and Devices Conference (NMDC), NCKU, Tainan, Taiwan, October 6-10, 2013. · 台灣電子材料與元件協會,學術委員會, 2012-2014
Organizer, and Chair, Symposium on "Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory", Materials Research Society Spring Meeting, San Francisco, USA, April 1-5, 2013.
IEEE Semiconductor Interface Specialists Conference (SISC) program committee, 2012-2014
National Synchrotron Radiation Research Center (NSRRC) users committee member, 2009-2011
Organizer, 5th International Workshop on "High k on high carrier mobility channels", June 8-10, 2011.
Organizer, Workshop on Synchrotron Nanoscopy, X-ray Investigation toward Nano-World, the NSRRC 16th Users' Meeting, Hsinchu, Taiwan, Oct. 20-21, 2010.
Organizer, Workshop on "X-ray Investigation toward Nano-World", National Synchrotron Radiation Research Center Hsinchu, Taiwan, Oct. 20-21, 2010.
Moderator, Session 10 on "Electronics and Magnetic" in Long-term Impacts and Future Opportunities for Nanotechnology, US-Japan-Korea-Taiwan Workshop, Tsukuba, Japan, July 26-27, 2010 (sponsored by JST Japan, NSF US, MEST Korea and NSC Taiwan)
Organizer, 4th International Workshop on "High k on high carrier mobility channels", May 25-27, 2010.
Organizer, 3rd Hsinchu-Tsukuba workshop on Nano, April 2-3, 2010
Organizer and Chair, Symposium on "High-k Dielectrics on Semiconductors with High Carrier Mobility", Materials Research Society Fall Meeting, Boston, USA, November 30 - December 4, 2009.
Chair, Forum on Green energy saving Nano-electronics, Taiwan Nano (2009 International Nano Week in Taiwan), Oct. 7-9, 2009, World Trade Center, Taipei.
Chair, Asia Nano Camp, National Tsing Hua University, 9/29, 2009.
Session Chair, Workshop on "The Application of X-ray scattering on Epitaxial Growth and Nanostructures" National Synchrotron Radiation Research Center, September 22th, 2009.
Conference Chair, Nano-electronics Forum - I, Nano-electronics for Advanced Logic and Memory Devices, National Tsing Hua University, May 6th, 2009.
Conference Chair, "Joint American Vacuum Society (AVS)/Taiwan (Republic of China) Annual Physical Society Meeting on "Beyond Si CMOS"", National Changjua University of Education, January 20-21, 2009.
Conference Chair, "3nd International Workshop of High k dielectrics on high-mobility channel materials", National Tsing Hua University, Hsinchu, Taiwan, January 19, 2009.
Panelist on III-V Channel Materials for Future CMOS, Sematech-AIXTRON, IEEE/EDM, December 14th, 2008, San Francisco, CA, USA.
Symposia Organizer and Session Chair, Taiwan Nano 2008 and 2008 Annual Meeting of National Nanoscience and Nanotechnology Program. Taiwan Nano 2008 (台灣國際奈米週) includes four main themes (四大主題活動):「台灣奈米科技展」、「國際奈米科技研討會暨商機論壇」(International Nanotechnology Workshop and Business Opportunity Forum)、「第三屆全國奈米科技創意應用競賽」以及「奈米國家型科技計畫成果發表會」。"其中「國際奈米科技研討會暨商機論壇」(6/12 ~ 6/13)邀請國內外學者專家以全球/地區性的趨勢與成長為主題，產業應用與商機為重點，為激盪並加速結合國內外科學技術的知識與經驗，提昇及建立未來產 業發展之機會。會議第一天以"Semiconductor Industry Beyond Si CMOS"為主題，第二天以"Challenges and Opportunities in Nanotechnology Transfer"為主題。National Taiwan University, Taipei, Taiwan, June 12-14, 2008.
Conference Chair, "2nd International Workshop of High k dielectrics on high-mobility channel materials", National Tsing Hua University, Hsinchu, Taiwan, May 23-25, 2007.
Program Committee Member, "The Ninth International Conference on Surface X-Ray and Neutron Scattering", Taipei, Taiwan, July 16-20, 2006.
Program Committee Member, "Molecular Beam Epitaxy (MBE) Taiwan 2006".
Conference Chair, "1st International Workshop of High k dielectrics for high mobility channel materials", June 1-3, 2006, ChungLi, Taiwan, ROC.
Panelist on III-V Device Technology at New Channel Materials for Future MOSFET Technology Workshop, IEEE/IEDM, December 4th, 2005, Washington DC, USA.
Committee chair and Organizer of the Electro-Optical Semiconductor Materials, Devices, and Modules, "OECC 2006" (Opto-Electronics and Communication Conference), Kaohsiung, Taiwan, July 3-7, 2006.
技術諮詢 委員，行政院原子能委員會核能研究所環境與能源科技中心July 2005 - December, 2007.
Conference Chair, "Molecular Beam Epitaxy (MBE) Taiwan 2005", Hsin Chu, Taiwan, May 19-20, 2005.
Advisory Committee Member, "International Conference on Molecular Beam Epitaxy", August 2004 - now.
Program Committee Member, "Molecular Beam Epitaxy (MBE) Taiwan 2004".
Senior consultant, Industrial Technology Research Institute, June 2003 - 2006.
Symposium Chairman and Organizer, IUMRS-ICA (International Union MRS - International Conference in Asia) 2004, Hsin Chu, Taiwan, November, 2004.
Symposium Chairman, "Compound Semiconductor Surface Passivation and Novel Device Processing", Materials Research Society Spring Meeting, San Francisco, April 1999.
Advisory Committee Member, The Magnetism and Magnetic Materials Conference, 1987 - 1992.
Symposium Chairman, "Metal Multilayers and Epitaxy", The Metallurgical Society annual meeting, Denver, Colorado, Feb. 1987.
Workshop Organizer, "Magnetic Thin Films and Magnetic Recording", National Taiwan University, Taipei, Taiwan, Dec. 18-22, 1989.
Electronic Device Materials Committee Member, The Metallurgical Society, 1985 - 1990.
Member of The Advisory Council on Research (ACR) for the research organization of Bell Laboratories, 1987-1988.
Magnetic Materials Committee Member, The Metallurgical Society, 1989 - 1992.
Electronic and Photonic Device Materials Committee Member, The Metallurgical Society, 1990 - 1992.
Program Committee Member for North American Conference on Molecular Beam Epitaxy 1995.
Life member of the American Physical Society and the Chinese Materials Science Society, Fellow of the Institute of Electrical and Electronic Engineers, member of the Materials Research Society, and former member of the Metallurgical Society.
- | Top || Vita || Experience || Research || Activity || Invited Talks ||
-INVITED TALKS-
1. "A15 Nb3Sn formed by solid-liquid reaction and solid-state diffusion", Research Division 115 seminar (simulcast to Holmdel, NJ), Bell Laboratories, Murray Hill, NJ, February 10, 1983.
2. "Phase Formation and Superconductivity in Reactively Diffused Nb-Sn and Nb-Al Multilayered Films" Joint Seminar at Depts. Materials Science, Electrical Engineering, and Physics, M.I.T., Nov. 4, 1985.
3. "Magnetic Properties of Single Crystal Gd-Y and Dy-Y Superlattices" with J. Kwo, R. M. Fleming, J. V. Waszczak, F. J. Disalvo, C. F. Majkrzak and J. W. Cable, The Metallurgical Society Fall Meeting, Orlando, Florida, Oct. 5-9, 1986.
4. "Synthetic Metallic Superlattices" with J. Kwo, The Metallurgical Society Fall Meeting, Orlando, Florida, Oct. 5-9, 1986.
5. "Epitaxial Growth between hcp Rare Earth and bcc Niobium" with S. Nakahara and J. Kwo, The Metallurgical Society Annual Meeting, Denver, Colorado, Feb. 22-26, 1987.
6. "High Tc Superconductor Oxide Films" Colloquium Dept. Phys., Simon Fraser Univ., Canada, Sept. 11, 1987.
7. "High Tc Superconductor Oxide Films" Dept. Phys., Univ. of British Columbia, Canada, Sept. 11, 1987.
8. "Superconducting Properties and Structural Characteristics of High Tc Oxide Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy and Sputtering" with J. Kwo, Symposium on High Tc Superconductor Oxides, State Univ. of NY at Buffalo, Sept. 28-29, 1987.
9. "Magnetic Multilayers and Epitaxy" The Metallurgical Society Fall Meeting, Cincinnati, Ohio, Oct. 12-16, 1987.
10. "High Tc Superconducting Oxide Thin Films of Y1Ba2Cu3O7-x Prepared by Sputtering and Molecular Beam Epitaxy" with J. Kwo, S. H. Liou, T. C. Hsieh, R. M. Fleming, B. A. Davidson and L. C. Feldman, The Metallurgical Society Fall Meeting, Cincinnati, Ohio, Oct. 12-16, 1987.
11. "Road from Amorphous Rare Earth Transition Metal Films to Single Crystal Magnetic Superlattices and to High Tc Superconducting Oxide Thin Films" Dept. Elec. & Comp. Eng., Carnegie-Mellon Univ., Oct. 20, 1987.
12. "High Tc Superconductor Oxide Films by Molecular Beam Epitaxy and Sputtering" Depts. Mat. Sci. and Phys., Stevens Institute of Tech., Hoboken, NJ, Oct. 28, 1987.
13. "Thin Film Research of High Tc Superconductors" with J. Kwo, the 34th National Symp., American Vacuum Society, Anaheim, CA, Nov. 6, 1987.
14. "Magnetic Superlattices" with C. F. Majkrzak, D. Gibbs, P. Boni, A. I. Goldman, J. Kwo, T. C. Hsieh, R. M. Fleming, D. B. McWhan, Y. Yafet, J. W. Cable, J. Bohr, H. Grimm and C. L. Chien, 32nd Annual Conf. on Magnetism & Magnetic Materials, Chicago, IL, Nov. 9-12, 1987.
15. "Interlayer Exchange in Magnetic Superlattices" with Y. Yafet, J. Kwo and C. F. Majkrzak, 32nd Annual Conf. on Magnetism & Magnetic Materials, Chicago, IL, Nov. 9-12, 1987.
16. "High Temperature Superconductor Oxide Films by Sputtering, Spin-On/Pyrolysis Technique, e-beam and Thermal Evaporation, and Molecular Beam Epitaxy" with J. Kwo, et al, Symp. of the Phys. & Chem. of High Tc Superconducting Films, The NY Chapter of the Am. Vac. Soc., AT&T Bell Laboratories, Murray Hill, NJ, Nov. 18, 1987.
17. "Amorphous Rare Earth Transition Metal Films for Magneto-Optical Recording: Fabrication, Microstructure, Stability and Magnetic Properties" with H-P. D. Shieh, The Metallurgical Society Annual Meeting, Phoenix, AZ, January 25-27, 1988.
18. "Thin Film Research on High Tc Superconductors", 38th Electronic Components Conf., Los Angeles, CA, May 9-11, 1988.
19. "Materials Science in Amorphous Rare Earth Transition Metal Films and High Tc Superconducting Oxide Films", Dept. of Materials Science & Engineering, University of Pennsylvania, Philadelphia, PA, March 1, 1988.
20. "Materials Science in High Tc Superconducting Oxide Films and Amorphous Rare Earth Transition Metal Films", Colloquium, Dept. of Physics, University of Houston, Houston, Texas, April 12, 1988.
21. "Thin Film Research on High Tc Superconductors", Lawrence Berkeley Laboratory, Univ. of CA, Berkeley, May 6, 1988.
22. "Research on High Tc Superconducting Oxide Films", 12th International Colloquium on Magnetic Films and Surfaces at Le Creusot Chateau de la Verrerie, Burgandy, France, August 15, 1988.
23. "Thin Film Research on High Tc Superconductors", with J. Kwo, Materials Research Soc., The Metallurgical Soc., and Amer. Soc. for Metal International, 4th Annual Northeast regional meeting on "Processing and Applications of High Tc Superconductors: Status and Prospects", Rutgers, The State Univ. of New Jersey, May 9-11, 1988.
24. "Magnetic Superlattices", Dept. of Phys., National Taiwan Univ., June 10, 1988.
25. "Recent Advances in High Tc Superconducting Oxide Films", AT&T Technology, Engineering Research Center, Hopewell, NJ, June 29, 1988.
26. "Magnetic Rare Earth Superlattices", with J. Kwo, International Conf. on Magnetism, Paris, France, July 25-29, 1988.
27. "High Critical Current Superconducting Tl2Ba2Ca2Cu3O10 Films", with S. H. Liou, D. D. Bacon, G. S. Grader, J. Kwo, and A. R. Kortan, American Society for Metals International and The Metallurgical Society Fall Meeting, Chicago, Illinois, September 26-30, 1988.
28. "High Critical Current Density Tl2Ba2Ca2Cu3O10 Films by Sputtering and in-situ Epitaxial Growth of Y1Ba2Cu3O7 by Molecular Beam Epitaxy", with J. Kwo, Conference on the Science and Technology of Thin Film Superconductors, Colorado Spring, Colorado, November 14-18, 1988.
29. "Magnetic Superlattices", Symposium on Frontiers in Physics in celebration of the 60th anniversary of the founding of National Taiwan University, Taipei, Taiwan, Rep. of China, November 7-15, 1988.
30. "High Tc Superconducting Oxide Films", Symposium on Frontiers in Physics in celebration of the 60th anniversary of the founding of National Taiwan University, Taipei, Taiwan, Rep. of China, November 7-15, 1988.
31. "Magnetic Superlattices by Molecular Beam Epitaxy", Metallurgy, Materials Science and Solid State Science Colloquium, Columbia University, New York, January 25, 1989.
32. "Recent Progress on High Tc Superconducting Oxide Films", Department of Physics, Johns Hopkins University, Feb. 22, 1989.
33. "Preparation and Characterization of Superconducting Thin Films in Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O Systems", with J. Kwo, C. H. Chen, D. D. Bacon, and S. H. Liou, 16th International Conference on Metallurgical Coatings, San Diego, CA, April 18-21, 1989.
34. "Research on High Tc Superconducting Oxide Thin Films", Department of Physics, National Cheng-Kung University, Tainan, Taiwan, Rep. of China, April 14, 1989.
35. "Research on High Tc Superconducting Oxide Thin Films", 5th Annual Symposium on Magnetism and Magnetic Materials, Taipei, Taiwan, Rep. of China, April 19-20, 1989.
36. "Research on High Tc Superconducting Oxide Thin Films", Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, April 21, 1989.
37. "Superconducting Thin Films in Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O Systems", Taiwan International Symposium on Superconductivity, Industrial Technology Research Institute, Hsinchu, Taiwan, Rep. of China, April 17-19, 1989.
38. "Epitaxy of Superconducting Tl2Ba2Ca2Cu3O10 Thin Films on SrTiO3", Electronic Materials Conference - Symposium on Thin High Tc Superconducting Films, Massachusetts Institute of Technology, Cambridge, MA, June 21-23, 1989.
39. "High Tc Superconducting Oxide Films", Colloquium, Department of Materials Science and Engineering, University of Wisconsin at Madison, Sept. 7, 1989.
40. "High Tc Superconducting Oxide Films", Colloquium, Department of Physics, University of Nebraska, Lincoln, Sept. 21, 1989.
41. "Molecular Beam Epitaxy in Metals and Compound Semiconductors", Department of Physics, University of Nebraska, Lincoln, Sept. 22, 1989.
42. "Tl-Based Superconducting Films by Sputtering and Laser Evaporation", with S. H. Liou, K. W. Lee, J. A. Woolam, N. J. Ianno, J. Kwo, A. R. Kortan, and C. H. Chen, Third Annual Conference on Superconductivity and Applications at SUNY Buffalo, New York, Sept. 19-21, 1989.
43. "In-Situ Epitaxial Growth of High Temperature Superconducting Oxide Thin Films by Molecular Beam Epitaxy", with J. Kwo and D. J. Trevor, 3rd Annual Conf. on Superconductivity and Applications at SUNY Buffalo, New York, Sept. 19-21, 1989.
44. "Growth and Characterization of High Tc Superconducting Oxide Films", 1989 Winter School of High Temperature Superconductivity, National Tsing Hua University, Hsinchu, Taiwan, Dec. 19, 1989.
45. "Novel Magnetic Heterostructures", Workshop on Magnetic Thin Films and Magnetic Recording, National Taiwan University, Taipei, Taiwan, Dec. 22, 1989.
46. "Materials Science of Magnetic Thin Films", TMS Annual meeting, Anaheim, Ca, Feb. 19-22,1990.
47. "Synthesis of HTSC Films by Molecular Beam Epitaxy and Sputtering", with J. Kwo, New England Combined Chapter, American Vacuum Society 1990 Annual Symposium, Burlington, Massachusetts, June 18-19, 1990.
48. "Periodic Index Separate Confinement Heterostructure Quantum Well Lasers Grown by Molecular Beam Epitaxy", Department of Electrical Engineering, National Cheng Kung University, July 29, 1991.
49. "Temperature Modulation MBE and Its Application to the Growth of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers", Department of Elec. and Comp. Eng., Univ. Calif., Berkeley, Sept. 6, 1991.
50. "Metal-Semiconductor Heteroepitaxy", Department of Physics, National Taiwan University, Oct. 29, 1991.
51. "Temperature Modulation Molecular Beam Epitaxy", Symposium on Condensed Matter and Applied Physics, November1-2, 1991, National Taiwan University, Taipei, Taiwan, ROC.
52. "New Materials, Novel Growth Techniques, High Performance Devices, Innovative Processing, and New Physics Realized by Molecular Beam Epitaxy", International Symposium on "Trends in Surface Science" March 31 - April 2, 1992, Institute of Physics, Academic Sinica, Taipei, Taiwan, ROC.
53. "Molecular Beam Epitaxy and In-Situ Processing: a New Way to Produce Advanced Materials for Physics and Devices", Oct. 20, 1992 in Department of Physics, National Taiwan University.
54. "Molecular Beam Epitaxy and In-Situ Processing: a New Way to Produce Advanced Materials for Physics and Devices", Oct. 21, 1992 in Institute of Physics, Academia Sinica, Taipei.
55. "Molecular Beam Epitaxy and In-Situ Processing: a New Way to Produce Advanced Materials for Physics and Devices", Oct. 22, 1992 in Department of Electronic Physics, National Chiao-Tung University, Hsin-Chu, Taiwan.
56. "Molecular Beam Epitaxy and In-Situ Processing: a New Way to Produce Advanced Materials for Physics and Devices", Oct. 23, 1992 in Industrial Technological Research Institute, Hsin-Chu, Taiwan.
57. "Factory in a Bottle - a New Frontier of Materials Science Research", TMS The Minerals, Metals, Materials Society, Symposium on "Metallurgy of the Less Common Metals and Emerging New Applications, Oct. 17-21, 1993.
58. "In-Situ Processing of AlGaAs-Based Compound Semiconductors", 1994 MRS Spring Mtg. San Francisco, Ca., April 4-8, 1994.
59. "In-Situ Process with Molecular Beam Epitaxy", High Speed Opto-Electronic Devices for Communications and Interconnects, San Luis Obispo, Ca., Aug. 14-19, 1994 sponsored by Engineering Foundation.
60. "New Frontiers of Molecular Beam Epitaxy with In-Situ Processing", VIIIth International Conf. on MBE, Osaka, Japan, Aug. 20 to Sept. 2, 1994.
61. "Recent Advances of In-Situ Process with Molecular Beam Epitaxy", IEEE Lasers and Electro-Optics Society (LEOS'94) 7th Annual Mtg. Boston, MA, Oct. 31-Nov. 4, 1994. Conf. Proc. IEEE, V2, p.348.
62. "New Frontiers of Molecular Beam Epitaxy with In-Situ Processing", Opto-Electronics and Systems Laboratories, ITRI, Hsinchu, Taiwan, Dec. 16, 1994.
63. "New Frontiers of Molecular Beam Epitaxy with In-Situ Processing", Colloquium, School of Electrical Engineering, Cornell University, January 31, 1995.
64. "Towards GaAs Based Metal-Oxide-Semiconductor Technology", with M. Passlack, AT&T Bell Labs, Murray Hill, NJ, April 17, 1995.
65. "Recent Development in Molecular Beam Epitaxy with In-Situ Processing", Department of Electrical Engineering, National Cheng Kung University, May 25, 1995.
66. "Towards GaAs Based Metal-Oxide-Semiconductor Technology", Opto-Electronics and Systems Laboratories, ITRI, Hsinchu, Taiwan, May 29, 1995.
67. "Molecular Beam Epitaxy with In-Situ Processing", Workshop on "The control of stoichiometry in semiconductor heterostructures: interfacial chemistry - property relations", Suhl, Germany, Aug. 21-26, 1995.
68. "Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy", with M. Passlack, presented at Materials Res. Soc. Spring Mtg., San Francisco, CA, April 8-12, 1996.
69. "Novel heterostructures produced using in-situ molecular beam epitaxy", with M. Passlack, D. Y. Noh, J. Kwo, and J. P. Mannaerts, the 189th Electrochemical Soc. Spring Mtg., Los Angeles, CA, May 5-10, 1996.
70. "Novel heterostructures produced using in-situ molecular beam epitaxy", presented at "Pattern formation and nanoscaled structures in thin film formation", Scanning Microscopy Meeting, Bethesda, Maryland, May 12-16, 1996.
71. "Low interface state density oxide-GaAs heterostructures", Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, June 4, 1996.
72. "Molecular beam epitaxy with in-situ processing", national science council distinguished lectures, Department of Physics, National Cheng-Kung University, Tainan, Taiwan, June 5-6, 1996.
73. "Novel heterostructures fabricated using in-situ molecular beam epitaxy", Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, June 7, 1996.
74. "Novel oxide-GaAs heterostructures with low interface state density and thermodynamical stability", Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, June 10, 1996.
75."Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates", F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, 191st Meeting of the Electrochemical Society, Montreal, Quebec, Canada, May 4-9, 1997.
76. "GaAs MOSFETs", M. Hong, F. Ren, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, Invited talk at 24th International Symposium on Compound Semiconductors 7-11 September 1997, San Diego, CA,
77. "III-V compound semiconductor MOSFETs using Ga2O3(Gd2O3) as gate dielectric", F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, Invited talk at the plenary session of 1997 IEEE (19th annual) GaAs IC Symposium 12-15 October 1997, Anaheim CA.
78. "Growth of novel Ga2O3(Gd2O3) using MBE - key to the first demonstration of GaAs MOSFET", M. Hong, Dept. Electrical and Computer Engineering, University of Ill, Urbana-Champaign, Oct. 9, 1997.
79. "Ga2O3(Gd2O3) as a gate dielectric for GaAs MOSFETs" (Invited Paper), M. Hong, J. Kwo, C. T. Liu, M. A. Marcus, T. S. Lay, F. Ren, J. P. Mannaerts, K. K. Ng , Y. K. Chen, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, "State-of-the-art program on compound semiconductors XXVII symposium", at The Electrochemical Society, 193rd Meeting, San Diego, May 3-8, 1998.
80. "Ga2O3(Gd2O3) as a novel material for effective GaAs passivation" and "III-V compound semiconductor MOSFETs using Ga2O3(Gd2O3) as gate dielectric", M. Hong, Institute of Opto-Electrical Engineering and Center for Semiconductor Research, Sun Yat-Sen University, Kaohsiung, Taiwan, March 19 and 20, 1998.
81. "MBE-Grown Ga2O3(Gd2O3) - a Novel Oxide for GaAs Passivation and Key to First Demonstration of GaAs MOSFETs", M. Hong, Solid-State Colloquium, National Research Council, Canada, April 9, 1998.
82. "GaAs MOSFET's using Ga2O3(Gd2O3) as Gate Dielectric (Invited)", M. Hong, ICSICT'98. 5th Interantional Conf. On Solid-State and Integrated-Circuit Technology, Beijing, China, Oct. 21-23, 1998.
83. "Temperature effect of metal contacts on GaN", F. Ren, S. N. G. Chu, J. R. Lothian, S. J. Pearton, C. R. Abernathy, A. G. Baca, J. Han, M. J. Schurman, M. Hong, X. A. Cao, B. P. Gilla, and T. M. Ake, "III-V Nitride Materials and Processes", at The Electrochemical Society 194th Meeting, Boston, Massachusetts, Nov. 1-6, 1998.
84. "Compound Semiconductor MOSFET's using (Ga,Gd)2O3 as gate dielectric", M. Hong, Int'l. Electron Devices and Materials Symp., Tainan, Taiwan, R.O.C., 12/20-23/98.
85. "Recent advances in the research of oxides for GaAs MOSFETs", M. Hong, Joint seminar for Depts. of Phys. EE, Institute of Opto-Electrical Engineering and Center for Semiconductor Research, National Sun Yat-Sen University, Kaohsiung, Taiwan, Dec. 23, 1998.
86. "The (Ga2O3)1-x(Gd2O3)x oxides with x=0-1.0 for GaAs passivation", J. Kwo, M. Hong, A. R. Kortan, D. W. Murphy, J. P. Mannaerts, A. M. Sergent, Y. C. Wang, and K. C. Hsieh, Source: COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume: 573 Pages: 57-67 Published: 1999. Invited talk at Symposium Z "Compound semiconductor surface passivation and novel device processing" of Materials Research Society 1999 Spring Meeting, April 5-7 at San Francisco, CA.
87. "Structure of single crystal Gd2O3 films on GaAs (100)", A. R. Kortan, M. Hong, J. R. Kwo, J. P. Mannaerts, and N. Kopylov, Source: COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume: 573 Pages: 21-30 Published: 1999. Invited talk at Symposium Z "Compound semiconductor surface passivation and novel device processing" of Materials Research Society 1999 Spring Meeting, April 5-7 at San Francisco, CA.
88. "Advances in GaAs MOSFETs using Ga2O3(Gd2O3) as gate oxide", Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, J. S. Weiner, Y. K. Chen, and A. Y. Cho, Invited talk at Symposium Z "Compound semiconductor surface passivation and novel device processing" of Materials Research Society 1999 Spring Meeting, April 5-7 at San Francisco, CA.
89. "GaN Metal Oxide Semiconductor Field Effect Transistors", F. Ren, S.J. Pearton, C.R. Abernathy (University of Florida), A.G. Baca, P. Chang, R.J. Shul (Sandia National Labs), S.N.G. Chu, M. Hong (Bell Labs), J.R. Lothian (Multiplex Inc.), and M.J. Schurman (EMCORE), 195th The Electrochemical Society Meeting - Seattle, Washington, May 2-6, 1999. State-of-the-Art Program on Compound Semiconductors XXX.
90. "Ga2O3(Gd2O3) - a Novel Oxide for GaAs MOSFET and Beyond", M. Hong, National Institute of Standards and Technology, U. S. Department of Commerce, Gaithersburg, MD, June 11, 1999.
91. "GaAs MOSFET", M. Hong, Joint meeting of TriQuint Semiconductor and Microelectronic Group of Lucent Technologies, Richardson, TX, June 15, 1999.
92. "GaN MOSFETs", with F. Ren et al, The 5th IUMRS International Conference on Advanced Materials, Beijing, China, June 13-18, 1999.
93. "Dielectric passivation/Oxides on Compound Semiconductors", F. Ren, M. Hong, S. J. Pearton, C. R. Abernathy, G. Dang, and J. R. Lothian, 1999 American Vacuum Society Fall Meeting at Seattle, WA, Oct. 25-29, 1999.
94. "Novel GaN-based electronic devices for high power switching and high temperature applications", with X.-A. Cao (Univ. Floirda) et al, 196th The Electrochemical Society 1999 Joint International Meeting, Honolulu, Hawaii, October 17-22, 1999. The invited talk was given at the G1 session of III-V Nitride Materials and Devices.
95. "Dielectric passivation/Oxides on Compound Semiconductors", F. Ren, M. Hong, S. J. Pearton, C. R. Abernathy, and J. R. Lothian, 1999 American Vacuum Society Fall Meeting at Seattle, WA, Oct. 25-29, 1999.
96. "Neutron Scattering on Magnetic Thin Films: Pushing the Limits", A. Schreyer, T. Schmitte, R. Siebrecht, H. Zabel, S. H. Lee, R. W. Erwin, J. Kwo, M. Hong, and C. F. Majkrzak, 44th Annual Conf. on Magnetism and Magnetic Materials, San Jose, 1999, invited paper and was published in JMMM
97. "GaAs MOSFET", M. Hong, Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Nov. 25, 1999.
98. "GaAs MOSFET", M. Hong, Department of Physics, National Cheng-Kung University, Tainan, Taiwan, Nov. 26, 1999.
99. "GaAs MOSFET - Achievements and Challenges", M. Hong, Department of Physics, Chung Yuan Christian University, Chung Li, Taiwan, March 1, 2000.
100. "GaAs MOSFET - Achievements and Challenges", M. Hong, Department of Electrical Engineering, National Central University, Chung Li, Taiwan, March 3, 2000.
101. "Rare earth oxides for GaAs MOSFETs and beyond", M. Hong, Joint NJIT-Rutgers (Newark) Applied Physics Program Colloquium (also jointly with Electrical and Computer Engineering Department), New Jersey Institute of Technology (NJIT), March 10, 2000.
102. "New gate dielectric oxides for GaAs and other semiconductors", M. Hong, American Physical Society, 2000 March Meeting , Minneapolis, MN, March 20-24, 2000.
103. "Low interfacial density of states in Ga2O3(Gd2O3)/GaN and SiO2/GaN diodes", M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, J. I. Chyi, and T. S. Lay, Materials Res. Soc. Spring Meeting, San Francisco, California, April 24-28, 2000.
104. "Ga2O3(Gd2O3)/GaN and SiO2/GaN MOS diodes and MOSFETs", M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J. N. Baillargeon, S. N. G. Chu, J. P. Mannaerts, A. Y. Cho, F. Ren, and J. I. Chyi, the 197th Meeting of the Electrochemical Society, Toronto, Ontario, Canada, May 14-18, 2000.
105. "GaAs MOSFET - Achievements and Challenges", M. Hong, J. N. Baillargeon, J. Kwo, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, Y. C. Wang, and F. Ren, the 197th Meeting of the Electrochemical Society, Toronto, Ontario, Canada, May 14-18, 2000.
106. "GaAs MOSFET - Achievements and Challenges", M. Hong, National Sun Yat-Sen University, Kaohsiung, Taiwan, June 1, 2000.
107. "Recent research progress on GaN MOS diodes and MOSFETs", M. Hong, National Sun Yat-Sen University, Kaohsiung, Taiwan, June 2, 2000.
108. "Recent research progress on GaN MOS diodes and MOSFETs", M. Hong, Chung Yuan Christian University, Chung-Li, Taiwan, June 6, 2000.
109. "New gate dielectrics of Gd2O3 and Y2O3 films for Si", J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, T. S. Lay, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, 42nd Electronic Materials Conference, University of Denver, Denver, Colorado, June 21-23, 2000.
110. "GaAs MOSFET - Material Physics and Devices", M. Hong, and J. Kwo, A. R. Kortan, and J. P. Mannaerts, the 8th Asian Pacific Physics Conference, Institute of Physics, Academia Sinica, Taipei, Taiwan, August 7-10, 2000.
111. "III-V MOSFET Using Ga2O3/Gd2O3 as The Gate Oxide", F. Ren, M. Hong, Y. C. Wang, J. Kwo, J. P. Mannaerts, C. R. Abernathy, and S. J. Pearton, 2000 Topical Workshop on Heterostructure Microelectronics (TWHM'00), Kyoto Research Park, Kyoto, Japan, August 20-23, 2000.
112. "A Comparison of Gallium Gadolinium Oxide and Gadolinium Oxide for use as Dielectrics in GaN MOSFET", B. P. Gila, K. N. Lee, W. Johnson, F. Ren, C. R. Abernathy, S. J. Pearton, M. Hong, J. Kwo, J. P. Mannaerts and K. A. Anselm, the IEEE/Cornell Conference on Advanced Concepts in High Performance Devices, Cornell University, Ithaca, New York, August 7-10, 2000.
113. "GaAs MOSFET", M. Hong, Department of Electronic Engineering, Chung Yuan Christian University, Chung Li, Taiwan, September, 2000.
114."Rare Earth Oxides and their applications to the advanced electronic devices", M. Hong, College of Engineering, Chung Yuan Christian University, Chung Li, Taiwan, March 19, 2001.
115. "Advances and Opportunities of High k Dielectrics for Compound Semiconductors and Si", M. Hong, Department of Physics and Center for Condensed Matter Science, National Taiwan University, Taipei, Taiwan, December 10, 2001.
116. "Advances and Opportunities of High k Dielectrics for Compound Semiconductors and Si", M. Hong and J. Kwo, Plenary talk, 2001 Electron Devices and Materials Symposia, National Sun Yat-Sen University, Kaohsiung, Taiwan, Dec. 12-15, 2001.
117. "The quest for the III-V MOSFET", M. Hong, Department of Materials Science and Engineering, the Johns Hopkins University, Maryland, May 9, 2002.
118. "GaN/ Gd2O3/GaN single crystal heterostructures", M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, and G. Dabbagh, A. R. Kortan, H. M. Ng, A. Y. Cho, and K. A. Anselm, C. M. Lee, and J. I. Chyi, invited talk at the "wide bandgap semiconductors for photonic and electronic devices and sensors" of the 201st Meeting of the Electrochemical Society, Philadelphia, PA, May 12-17, 2002.
119. "The quest for the III-V MOSFET", M. Hong, Department of Materials Science and Engineering, National TsingHua University, Hsin-Chu, Taiwan, September 26, 2002.
120. "The quest for the III-V MOSFET", M. Hong, Academia Sinica, Taipei, Taiwan, October 1, 2002.
121. "Recent Advances in High k Gate Dielectrics for Si and III-V Semiconductors", J. Kwo and M. Hong, MRS Fall Meeting, Dec 2-6, 2002, Boston, MA.
122. "The quest for III-V MOSFET", M. Hong, PRPC Anunal Meeting, Tien Lai, Taipei, Oct. 20, 2003.
123. "Interfaces of oxides with semiconductors - their science and impacts on next generation electronic devices", M. Hong, The Annual Taiwan Physics Society Meeting, Tsing Hua University, Hsin Chu, Taiwan, Feb. 9-11, 2004.
124. "Nano-interfaces of wide bandgap semiconductors with novel oxides - their science and impacts on next generation electronic devices", M. Hong, The Joint US Air Force/Taiwan Workshop on Nano-Technology, Maui, Hawaii, USA, Feb. 19-20, 2004.
125. "The quest for the compound semiconductor MOSFET - Technology beyond Si/SiO2 MOS", Department of Electrical Engineering, National Central University, March 10, 2004.
126. "The quest for the compound semiconductor MOSFET - Technology beyond Si/SiO2 MOS", Combined Colloquium for the Inst. Electronics and Inst. Opto-Electronics, College of Communication and Electrical Engineering, National Tsing Hua University, March 12, 2004.
127. "The quest for the compound semiconductor MOSFET - Technology beyond Si/SiO2 MOS", in "奈米材料與技術研討會", 產學研合作聯盟, College of Engineering, National Tsing Hua University, March 27, 2004.
128. "The Quest for the Compound Semiconductor MOSFET - Technology beyond Si/SiO2 MOS", Plenary talk at MBE Taiwan 2004, National Sun Yat-Sen University, Kaohsiung, Taiwan, April 29-30, 2004.
129. "Tailoring Oxide-Semiconductor Interfaces - an enabling sub-nano approach for new science and advanced devices", Taiwan International Conference on Nano Science and Technology (TICON 2004), National Tsing Hua University, Hsin Chu, Taiwan, June 30 -July 3, 2004.
130. "奈米電子與奈米光電材料", 第十五屆材料科技研習營, National Tsing Hua University, Hsin Chu, Taiwan, July 4-9, 2004.
131. "奈米電子與奈米光電材料", 2004大專奈米材料研習營, National Tsing Hua University, Hsin Chu, Taiwan, August 18-20, 2004.
132. "Determination of Interface Strain with X-Ray Bragg-Surface Diffraction", W.-C. Sun, H.-C. Chang, B.-K. Wu, Y.-R. Chen, C.-H. Chu, C.-W. Cheng, W.-S. Sun, H.-H. Wu, M.-S. Chiu, Y.-C. Shen, Y.-R. Lee, M. Hong, Yu. P. Stetsko, M.-T. Tang, and S.-L. Chang, APAM 7th Seminar on "Functional Materials", Asian-Pacific Academy of Materials, Ningbo (2004) (Plenary talk).
133. "Tailoring Oxide-Semiconductor Interfaces - an enabling sub-nano approach for new science and advanced devices", Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, Taiwan, September 14, 2004.
134. "Tailoring Oxide-Semiconductor Interfaces - an enabling sub-nano approach for new science and advanced devices", Department of Electrical Engineering, Institute of Microelectronics, and Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan, October 8, 2004.
135. "Tailoring Oxide-Semiconductor Interfaces - an enabling sub-nano approach for new science and advanced devices", Department and Institute of Electronic Engineering, National Chiao Tung University, Hsin Chu, Taiwan, October 11, 2004.
136. "The Quest for the Compound Semiconductor MOS - Beyond SiO2/Si Technology", "奈米科技論壇", Department of Materials Science and Engineering, and Center of Nano-science and technology, National Dong Hua University, Hua Lien, April 22, 2005.
137. "國立清華大學性別平等教育委員會: 第七界性別平等教育座談主題: "科技表現，女不如男? -沒有了太太Mileva，還有愛因斯坦嗎？從哈佛校長Summers言論談起"主持人：通識教育中心謝小芩教授 與談人：物理系郭瑞年教授 材料系黃金花教授 材料系洪銘輝教授 電機系張 翔教授 時間：五月二十五日(三)晚上6：30，地點：教育館311視聽教室
138. "Advanced High k Dielectrics for Nano-Electronics - Science and Technologies", M. Hong, 台灣聯合大學系統 奈米科技研究中心 奈米科技研發成果發表會暨清大奈米及製程共用設備?明會, Center for Nano-Science and Technology, University System of Taiwan, Hsin Chu, Taiwan, May 25, 2005.
139. "Tailoring Oxide-Semiconductor Interfaces - an enabling sub-nano approach for new science and advanced devices", M. Hong, Second Joint Taiwanese-Swiss Workshop on "Nanotechnology: towards novel materials" Academia Sinica, Taipei and Bellevista Hotel, Hualien, June 20-25, 2005.
140. "奈米材料", 第十六屆材料科技研習營, National Tsing Hua University, Hsin Chu, Taiwan, July 4-9, 2005.
141. "Advances in High k Gate Oxides for Si and Compound Semiconductor Nanoelectronics", J. R. Kwo and M. Hong, International Conference on Bio-Nano-Information Fusion, Marina del Rey, CA, USA, July 20-22, 2005.
142. "Tailoring Oxide-Semiconductor Interfaces - an enabling sub-nano approach for new science and advanced devices", the 23rd International Physics Congress, Turkish Physical Society, Mugla University, Mugla, Turkey, September 13-16, 2005.
143. "Nano-interfaces of wide bandgap semiconductors with novel oxides - their science and impacts on next-generation electronic devices", M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.
144. "先進奈米磊晶", Dept. Materials Science and Engineering, National Tsing Hua University, 09/30, 2005.
145. "Advanced High k Dielectrics for Nano-Electronics - Science and Technologies", M. Hong and J. Kwo, The Electrochemical Society 208th Meeting - Westin Bonaventure Los Angeles Hotel, Los Angeles, California, October 16-21, 2005.
146. "Advanced high k dielectrics for III-V semiconductors", CISX Auditorium, Department of Electrical Engineering, Stanford University, Stanford, California, December 1, 2005.
147. "Advanced high k dielectrics for III-V semiconductors", Intel, Hillsboro, Oregon, December 2nd , 2005.
148. Panelist on III-V Device Technology at New Channel Materials for Future MOSFET Technology Workshop, IEEE/IEDM, Washington DC, December 4th, 2005.
149. "Recent Advances in High 岂 Dielectrics for Nano-electronics", with J. Kwo, Center for Nano-Science and Technology, University System of Taiwan, Hsin Chu, December 8, 2005. 理論與實驗奈米論壇~十二月份(主辦單位：台灣聯合大學 奈米科技研究中心; 國科會 理論科學研究中心)
150. "Advanced high k dielectrics for III-V compound semiconductors", Laboratory for Photonics and Nanostructures (LPN), Centre National De La Recherche Scientifique (CNRS), Marcoussis, France, December 15th , 2005
151. "Recent breakthroughs in the quest for compound semiconductor MOSFET's", Annual Meeting, Republic of China Physical Society (中華民國物理學會), January 15, 2006, Taipei, Taiwan.
152. "III-V's as New Channel Materials for Future MOSFET Technology: the scientific aspects", 應科中心,中央研究院Academia Sinica, February 6, 2006.
153. "Technology beyond silicon-MOS", 95學年度高中教師奈米/顯示材料研習營, Department of Materials Science and Engineering, National Tsing Hua University, March 4-5, 2006.
154. "Physics and Materials of III-V MOS - a technology beyond the present Si/SiO2 MOS", Department of Physics, National Cheng Kung University, March 24, 2006.
155. "High k dielectrics for GaN with low interfacial density of states and low leakage currents", Electronics and Photonics Laboratories, ITRI, April 7, 2006.
156. "The quest for the III-V MOSFET", Minghwei Hong, MBE Taiwan 2006 & High-k Materials Workshop, June 1-3,2006.
157. "Structure and composition of epitaxial oxide films on silicon", Torgny Gustafsson, Eric Garfunkel, Lyudmila Goncharova, Mateus Dalponte, Tian Feng, Minghwei Hong, J. Raynien Kwo, Darrell G. Schlom and Venu Vaithyanathan, MBE Taiwan 2006 & High-k Materials Workshop, June 1-3,2006.
158. "III-V MOSFET", MBE Taiwan, June 1-3, 2006.
159. "Nano-interfaces of wide bandgap semiconductors with novel oxides - their science and impacts on next-generation electronic devices", M. Hong, 2006奈米國家型科技計畫成果發表會, 6/9-10, 2006, 國科會會議中心2樓, Taipei, Taiwan.
160. "Defining New Frontiers in Electronics Devices with High-k dielectrics and interfacial engineering", A分項主持人 洪銘輝教授(清華大學材料系) 國立清華大學奈微中心 「下世代奈米互補式金氧半場效電晶體三年計畫」第一年成果發表會時間：2006年7月6日 (四)地點：國立清華大學資電館地下室B01演講廳
161. "奈米電子與奈米光電", 17th 材料科技研習營, 國立清華大學, July 8, 2006.
162. "Defining New Frontiers in Electronic Devices with High k Dielectrics and Interfacial Engineering", M. Hong, J. R. Kwo, C. H. Hsu, H. Y. Lee, T. B. Wu, M. L. Huang, Y. C. Chang, C. H. Chang, W. C. Lee, T. D. Lin, P. Chang, Y. J. Lee, Z. K. Yang, C. Nieh, C. P. Chen, C. H. Pan, Q. Y. Lee, P. J. Tsai, Y. N. Chiu, and L. K. Chu, The Ninth International Conference on Surface X-Ray and Neutron Scattering (9sxns), Taipei, Taiwan, July 16-20, 2006.
163. "Defining New Frontiers in Electronic Devices with High k Dielectrics and Interfacial Manipulation", M. Hong and J. Kwo, International Symposium on III V MOSFET's, Intel, Plainsboro, Oregon, September 9, 2006.
164. "Defining New Frontiers in Electronic Devices with High k Dielectrics and Interfacial Engineering", Department of Materials Science and Engineering, National Taiwan University, Taipei, September 18, 2006.
165. "Defining New Frontiers in Electronic Devices with High k Dielectrics and Interfacial Engineering", 第一屆國立交通大學奈米科技中心成果發表會暨攝影競賽Oct. 13, 2006
166. "III-V MOSFET", the 210th mtg. of the Electrochemical Society, Cancun, Mexico, Oct. 29 - Nov. 3, 2006.
167. "The quest for III-V MOSFET", The 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY (IWDTF-06), Kawasaki City Industrial Promotion Hall, Kanagawa, Japan, November 8th to 10th, 2006.
168. "Magnetic Properties of Epitaxial Fe3Si/GaAs Heterostructures and Cobalt Doped HfO2 Films Toward the Realization of Spintronics", J. Kwo, and M. Hong, Nano structured materials and magnetics, National Taiwan University, Taipei, November, 2006.
169. "Defining New Frontiers in Electronic Devices with High k Dielectrics and Interfacial Engineering", Optoelectronics Taiwan OPT 2006, 台灣光電技術研討會December 15-16, 2006, National Tsing Hua University, Hsin Chu, Taiwan.
170. "Defining New Frontiers in Nano-Electronics using High k Dielectrics and Interfacial Engineering", 積彭講座, 核能研究所, December 16, 2006.
171. "Defining New Frontiers in Nano-Electronics using High k Dielectrics and Interfacial Engineering", TSMC, February 12, 2007.
172. "Atomic-layer-deposited (ALD) Al2O3 and HfO2 on III-V compound semiconductors: Surface passivation and Energy band parameters", M. L. Huang, K. Y. Lee, Y. C. Chang, Y. J. Lee, P. Chang, C. H. Chang, T. B. Wu, J. Kwo and M. Hong, MRS Spring Meeting, April 9-13,2007.
173. "Defining New Frontiers in Nano-Electronics using High k Dielectrics and Interfacial Tailoring", MBE Taiwan 2007, May 21-22, National Sun Yat-sen University, Kaohsiung, Taiwan.
174. "Nano-interfaces of wide bandgap semiconductors with novel oxides- their science and impacts on next-generation electronic devices新穎氧化物與寬能帶半導體奈米介面之科學探討及其對下世代電子元件的影響", 2007 奈米國家型科技計畫成果發表會台灣大學綜合體育館, June 15-16, 2007.
175. "下世代奈米互補式金氧半場效電晶體", 18th 材料科技研習營, 國立清華大學, July 9, 2008.
176. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", Department of Materials Science and Engineering, U. C. Berkeley, September 27th 2007.
177. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", Stanford University, September 28th 2007.
178. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", Intel Corporation, September 28th 2007.
179. "High k dielectrics on III-V compound semiconductors - technology beyond Si CMOS", TIGP中央研究院奈米學程 (Office of Nano Science and Technology Program), September 19, 2007.
180. "High k dielectrics on high mobility semiconductors for technologies beyond Si CMOS", 交通大學電子工程研究所, Oct. 12, 2007.
181. "Nano-electronics on III-V semiconductor", 交通大學奈米科技導論, Oct. 18, 2007.
182. "Defining New Frontiers in Nano-Electronics with high-k dielectrics and interfacial engineering" 45-22奈米電子研發聯盟成立開幕典禮 暨 清華大學奈材中心「下世代奈米互補式金氧半場效電晶體三年計畫」學界科專第二年度成果發表會，清華大學資電館演講廳Oct. 24, 2007.
183. "Urgent materials issues for CMOS 32 nm technology node and beyond", 材料科技論壇, Department of Materials Science and Engineering, October 26, 2007.
184. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS"中研院物理所 November 7, 2007.
185. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", 國立交通大學奈米科技中心第二屆成果發表會暨攝影競賽 Dec. 21, 2007
186. "Achieving excellence in research and education in Taiwan's graduate schools - challenges and solutions", Forum on Graduate Education in East Asia --- Challenges and Innovations (東亞「研究生教育」論壇：挑戰與創新) National Taiwan Normal University Dec. 21, 2007.
187. "III-V and Ge nano-electronics for technology beyond Si CMOS", M. Hong and J. Kwo, 2008 International Winter School: Beyond Moore's Law, Howard Beach Resort Kenting, Taiwan, January 7-11, 2008.
188. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", M. Hong and J. Kwo, the 5th Taiwan/U.S. Air Force Nanoscience and Nanotechnology Workshop, Hui-Sun Forest Station, Taiwan, February 10-12, 2008.
189. "III-V and Ge nano-electronics for science and technology beyond Si CMOS", M. Hong and J. Kwo, TSMC, Hsinchu, Taiwan, March 7, 2008.
190. "淺談頂尖高科技發展,兼論從考試生變為研究者", 國立屏東高中, May 14, 2008.
191. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", Departments of Electrical Engineering and Materials Science, UCLA, June 3, 2008.
192. "Research advances on III-V and Ge nano-electronics", J. Kwo and M. Hong, MBE Taiwan 2008, National Chiao Tung University, June 6-7, 2008.
193. "Research on III-V and Ge nano-electronics beyond Si CMOS; 超越矽互補式金氧半場效電晶體在三五族與鍺奈米電子的研究", National Taiwan University Sports Center, 2008 Annual Meeting of National Nanoscience and Nanotechnology Program, June 13-14, 2008. 2008奈米國家型科技計畫成果發表會 and also a session chair.
194. Conference Chair for Nano-week Taiwan台灣奈米週. Invited speakers from US, UK, and Taiwan, including J. M. Hong, Ken Hsieh, Clement Wann, T.P. Ma, J. Kwo, Ken Shih, and Milton Feng
195. "Research advances on III-V and Ge nano-electronics", Materials Research Laboratory, Univ. Calif. Santa Barbara, CA, June 23, 2008.
196. "Nano-electronics research for science and technology beyond Si CMOS", 19th 材料科技研習營, 國立清華大學, July 10, 2008.
197. "Research on III-V and Ge nano-electronics for key technology beyond Si CMOS", M. Hong, J. Kwo, P. Chang, Y. C. Chang, W. H. Chang, C. H. Chiang, H. C. Chiu, L. K. Chu, M. L. Huang, K. Y. Lee, W. C. Lee, Y. J. Lee, and T. D. Lin, NSC (National Science Council of Taiwan) -JST (Japan Science and Technology Agency) Nano Device Workshop, National Taiwan University, Taipei, Taiwan, July 30 - 31, 2008.
198. "MBE+ALD for Si MOS" NSC (National Science Council of Taiwan) -JST (Japan Science and Technology Agency) Nano Device Workshop, National Taiwan University, Taipei, Taiwan, July 30 - 31, 2008.
199. "Research on III-V and Ge Nano-electronics for science and technology beyond Si CMOS", J. Kwo and M. Hong, the 15th International Conference on Molecular Beam Epitaxy (MBE), The Univ. of British Columbia, Aug. 3-8, 2008.
200. "GaGdO and Al2O3 passivated III-V MOSFET" on the workshop on "Germanium and III-V MOS Technology", the 38th European Solid-State Device Research Conference (ESSDERC), Edinburgh International Conference Centre, Edinburgh, Scotland, United Kingdom, Sept. 15-19, 2008.
201. "Research on III-V and Ge nano-electronics for key technology beyond Si CMOS", M. Hong, J. Kwo, M. L. Huang, T. D. Lin, Y. C. Chang, W. C. Lee, P. Chang, and L. K. Chu, The 2nd IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC) 2008, Main Campus (Yoshida Campus) of Kyoto University, Kyoto, Japan, October/20/2008 - October/22.
202. "III-V and Ge nano-electronics for technology beyond Si CMOS - material science and device performance", M. Hong, J. Kwo, P. Chang, W. H. Chang, Y. C. Chang, Y. H. Chang, C. H. Chiang, H. C. Chiu, L. K. Chu, R. L. Chu, M. L. Huang, W. C. Lee, Y. J. Lee, T. D. Lin, and Y. D. Wu, 台灣材料年會, Nov. 21-22, 2008. 2008年中國材料科學學會年會於今年11月21至22日，假國立台北科技大學舉行
203. "Research on III-V and Ge nano-electronics for key technology beyond Si CMOS", M. Hong and J. Kwo, MIT, Dec. 2, 2008.
204. "Fluorite-derivative high 岂 dielectrics on InGaAs for technologies beyond Si CMOS - interfacial properties and high performance devices", M. Hong, J. Kwo, W. C. Lee, and C. H. Hsu, MRS Fall, Dec. 1-5, 2008.
205. "Research on III-V and Ge nano-electronics for science and technology beyond Si CMOS", M. Hong and J. Kwo, IBM, Yorktown Heights, NY, December 5, 2008.
206. "Research on III-V and Ge Nano-Electronics for Science and Technology beyond Si CMOS", M. Hong and J. Kwo, TSMC, Dec. 11, 2008.
207. "Research on III-V and Ge Nano-Electronics for Science and Technology beyond Si CMOS", M. Hong and J. Kwo, Panelist for The workshop on III-V channels for future CMOS (co-hosted by SEMATECH and AIXTRON) December 14, 2008. Renaissance Parc 55 Hotel, 55 Cyril Magnin St, San Francisco, CA [right next to IEDM-Hilton Hotel]
208. "Impacts of Synchrotron Radiation Research on Science and Technology Beyond Si CMOS and Beyond Moore's Law - III-V, Ge MOSFET and Spintronics", M. Hong and J. Kwo, the 1st Science Advisory Committee Meeting jointly held with the 4th TPS Machinery Advisory Committee Meeting, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Jan. 7, 2009.
209. "Beyond Si CMOS and Beyond Moore's using Nano-probe Beamline in Taiwan Photon Source (TPS)", M. Hong, S. L. Chang, J. Kwo, C. H. Lee, A. C. M. Yang, and M. Tang, the 1st Science Advisory Committee Meeting jointly held with the 4th TPS Machinery Advisory Committee Meeting, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Jan. 8, 2009.
210. "Research on High κ Dielectrics & III-V MOSFET beyond Si CMOS", J. Raynien Kwo and Minghwei Hong, Joint American Vacuum Society (AVS)/Taiwan Annual Physical Society Meeting on Beyond Si CMOS, NCHUE, Changhua, Taiwan, Jan.20-21, 2009.
211. "Nano-electronics of high k dielectrics on high mobility channel semiconductors for key technologies beyond Si CMOS", M. Hong, J. Kwo, M. L. Huang, T. D. Lin, Y. C. Chang, W. C. Lee, P. Chang, Y. J. Lee, H. C. Chiu, and L. K. Chu, April 20-21, 2009, the 6th Taiwan/U.S. Air Force Nanoscience and Nanotechnology Workshop, Marriott Hotel, San Francisco, CA.
212. "Interfacial tailoring of high k dielectrics on high mobility channel semiconductors for science and technologies beyond Si CMOS", Minghwei Hong and J. Raynien Kwo, Air Force Research Laboratory (Wright-Patterson Air Force Base (WPAFB)), Dayton, Ohio, April 23, 2009.
213. "Nano-electronics of high k dielectrics on InGaAs for key technologies beyond Si CMOS", T. D. Lin, P. Chang, H. C. Chiu, Y. C. Chang, C. A. Lin, W. H. Chang, Y. J. Lee, Y. H. Chang, M. L. Huang, J. Kwo, and M. Hong, Conference Proceedings (invited talk), InP and related Material Conference (IPRM), Newport Beach, California, May 10-14, 2009.
214. "Interfacial tailoring of high k dielectrics on high mobility channel semiconductors for science and technologies beyond Si CMOS", Minghwei Hong and J. Raynien Kwo, IMEC, Leuven, Belgium, May 14, 2009.
215. "Advances on III-V MOSFET for Science and Technology beyond Si CMOS", J. Kwo, T. D. Lin, M. L. Huang, P. Chang, Y. J. Lee, and M. Hong, ECS Transactions, invited talk at the 215th The Electrochemical Society Meeting, San Francisco, California, May 24 -29, 2009.
216. "InGaAs MOSCAPS and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3(Gd2O3) as a gate dielectric", T. D. Lin, H. C. Chiu, P. Chang, W. C. Lee, T. H. Chiang, J. Kwo, W. Tsai, and M. Hong, ECS Transactions, invited talk at the 215th The Electrochemical Society Meeting, San Francisco, California, May 24 -29, 2009.
217. "Research on III-V and Ge nano-electronics beyond Si CMOS; 超越矽互補式金氧半場效電晶體在三五族與鍺奈米電子的研究", 行政院國家科學委員會二樓會議室, 2009 Annual Meeting of National Nanoscience and Nanotechnology Program, June 5-6, 2009. 2009奈米國家型科技計畫成果發表會.
218. "Nano-electronics research for science and technology beyond Si CMOS", 20th 材料科技研習營, 國立清華大學, July 7, 2009.
219. "Research Advances on InGaAs and Ge MOSFETs beyond Si CMOS", T. D. Lin, L. K. Chu, P. Chang, H. C. Chiu, C. A. Lin, W. H. Chang, J. Kwo, and M. Hong, NSC (National Science Council of Taiwan) -JST (Japan Science and Technology Agency) Nano Device Workshop, NDL, Hsinchu, Taiwan, July 23-24, 2009.
220. "Advances and Challenges of Nano Electronics Beyond Si CMOS" J. Kwo and M. Hong, The 6th Joint Meeting of Chinese Physicists Worldwide [OCPA6], Lanzhou University, China, August 3-7, 2009.
221. "High k and high carrier mobility channel MOSFET by MBE", RIBER, France, Sept. 18, 2009.
222. "Realization of Ge and III-V MOSFET beyond Si CMOS", J. Raynien Kwo and M. Hong, Forum on綠色節能的奈米電子, Taiwan Nano (2009 台灣國際奈米週) 奈米科技產學研究合作推動論壇--- 奈米技術現況與未來趨勢系列,會議時間：2009/10/7-10/9, 台北市世界貿易中心一館B區
223. "Direct observation of interfacial structure in epitaxial Gd2O3 on GaAs (100) by STM", Y. P. Chiu, M. C. Shih, J. Y. Shen, B. J. Hwang, M. L. Huang, W. C. Lee, T. H. Chiang, M. Hong, and J. Kwo, Forum on綠色節能的奈米電子, Taiwan Nano (2009 台灣國際奈米週) 奈米科技產學研究合作推動論壇--- 奈米技術現況與未來趨勢系列,會議時間：2009/10/7-10/9, 台北市世界貿易中心一館B區
224. "Atomic layer deposited high k's on InGaAs: Surface passivation, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, P. Chang, M. Hong, and J. Kwo, Forum on綠色節能的奈米電子, Taiwan Nano (2009 台灣國際奈米週) 奈米科技產學研究合作推動論壇--- 奈米技術現況與未來趨勢系列,會議時間：2009/10/7-10/9, 台北市世界貿易中心一館B區
225. "Enhancement-mode Inversion-channel and Depletion-mode GaN MOSFETs using Atomic-layer deposited Al2O3 and HfO2 as Gate Dielectrics", Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo, J. M. Hong, C. C. Tsai, and M. Hong, Materials Research Society Fall Meeting, Boston, USA, Nov. 30 - Dec. 4, 2009.
226. "Research Advances on III-V and Ge MOSFETs beyond Si CMOS", J. Kwo and M. Hong, Materials Research Society Fall Meeting, Boston, USA, Nov. 30 - Dec. 4, 2009.
227. "Nano-electronics of III-V and Ge MOSFETs beyond Si CMOS", Nagasaki and National Tsing Hua University Joint Seminar on Nano Material Sciences, Chemistry Building, National Tsing Hua University, Dec. 9, 2009
228. "Tailoring High k's/Exotic Semiconductors Interfaces in Atomic Scale - Leading to Technology beyond Si CMOS and More", Dept. Physics, National Taiwan University, Taipei, Taiwan, Dec. 22, 2009.
229. "Beyond Si CMOS, Beyond Moore's and More - using Nano-probe Beamline in Taiwan Photon Source (TPS)", NSRRC SAC Meeting, Jan. 14, 2010.
230. "Tailoring high k's/III-V compound semiconductors and Ge interfaces - Leading to science and technology beyond Si CMOS", Minghwei Hong and J. Raynien Kwo, The Taiwan-Argonne Workshop on the Nano-Structured Materials, National Cheng Kung University, Tainan, Taiwan, February 1-2, 2010.
231. "Nano-electronics beyond Si CMOS", M. Hong and J. Kwo, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China, March 17, 2010.
232. "Nano-electronics of high k dielectrics on InGaAs and Ge for key technologies beyond Si CMOS", T. D. Lin, M. L. Huang, L. K. Chu, P. Chang, C. A. Lin, W. H. Chang, R. L. Chu, Y. H. Chang, J. Kwo, and M. Hong, China Semiconductor Technology International Conference (CSTIC), Shanghai, China, March 18-19, 2010.
233. "Nano-electronics of high k汹dielectrics on exotic semiconductors for science and technology beyond Si CMOS", M. Hong and J. Kwo, Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, Tsukuba, Ibaraki, Japan, March 24, 2010. (also attending the 1st Asia-Europe Physics Summit (ASEPS) as a convener, held at Tsukuba, March 23-26, 2010)
234. "Nano-electronics of high k dielectrics on InGaAs and Ge Research for science and technology beyond Si CMOS", M. Hong and J. Kwo, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan, March 25, 2010. (also attending the 1st Asia-Europe Physics Summit (ASEPS) as a convener, held at Tsukuba, March 23-26, 2010)
235. "Tailoring High k 's/Exotic Semiconductors Interfaces in Atomic Scale - Leading to Technology beyond Si CMOS and More", M. Hong, J. Kwo, T. D. Lin, W. C. Lee, P. Chang, Y. H. Chang, M. L. Huang, and L. K. Chu, 7th Taiwan/U.S. Air Force Nanoscience Workshop, Chiao Hsi, Yi Lan, Taiwan, April 1-2, 2010.
236. "Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS", W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, L. K. Chu, P. Chang, C. A. Lin, W. H. Chang, R. L. Chu, Y. H. Chang, J. Kwo, and M. Hong, 3rd Hsinchu-Tsukuba Workshop on Nano and Bio Materials, National Tsing Hua University, Hsinchu, April 2-3, 2010.
237. "Nano-electronics of high 岂 dielectrics on exotic semiconductors for science and technology beyond Si CMOS", W. C. Lee, P. Chang, Y. J. Lee, M. L. Huang, T. D. Lin, L. K. Chu, Y. C. Chang, H. C. Chiu, Y. H. Chang, C. A. Lin, W. H. Chang, R. L. Chu, T. H. Chiang, Y. D. Wu, J. Kwo, and M. Hong, VLSI-TSA, Hsinchu, April 26-28, 2010.
238. "III-V MOSFET for Nano-electronics Beyond Si CMOS", J. Kwo and M. Hong, 4th International Workshop on High k Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan, May 25-27, 2010.
239. "Interfacial electronic structures of Ga2O3(Gd2O3) on n-Ge studied by synchrotron radiation photoemission", T.-W. Pi, Y. J. Wang, M. L. Huang, L. K. Chu, J. Kwo, and M. Hong, 4th International Workshop on High k Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan, May 25-27, 2010.
240. "InGaAs and Ge MOSFETs with high k dielectrics", M. Hong and J. Kwo, E-MRS, Strasbourg, France, June 7-11, 2010.
241. "Nano science and technology in Tsing Hua", M. Hong, 2010 Taiwan/Canada Nanotechnology Bilateral Collaborative Research Roundtable Meeting, First Meeting Rm., 5F., Institute of Physics, Academia Sinica, 20 July, 2010 . (中研院物理所5樓第一會議室舉行「台加奈米科技雙邊合作研究」圓桌會議)
242. "Nano-electronics and nano-magnetic", M. Hong, Long-term Impacts and Future Opportunities for Nanotechnology, US-Japan-Korea-Taiwan Workshop, Tsukuba, Japan, July 26-27, 2010 (sponsored by JST Japan, NSF US, MEST Korea and NSC Taiwan)
243. "MBE - enabling technology beyond Si CMOS", P. Chang, W. C. Lee, T. D. Lin, J. Kwo, C. H. Hsu, M. Hong, the 16th International Conference on Molecular Beam Epitaxy (MBE), Berlin, Germany, August 22-27, 2010.
244. Intl Conf MBE oxide Session Chair 8/26 11 am, Berlin, Germany
245. "Nano-electronics beyond Si CMOS", Y. C. Chang, M. Hong and J. Kwo, Plenary talk at the 4th AEARU Advanced Materials Science Workshop "Artificial and Self-Organized Nanostructure Sciences and Nano-Technologies for the Sustainable World", August 29th-September 3rd, 2010, Tsukuba, Japan. AEARU stands for The Association of East Asian Research Universities.
246. "InGaAs and Ge MOSFETs with high k dielectrics", M. Hong, Advanced CMOS Technologies, SEMATECH Symposium Taiwan, The Ambassador Hotel - Hsinchu, Taiwan, September 7, 2010.
247. "Nano-electronics of high汹k汹dielectrics on InGaAs and Ge for science and technology beyond Si CMOS", M. Hong, J. Kwo, and C. O. Chui, International Symposium on Materials for Enabling Nano-devices, University of California, Los Angeles, September 8-10, 2010.
248. "Nano-scale Materials/Devices for Green Exa-scale Computing", M. Hong and J. Kwo, keynote speech for the joint workshop on energy and nano-technology between Hsinchu and Beijing Tsing Hua Universities, Oct. 11-12, 2010, Hsinchu, Taiwan. (2010年兩岸清華大學能源與奈米科技研討會)
249. "Nano-scale Materials and Devices for Green Exa-scale Computing", M. Hong, J. Kwo, J. C. Guo, C. W. Liu, J. I. Chyi, C. H. Hsu, and T. W. Pi, the NSRRC workshop, X-ray Investigation toward Nano-World, Hsinchu, Taiwan, Oct. 20-21, 2010.
250. "High k dielectrics on InGaAs and Ge for science and technology beyond Si CMOS (InGaAs and Ge MOSFETs with a common high k gate dielectric)", W. C. Lee, T. D. Lin, L. K. Chu, P. Chang, Y. C. Chang, R. L. Chu, H. C. Chiu, C. A. Lin, W. H. Chang, T. H. Chiang, Y. J. Lee, M. Hong, and J. Kwo, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), Shanghai, China, Nov. 1 -4, 2010. (Print ISBN 978-1-4244-5797-7; pp. 1180-1183)
251. "Beyond Si CMOS and Beyond Moore's - Nano-Science and Nano- Technology in High-岂/High Mobility Semiconductor MOS Devices", M. L. Huang, W. C. Lee, C. A. Lin, J. Kwo (郭瑞年), T. D. Lin, P. Chang, L. K. Chu, Y. H. Chang, H. C. Chiu, W. H. Chang, Y. J. Lee, R. L. Chu, J. Y. Shen, and M. Hong (洪銘輝), 「台灣奈米科技發展與展望」座談會, National Taiwan University/Institute of atomic and molecular science, Academia Sinica, Dec. 3, 2010.
252. "III-V workshop on the remaining key "research", "development" and "manufacturing" challenges for III-V MOSFETs [Technology node of 11nm and below] and alternative options for improved performance at lower power and provide Vcc scaling opportunity [Technology node of 11nm and below]", SEMATECH Symposium (prior to IEDM), Dec. 5, 2010.
253. "High k 's/high mobility semiconductors for post Si CMOS nano-electronics", National Chiao Tung University, EE Solid-state Electronics Seminar (交通大學電子所固態組專題演講) Dec. 13, 2010.
254. "High k's/high carrier mobility semiconductors - Pushing the material limit and novelty for post Si CMOS nano-electronics", M. Hong, M. L. Huang, W. C. Lee, T. D. Lin, Y. C. Chang, H. C. Chiu, P. Chang, Y. H. Chang, L. K. Chu, T. W. Pi, and J. Kwo, 8th Taiwan-Air Force Nano-Science workshop, Seattle, WA, April 5-6, 2011.
255. "Tailoring high k's/high mobility semiconductor interface for advanced nano-electronics", Argonne National Laboratory, Illinois, USA, April 7, 2011.
256. "InGaAs, Ge, and GaN MOSFETs with high k dielectrics for post Si CMOS", M. Hong, Taiwan-WIN (Waterloo Institute of Nanotechnology, Canada) Strategic Workshop on Nanotechnology, April 11-14th, 2011
257. "InGaAs, Ge, and GaN MOSFETs with high k dielectrics", T. D. Lin, H. C. Chiu, Y. C. Chang, Y. H. Chang, P. Chang, L. K. Chu, C. A. Lin, W. H. Chang, M. L. Huang, C. H. Hsu, T. W. Pi, M. Hong, and J. Kwo, 18th Symposium on Nano Device Technology (SNDT 2011), NDL (Nano Device Laboratory), Hsinchu, April 21-22, 2011.
258. "High k's/high carrier mobility semiconductors for post Si CMOS nano-electronics", P. Chang, T. D. Lin, L. K. Chu, H. C. Chiu, Y. H. Chang, M. L. Huang, T. W. Pi, M. Hong, and J. Kwo, Materials Research Society Spring Meeting, San Francisco, CA, April 25-29, 2011.
259. "High k's/high carrier mobility semiconductors - Pushing the material limit and novelty for post Si CMOS nano-electronics toward exascale computing", 奈米科技中心第四屆成果發表會Nano Center, National Chiao Tung University, Hsinchu, Taiwan, May 27, 2011.
260. "Direct determination of flat-band voltage for metal/high k oxide/semiconductor hetero-interfaces by electrical-field-induced second-harmonic generation", C. L. Chang, W. C. Lee, L. K. Chu, M. Hong, J. Kwo, and Y. M. Chang, 5th International Workshop on "High k dielectrics on high carrier mobility semiconductors", National Tsing Hua University, Hsinchu, Taiwan, June 8-10, 2011.
261. "High performance GaN MOSFETs using atomic-layer-deposited high-k oxides as gate dielectrics", Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo, J. M. Hong, C. C. Tsai, and M. Hong, 5th International Workshop on "High k dielectrics on high carrier mobility semiconductors", National Tsing Hua University, Hsinchu, Taiwan, June 8-10, 2011.
262. "High-k Al2O3 on n-GaAs (001) 4x6 surface: A synchrotron-radiation photoemission study", T. W. Pi, M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen K. H. Lee, M. Hong and J. Kwo, and, 5th International Workshop on "High k dielectrics on high carrier mobility semiconductors", National Tsing Hua University, Hsinchu, Taiwan, June 8-10, 2011.
263. "Scientific and technological challenges facing post Si MOS", M. Hong, 5th International Workshop on "High k dielectrics on high carrier mobility semiconductors", National Tsing Hua University, Hsinchu, Taiwan, June 8-10, 2011.
264. "50 years of development of oxides on III-V. Is in situ process the best choice?", M. Hong, 2011 DRC short course "Gate Dielectrics for Advanced Transistors", U. C. Santa Barbara, Sunday, June 19, 2011. (This year's Device Research Conference Short Course addresses the critical topic of gate dielectrics for advanced transistor technologies. An overview of the current state-of-the-art in gate dielectrics for Silicon, III-V and Germanium FET technologies will be provided by leading researchers in the fields. Additionally, simulation of oxide-semiconductor interfaces and appropriate characterization techniques for these interfaces will be reviewed. This course will be taught at the physics and engineering graduate student level, and is appropriate for industry, government and university researchers as well as managers seeking a concise introduction to the field. Course Organizers: Dr. Yanning Sun, IBM and Dr. Daniel Green, ONR)
265. "III-V and Ge MOSFET - enabling technology for post Si CMOS", M. Hong, The 7th Joint Meeting of Chinese Physicists Worldwide (OCPA7) International Conference on Physics Education and Frontier Physics, August 1-5, 2011, Kaohsiung, Taiwan.
266. "III-V and Ge MOSFETs using in-situ MBE/ALD high-k dielectrics", T. D. Lin, J. Kwo, and M. Hong, SEMATECH Symposium, Hsinchu, Taiwan, September 14, 2011.
267. "Research Advances on III-V and Ge MOS/MOSFETs Beyond Si CMOS (Invited)", T. D. Lin, M. L. Huang, Y. C. Chang, W. C. Lee, T. W. Pi, J. Kwo, and M. Hong, AVS (American Vacuum Society) 58th International Symposium and Exhibition, Nashville, Tennessee, USA, October 30 - November 4, 2011.
268. "Realization of III-V nano-electronics - science and technology beyond Si CMOS", M. Hong, Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan, Oct. 26. 2011.
269. "Pushing the material limits in high k dielectrics on high carrier mobility semiconductors. Is in-situ process the best choice?", M. L. Huang, W. C. Lee, T. D. Lin, Y. H. Chang, C. A. Lin, Y. C. Chang, T. W. Pi, J. Kwo, and M. Hong, 42nd IEEE Semiconductor Interface Specialists Conference (SISC 2011), The Key Bridge Marriott Hotel, Arlington, VA, December 1-3, 2011.
270. "Growth mechanism and electronic structures of the nano interface grown by ALD and determined by Synchrotron X-ray nano-probes", Session chaired by M. Hong, 2012 Bilateral NSC (National Science Council)/ANL (Argonne National Laboratory) Workshop on Materials for Energy, Center for Condensed Matter Sciences (CCMS), National Taiwan University, Taipei, Taiwan, [臺大凝態中心 2012 臺美（NSC/ANL）雙邊合作「發展能源之材料研究」研討會], Jan. 12-13, 2012.
271. "Pushing the material limit and physics novelty in high k's/high carrier mobility semiconductors for post Si CMOS", M. Hong, 2012 Bilateral NSC (National Science Council)/ANL (Argonne National Laboratory) Workshop on Materials for Energy, Center for Condensed Matter Sciences (CCMS), National Taiwan University, Taipei, Taiwan, [臺大凝態中心 2012 臺美（NSC/ANL）雙邊合作「發展能源之材料研究」研討會], Jan. 12-13, 2012.
272. "Pushing the material limit and physics novelty in high k's/high carrier mobility semiconductors for post Si CMOS", American Physical Society March Meeting, Boston, MA, February 27 - March 2, 2012.
273. "III-V CMOS - Pushing science and technology extending and beyond Moore's", ASIAA/CCMS/IAMS/NTU-Physics Joint Colloquium, March 20, 2012.
274. "III-V CMOS push - accomplishments and needed physics", M. Hong, T. W. Pi, and Y. P. Chiu, Theory Seminar, Department of Physics, National Taiwan University, March 21, 2012.
275. "III-V CMOS - technology extending and beyond Moore's: accomplishments and challenges", M. L. Huang, W. C. Lee, T. D. Lin, Y. C. Chang, Y. H. Chang, T. W. Pi, Y. P. Chiu, J. I. Chyi, G. J. Brown, J. Kwo, and M. Hong, 9th Taiwan/U.S.Air Force Nanoscience Workshop, Kenting, April 17-20, 2012.
276. "III-V CMOS - technology to extend Moore's using molecular beam epitaxy", M. Hong, T. D. Lin, W. C. Lee, T. W. Pi, and J. Kwo, 2012 MBE-Taiwan, National Cheng Kung University, Tainan, Taiwan, May 31, 2012.
277. "Realization of High k Gate Dielectrics on High Carrier Mobility Semiconductors Beyond Si CMOS", J. Kwo, M. Hong, W. W. Pai, Y. P. Chiu, T. W. Pi, and C. Merckling, the 17th International Conference on Molecular Beam Epitaxy (ICMBE), Nara, Japan, September 23 to 28, 2012.
278. "Realization of high performance InGaAs and Ge MOSFETs using MBE/ALD high-κ dielectrics", T. D. Lin, M. Hong, and J. Kwo, T. J. Watson Research Center IBM, October 2, 2012.
279. "Electrical defect analysis of InGaAs and Ge MOS devices passivated by ALD and MBE High-k dielectrics", C. A. Lin, M. Hong, and J. Kwo, T. J. Watson Research Center IBM, October 2, 2012.
280. "Overview of III-V Activities at National Taiwan University", M. Hong and J. Kwo, T. J. Watson Research Center IBM, October 2, 2012
281. "Electrical Analysis of InxGa1-xAs MOS devices passivated by MBE and ALD High-k Dielectrics", C. A. Lin, M. Hong, and J. Kwo, 9th International Symposium on Advanced Gate Stack Technology, The Saratoga Hilton, Saratoga Springs, New York, USA, October 3-4, 2012.
282. "In-situ Deposited High κ Dielectrics for High Performance InGaAs MOS", T. D. Lin, M. Hong, and J. Kwo, 9th International Symposium on Advanced Gate Stack Technology, The Saratoga Hilton, Saratoga Springs, New York, USA, October 3-4, 2012.
283. "Atomic layer deposition and molecular beam epitaxy - Pushing the material limit for CMOS scaling", M. Hong, J. Kwo, T. W. Pi, C. H. Hsu, W. W. Pai, and Y. P. Chiu, (plenary talk) The 1st International Conference on ALD Applications and the 2nd China ALD Conference, Fudan University, Shanghai, China, October 15-16, 2012.
284. "Native-oxides free high-k interfaces: A synchrotron radiation photoemission study", T.-W. Pi, T. D. Lin, H. Y. Lin, Y. T. Liu, Y. C. Chang, Y. H. Chang, G. K. Wertheim, J. Kwo, and M. Hong, (invited talk) The 1st International Conference on ALD Applications and the 2nd China ALD Conference, Fudan University, Shanghai, China, October 15-16, 2012.
285. "50 years of research/development of oxides on InGaAs leading to ultimate CMOS", M. Hong, Institute of Physics, Academia Sinica, Taipei, November 27, 2012.
286. "Physics and Chemistry of the High k/InGaAs interface for High Carrier Mobility Channel MOSFET", J. Kwo, M. L. Huang, Y. C. Liu, C. A. Lin, W. C. Lee, Y. H. Chang, M. Hong, T. D. Lin, T. W. Pi, W. W. Pai, Y. M. Chang, 43rd IEEE Semiconductor Interface Specialist Conference (SISC), San Diego, CA, Dec. 5-8, 2012.
287. "Interfacial Properties of High k Gate Dielectrics on High Carrier Mobility Semiconductors", J. Kwo, Invited talk at Materials Research Society Spring Meeting, San Francisco, Ca, April 1-5, 2013.
288. "Native-oxides free high-k interfaces: A synchrotron radiation photoemission study", T.-W. Pi, T. D. Lin, H. Y. Lin, Y. T. Liu, Y. C. Chang, T. H. Chiang, G. K. Wertheim, J. Kwo, and M. Hong, invited talk at Materials Research Society Spring Meeting, San Francisco, Ca, April 1-5, 2013.
289. "Pushing the material limit and physics novelty in high k's/high carrier mobility semiconductors for Ultimate CMOS ", T. D. Lin, Y. C. Chang, M. Hong, J. Kwo, T. W. Pi, C. H. Hsu, W. W. Pai, and, Y. P. Chiu, Applied Materials, Hsinchu, Taiwan, May 22, 2013.
290. "Perfection of high k/InGaAs interface - push for ultimate CMOS", 10th US Air Force - Taiwan Nanoscience Workshop, New Sanno Hotel, Tokyo, Japan, Aug. 20-22, 2013.
291. "Realization of III-V MOSFETs using High k Gate Dielectrics on InGaAs Semiconductors", J. Kwo and M. Hong, the 2013 Asia-Pacific Radio Science Conference (AP-RASC'13), Howard International House, Taipei, Taiwan, September 3-7, 2013.
292. "Pushing the ultimate CMOS and more - a physicist's role", Dept. Physics, National Chung Hsing University, Taichung, September 27, 2013
293. "High k/III-V for ultimate CMOS - from MBE to ALD passivation", T. D. Lin, J. Kwo, and M. Hong, 2013 IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC), NCKU, Tainan, Taiwan, October 6-10, 2013.
294. "Synchrotron-radiation photoemission study of clean (In)GaAs surfaces and high-k interfaces", T. W. Pi, T. H. Chiang, Y. T. Liu, H. Y. Lin, Y. C. Chang, T. D. Lin, G. K. Wertheim, J. Kwo, and M. Hong, 2013 IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC), NCKU, Tainan, Taiwan, October 6-10, 2013.
295. "Pushing the ultimate CMOS and beyond", M. Hong, NTU/TSMC/NSC Industrial-Academia Big League Center, National Taiwan University, Taipei, Taiwan, December 31, 2013.
296. "Pushing the ultimate CMOS and beyond", M. Hong, T. D. Lin, W. H. Chang, R. L. Chu, Y. C. Chang, J. Kwo, H. Y. Hung, and T. W. Pi, Special forum "5 nm CMOS and beyond", 2014 Annual Physical Society Rep. of China Meeting, National Chung Hsin University, Taichung, Taiwan, January 21-23, 2014.
297. "Perfecting high k/GaSb(100) interface using molecule beam epitaxy Y2O3", Minghwei Hong and J. Raynien Kwo, Air Force Research Laboratory (Wright-Patterson Air Force Base (WPAFB)), Dayton, Ohio, March 7, 2014.
298. "High k dielectrics on high carrier mobility semiconductors for ultimate CMOS - accomplishments and the remaining challenges", TSMC, Hsinchu, Taiwan, April 24, 2014.
299. "High k dielectrics on high carrier mobility semiconductors for ultimate CMOS and beyond- accomplishments and the remaining challenges", the 11th Taiwan-U.S. AFOSR Nanoscience Program Review & Workshop, National Dong Hwa University, Hualien, Taiwan, May 13-15, 2014.
300. "High k/III-V for ultimate CMOS - interfacial passivation, low ohmic contacts, and device performance", W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong, The 225th ECS meeting, Orlando, FL, May 11-16, 2014.
301. "High k dielectrics on high carrier mobility semiconductors for ultimate CMOS - accomplishments and the remaining challenges", The National Nano Device Laboratories (NDL), Hsinchu, Taiwan, June 26, 2014.
302. "Topological insulator thin films for spintronics", J. Raynien Kwo and Minghwei Hong, The 1st International Beyond CMOS Workshop, IMEC, Leuven, Belgium, October 16-17, 2014.
303. Panel at 1st International Beyond CMOS Workshop, IMEC, Leuven, Belgium, October 16-17, 2014.
304. "Beyond Si CMOS - Physics and Perspectives", Department of Electro-Physics, National Chiao Tung University, Hsinchu, Taiwan, December 4, 2014.
305. "High k oxides on (In)GaAs surfaces studied by synchrotron radiation photoemission", T. W. Pi, Y. T. Fanchiang, Y. H. Lin, T. H. Chiang, K. Y. Lin, Y. K. Su, C. H. Wei, Y. C. Lin, G. K. Wertheim, J. Kwo, and M. Hong, 45th IEEE Semiconductor Interface Specialists Conference (SISC), Bahia Resort Hotel, San Diego, CA, December 10-13, 2014.
306. "Beyond CMOS", Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, December 24, 2014.
307. "Pushing the ultimate CMOS and beyond", M. Hong (洪銘輝), J. Kwo (郭瑞年), T. W. Pi (皮敦文), C. H. Hsu (徐嘉鴻), T. D. Lin (林宗達), W. C. Lee (李威縉), Y. C. Chang (張耀中), and H. Y. Hung (洪宏宜), Physics Society ROC Annual Meeting - 美國真空學會台灣分會 American Vacuum Society (AVS) Taiwan Chapter Session, Topic "New Developments in Atomic Layer Deposition Technology, National Tsing Hua University, Hsinchu, Taiwan, January 29, 2015.