Publication(2005-2011)
2011
283. "Electrical properties and interfacial chemical environments of in-situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs" Y. H. Chang, M. L. Huang, P. Chang, C. A. Lin, Y. J. Chu, B. R. Chen, C. L. Hsu, J. Kwo, T. W. Pi, and M. Hong, Microelectronic Engineering, online publication, 2011.
284. "H2S Molecular Beam Passivation of Ge(001)", C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, M. El-Kazzi, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M.M. Heyns, and M. Caymax, Microelectronic Engineering, in press, 2011.
285. "InGaAs and Ge MOSFETs with high k dielectrics", W.C. Lee, P. Chang, T.D. Lin, L.K. Chu, H.C. Chiu, J. Kwo, M. Hong, Microelectronic Engineering, online publication, 2010.
286. "Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN", W.H. Chang, P. Chang, W.C. Lee, T.Y. Lai, J. Kwo, C.-H. Hsu, J.M. Hong, and M. Hong, J. Crystal Growth, in press (2011).
287. "MBE - enabling technology beyond Si CMOS", P. Chang, W. C. Lee, T. D. Lin, C. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth, in press (2011).
288. "Achieving very high drain current of 1.23 mA/μm in a 1μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET", T.D. Lin, P. Chang, Y.D. Wu, H.C. Chiu, J. Kwo, and M. Hong, J. Crystal Growth, in press (2011).
289. "Low Interfacial Density of States around Mid-gap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As", C. A. Lin, H. C. Chiu, T. H. Chiang, Y. C. Chang, T. D. Lin, J. Kwo, W. E Wang, J. Dekoster, M. Heyns, and M. Hong, J. Crystal Growth, in press (2011).
290. "Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films", H.Y. Hung, S.Y. Huang, P. Chang, W.C. Lin, Y.C. Liu, S.F. Lee, M. Hong, J. Kwo, J. Crystal Growth, in press (2011).
291. "Thermal Annealing and Grain Boundary Effects on Ferromagnetism in Y2O3:Co Diluted Magnetic Oxide Nanocrystals", Y. L. Soo, T. S. Wu , C. S. Wang, S. L. Chang, H. Y. Lee, P. P. Chu, C. Y. Chen, L. J. Chou, T. S. Chan, C. A. Hsieh, J. F. Lee, J. Kwo, and M. Hong, Appl. Phys. Lett. 98, 031906 (2011).
292. "Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) Passivation", C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, and J. Kwo, Appl. Phys. Lett. 98, 062108 (2011).
293. "High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation", T.-W. Pi (皮敦文), M. L. Huang (黃懋霖), W. C. Lee (李威縉), L. K. Chu (朱龍琨), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), Y. C. Wang (王貽樟), Y. D. Wu (吳彥達), M. Hong (洪銘輝), and J. Kwo (郭瑞年), Appl. Phys. Lett. 98, 062903 (2011).
295. "Direct determination of flat-band voltage for metal/high �� oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation", C.-L. Chang, W. C. Lee, L. K. Chu, M. Hong, J. Kwo, and Y.-M. Chang, Appl. Phys. Lett. 98, 171902 (2011).
296. "Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)", Y. C. Liu, P. Chang, S. Y. Huang, L. J. Chang, W. C. Lin, S. F. Lee, M. Hong, and J. Kwo, Journal of Applied Physics 109(7), 07D508 - 07D508-3 (2011).
297. "Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric", W. H. Chang, T. H. Chiang, Y. D. Wu, M. Hong, C. A. Lin, and J. Kwo, J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures 29(3), 03C122- 03C122-4 (2011).
298. "In-situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs (001)-4×6 surface", Y.H. Chang, M.L. Huang, P. Chang, J.Y. Shen, B.R. Chen, C.L. Hsu, T.W. Pi, M. Hong, J. Kwo, Microelectronic Engineering 88, 1101-1104 (2011).
299. "Atomic-layer-deposited Al2O3 and HfO2 on GaN: a comparative study on interfaces and electrical characteristics", Y.C. Chang, M.L. Huang, Y.H. Chang, Y.J. Lee, H.C. Chiu, J. Kwo, M. Hong, Microelectronic Engineering 88, 1207-1210 (2011).
300. "Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (100) using scanning tunneling microscopy", Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, M. Hong, and J. Kwo , Microelectronic Engineering 88, 1058-1060 (2011).
301. "The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer", B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des. 11, 2846-2851 (2011).
302. "Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation", C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, G. Brammertz, M. Scarrozza, G. Pourtois, J. Kwo, M. Hong, J. Dekoster, M. Meuris, M. Heyns, and M. Caymax, Surface Science 605, Issues 19-20, 1778-1783 (2011).
303. "Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics", L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns, Appl. Phys. Lett. 99, 042908 (2011).
2010
271. "Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs - structural intactness of high-temperature annealing", Y. J. Lee, C. H. Lee, L. T. Tung, T. H. Chiang, T. Y. Lai, J. Kwo, C.-H. Hsu, and M. Hong, Journal of Physics D: Applied Physics, 43 (2010) 135101.
272. "InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High Dielectrics for Science and Technology beyond Si CMOS", M. Hong, J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang, Springer book chapter.
273. "High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations", R. L. Chu, T. D. Lin, L. K. Chu, M. L. Huang, C. C. Chang, M. Hong, C. A. Lin, and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3A1 (2010).
274. "Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2", P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3A9 (2010).
275. "Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)", Y. J. Lee, W. C. Lee, M. L. Huang, S. Y. Wu, C. W. Nieh, M. Hong, J. Kwo, and C.-H. Hsu, J. Vac. Sci. Technol. B 28(3), C3A17 (2010).
276. "Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As", Y. D. Wu, T. D. Lin, T. H. Chiang, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. Hong, C. A. Lin and J. Kwo, J. Vac. Sci. Technol. B 28(3), C3H10 (2010).
277. "dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics", T. D. Lin, P. Chang, H. C. Chiu, M. Hong, J. Kwo, Y. S. Lin, and Shawn S. H. Hsu, J. Vac. Sci. Technol. B 28(3), C3H14 (2010).
278. "Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics", T.D. Lin, H.C. Chiu, P. Chang, Y.H. Chang, Y.D. Wu, M. Hong, and J. Kwo, Solid State Electronics 54, 919-924 (2010).
281. "Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric", Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo, Y. S. Lin, S. H. Hsu, J. M. Hong, C. C. Tsai, and M. Hong, Microelectronic Engineering 87(11) 2042 (2010).
282. "Structural characteristics of nano-meter thick Gd2O3 epi-films grown on GaN (0001)", W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo, C. H. Hsu, and M. Hong, M., Crystal Growth & Design, in press, (2010).
2009
257. "Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)", W.-R. Liu, Y.-H. Li, W. F. Hsieh, C.-H. Hsu, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des., 9 (1), 239-242 (2009).
258. "Energy-band parameters of atomic-layer-deposited Al2O3 and HfO2 on InxGa1-xAs", M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, J. Kwo, and M. Hong, Appl. Phys. Lett. 94, 052106 (2009).
259. "Research Advances on III-V MOSFET Electronics Beyond Si CMOS", J. Kwo and M. Hong, J. Crystal Growth 311, 1944-1949 (2009).Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
260. "Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics", C. A. Lin, T. D. Lin, T. H. Chiang, H. C. Chiu, P. Chang, M. Hong, and J. Kwo, J. Crystal Growth 311, 1954-1957 (2009).(▲:0, SCI: 1.757) Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
261. "Inversion-Channel Enhancement Mode GaAs MOSFETs with Regrown Source and Drain Contacts", C. C. Liao, D. Cheng, C. C. Cheng, K. Y. Cheng, M. Feng, T. H. Chiang, J. Kwo, and M. Hong, J. Crystal Growth 311, 1958-1961 (2009).(▲:0, SCI: 1.757) Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
262. "GaN on Si with nm-thick single crystal Sc2O3 as a template using molecular beam epitaxy", W. C. Lee, Y. J. Lee, J. Kwo, C. H. Hsu, C. H. Lee, S. Y. Wu, H. M. Ng, and M. Hong, J. Crystal Growth 311, 2006-2009 (2009).Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
263. "GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth", Y. H. Chang, H. C. Chiu, W. H. Chang, J. Kwo, C. C. Tsai, J. M. Hong, and M. Hong, J. Crystal Growth 311, 2084-2086 ( 2009).Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
264. "High k dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties", W. H. Chang, C. H. Lee, P. Chang, Y. C. Chang, Y. J. Lee, J. Kwo, C. C. Tsai, J. M. Hong, C.-H. Hsu, and M. Hong, J. Crystal Growth 311, 2183-2186 (2009).Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
265. "Molecular Beam Epitaxy-Grown Al2O3/HfO2 High-κ Dielectrics for Germanium", W. C. Lee, B. H. Chin, L. K. Chu, T. D. Lin, Y. J. Lee, L. T. Tung, C. H. Lee, M. Hong, and J. Kwo, J. Crystal Growth 311, 2187-2190 (2009).Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
266. "Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge", L. K. Chu, W. C. Lee, M. L. Huang, Y. H. Chang, L. T. Tung, C. C. Chang, Y. J. Lee, J. Kwo, and M. Hong, J. Crystal Growth 311, 2195-2198 (2009).(▲:2, SCI: 1.757) Presented at (15th International Conference on Molecular Beam Epitaxy (MBE2008), August 4-8, 2008)
267. "Ga2O3(Gd2O3) on Ge without interfacial layers: energy-band parameters and metal oxide semiconductor devices", L. K. Chu, T. D. Lin, M. L. Huang, R. L. Chu, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 94, 202108 (2009).(▲:0, SCI: 3.726)
268. "Nano-electronics of high k dielectrics on InGaAs for key technologies beyond Si CMOS", T. D. Lin, P. Chang, H. C. Chiu, Y. C. Chang, C. A. Lin, W. H. Chang, Y. J. Lee, Y. H. Chang, M. L. Huang, J. Kwo, and M. Hong, Conference Proceedings (invited talk), InP and related Material Conference (IPRM), Newport Beach, California, May 10-14, 2009.
269. "Advances on III-V MOSFET for Science and Technology beyond Si CMOS", J. Kwo, T. D. Lin, M. L. Huang, P. Chang, Y. J. Lee, and M. Hong, ECS Transactions, invited talk at the 215th The Electrochemical Society Meeting, San Francisco, California, May 24 -29, 2009.
270. "InGaAs MOSCAPS and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3(Gd2O3) as a gate dielectric", T. D. Lin, H. C. Chiu, P. Chang, W. C. Lee, T. H. Chiang, J. Kwo, W. Tsai, and M. Hong, ECS Transactions, invited talk at the 215th The Electrochemical Society Meeting, San Francisco, California, May 24 -29, 2009.
2008
240. "Inelastic Electron Tunneling Spectroscopy Study of Metal-oxide-semiconductor Diodes Based on High-κ Gate Dielectrics", S. L. You, C. C. Huang, C. J. Wang, H. C. Ho, J. Kwo, and W. C. Lee, K. Y. Lee, Y. D. Wu, Y. J. Lee, and M. Hong, Appl. Phys. Lett, 92, 012113, (2008).(▲:1, SCI: 3.977)
241. "Time Dependent Preferential Sputtering in the HfO2 layer on Si (100)", S. J. Chang, W. C. Lee, J. Hwang, M. Hong, and J. Kwo, Thin Solid Films 516, 948 - 952 (2008).(▲:5, SCI: 1.666)
242. "Nano-meter thick single crystal Y2O3 films grown on Si (111) with structures approaching perfection", C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C. H. Hsu, Appl. Phys. Lett, 92, 061914 (2008).(▲:2, SCI: 3.977)
243. "Atomic-layer-deposited �nHfO2 on In0.53Ga0.47As: passivation and energy-band parameters", Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao, and K. Y. Cheng, Appl. Phys. Lett, 92, 072901 (2008).(▲:19, SCI: 3.977)
244. "Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (111) using a γ-Al2O3 buffer layer", W. R. Liu, Y. H. Li, W. F. Hsieh, C. H. Hsu, W. C. Lee, M. Hong, and J. Kwo, J. Phys. D: Appl. Phys. 41, 065105 (2008).(▲：0, SCI：2.220)
245. "1 nm equivalent oxide thickness in Ga2O3(Gd2O3)/In0.2Ga0.8As metal-oxide-semiconductor capacitors", K. H. Shiu, T. H. Chiang, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, Appl. Phys. Lett. 92, 172904 (2008).(▲:11, SCI: 3.977)
246. "Transmission Electron Microscopy Characterization of HfO2/GaAs(001) Heterostructures Grown by Molecular Beam Epitaxy", S. C. Liou, M.-W. Chu, C. H. Chen, Y. J. Lee, P. Chang, W. C. Lee, M. Hong, and J. Kwo, Applied Phys. A, DOI: 10.1007/s00339-008-4493-3 (2008).(▲：1, SCI：1.857)
247. "Growth and Structural Characteristics of GaN/AlN/nano thick ��-Al2O3/Si (111)", W. C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee, M. Hong, H. M. Ng, J. Kwo, and C. H. Hsu, J. Vac. Sci. Technol. B 26, 1064 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.(▲：4, SCI：1.597)
248. "High-quality nano thick single crystal Y2O3 films epitaxially grown on Si (111) - growth and structural characteristics " Y. J. Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, A. R. Kortan, M. Hong, J. Kwo, and C.-H. Hsu, J. Vac. Sci. Technol. B 26, 1124 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.（▲：3, SCI：1.597）
249. "Molecular beam epitaxy grown Ga2O3(Gd2O3) high-κ dielectrics for Germanium passivation - x-ray photoelectron spectroscopy (XPS) and electrical characteristics", C. H. Lee, T. D. Lin, K. Y. Lee, L. T. Tung, Y. C. Chang, M. L. Huang, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 26, 1128 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.（▲：5, SCI：1.597）
250. "Oxide scalability in Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs hetero-structures" K. H. Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee, P. Chang, L. T. Tung, M. Hong, J. Kwo, and W. Tsai, J. Vac. Sci. Technol. B 26, 1132 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.( ▲：4, SCI：1.597）
251. "Si metal-oxide-semiconductor devices with high κ dielectrics fabricated using a novel MBE template approach followed by atomic layer deposition" C. H. Pan, J. Kwo, K. Y. Lee, W. C. Lee, L. K. Chu, M. L. Huang, Y. J. Lee, and M. Hong, J. Vac. Sci. Technol. B 26, 1178 (2008). 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico/USA, September 23-26, 2007.(▲：1, SCI：1.597)
252. "Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As", K. Y. Lee, Y. J. Lee, P. Chang, M. L. Huang, Y. C. Chang, M. Hong, and J. Kwo, Appl. Phys. Lett. 92, 252908 (2008).(▲:7, SCI: 3.977)
253. "High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor", T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 93, 033516 (2008).(▲:20, SCI: 3.977)
254. "Inversion-channel GaN nMOSFET with atomic-layer-deposited Al2O3 as gate dielectric", Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H. Lee, K. H. Shiu, M. Hong, J. Kwo, C. C. Tsai, and J. M. Hong, Appl. Phys. Lett. 93, 053504 (2008).(▲:4, SCI: 3.977)
255. "Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric", C. P. Chen, T. D. Lin, Y. J. Lee, Y. C. Chang, M. Hong, and J. Kwo, Solid-State Electronics 52, 1615 (2008).(▲:4, SCI: 1.577)
256. "Achieving low interfacial trap density in atomic layer deposited Al2O3 on In0.53Ga0.47As", H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 93, 202903 (2008).(▲:2, SCI: 3.977)
2007
223. "Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications", Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, and Minghwei Hong, Journal of The Electrochemical Society, 154 (4) G99-G102, 2007.(▲:4, SCI: 2.387)
224. "Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant", Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, C.-H. Hsu, and J. Kwo, Appl. Phys. Lett. 90, 152908 (2007).(▲:13, SCI:3.977) (The paper has also been selected for the April 23, 2007 issue of Virtual Journal of Nanoscale Science & Technology.).
225. "Depletion mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric", P. J. Tsai, L. K. Chu, Y. W. Chen, Y. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, J. Crystal Growth 301-302, 1013-1016, (2007).(▲:7, SCI: 1.809) (14th International Conf. on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).
226. "Interfacial trap characteristics in depletion mode GaAs MOSFET's", T. C. Lee, C. Y. Chan, P. J. Tsai, Shawn S. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 301-302, 1009-1012, (2007).(▲:0, SCI: 1.809) (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).
227. "Structural and Magnetic properties of Epitaxial Fe3Si/GaAs Heterostructures", Y. L. Hsu, Y. J. Lee, Y. H. Chang, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong, and J. Kwo, J. Crystal Growth 301-302, 588, 2007.(▲:3, SCI: 1.809) (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).
228. "MBE grown high κ dielectrics of Ga2O3(Gd2O3) for GaN", Y. C. Chang, Y. J. Lee, Y. N. Chiu, T. D. Lin, S. Y. Wu, H. C. Chiu, J. Kwo, Y. H. Wang, and M. Hong, J. Crystal Growth 301-302, 390-393 (2007). 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.
229. "MBE grown high-quality Gd2O3/Si (111) hetero-structure", T. D. Lin, M. C. Hang, C. H. Hsu, J. Kwo, and M. Hong, J. Crystal Growth 301-302, 386-389, (2007). (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).(▲:5, SCI: 1.809)
230. "A novel MBE template approach for ALD high �� dielectrics growth", K. Y. Lee, W. C. Lee, M. L. Huang,, C. H. Chang, Y. J. Lee, T. B. Wu, M. Hong, and J. Kwo, J. Crystal Growth 301-302, 378, 2007. (14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006).(▲:2, SCI: 1.809)
231. "Determination of three-dimensional interfacial strain - A novel method of probing interface structure with x-ray Bragg-surface diffraction", W. C. Sun, C. H. Chu, H. C. Chang, B. K. Wu, Y. R. Chen, C. W. Cheng, M. S. Chiu, Y. C. Shen, H. H. Wu, Y. S. Hung, S. L. Chang, M. H. Hong, M. T. Tang, Y. Stetsko, Thin Solid Films 515 (14), 5716-5723 MAY 23, 2007.(▲:0, SCI: 1.666)
232. "Defining new frontiers in electronic devices with high k dielectrics and interfacial engineering", M. Hong, W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, Y. J. Lee, J. Kwo, C. H. Hsu and H. Y. Lee, Thin Solid Films 515, 5581-5586, (2007). (Invited paper, Intl 9sxns, 2006).(▲:2, SCI: 1.666)
233. "III-V MOSFET's with High �� Dielectrics", M. Hong, J. R. Kwo, P. C. Tsai, Y. C. Chang, M. L. Huang, C. P. Chen, and T. D. Lin, Japanese Journal of Applied Physics, 46, Part 1 Issue 5B, 3167-3180 (2007). (Invited talk IWDTF (Dielectric Thin Films for Future ULSI Devices) 2006 Kawasaki, Japan.(▲:21, SCI: 1.222)
234. "Structural and electrical characteristics of atomic layer deposited high �� HfO2 on GaN", Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y. N. Chiu, J. Kwo, and Y. H. Wang, Applied Physics Letters 90, 232904 (2007).(▲:7, SCI:3.977)
235. "Observation of Room Temperature Ferromagnetic Behavior in Cluster Free, Co doped HfO2 Films", Y. H. Chang, Y. L. Soo, W. C. Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, M. Hong, J. Kwo, S. F. Lee, J. M. Ablett, and C-. C. Kao, Applied Physics Letters 91, 082504 (2007).(▲:2, SCI:3.977)
236. "Advance in Next Century Nano CMOSFET Research and Its Future Prospects for Industry", H. L. Hwang, Y. K. Chiou, C. H. Chang, C. C. Wang, K. Y. Lee, T. B. Wu, R. Kwo, M. Hong, K. S. Chang-Liao, C. Y. Lu, C. C. Lu, F. C. Chiu, C. H. Chen, J. Y. M. Lee, and A. Chin, Applied Surface Science 254 (1): 236-241 Sp. Iss. SI OCT 31 (2007).(▲:0, SCI: 1.436)
237. "Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)", Z. K. Yang, W. C. Lee, Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B. H. Lin, C.-H. Hsu, and J. Kwo, Appl. Phys. Lett. 91, 202909 (2007).(▲:2, SCI: 3.977)
238. "Ga2O3(Gd2O3)/Si3N4 Dual -Layer Gate Dielectric for InGaAs Enhancement Mode MOSFET with Channel Inversion", J.-F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, M. Hong, J. Kwo, S. Cui, and T. P. Ma, Appl. Phys. Lett. 91, 223502 (2007).(▲:8, SCI: 3.977)
239. "Local environment surrounding Co in MBE-grown Co-doped HfO2 thin films probed by EXAFS", Y. L. Soo, S. C. Weng, W. H. Sun, S. L. Chang, W. C. Lee, Y. S. Chang, J. Kwo, M. Hong, J. M. Ablett, C.-C. Kao, D. G. Liu, and J. F. Lee, PHYSICAL REVIEW B 76, 132404, (2007).(▲:1, SCI:3.107)
2006
216. "Structures of Sc2O3 films epitaxially grown on ��-Al2O3 (0001)", A. R. Kortan, M. Hong, J. Kwo, C. P. Chen, J. P. Mannaerts, S. H. Liou, and N. Kopylov, Appl. Phys. Lett. 88, 021906, 2006.(▲:0, SCI: 4.127)
217. "Energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs heterostructures", M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 89, 012903, 2006.(▲:26, SCI: 4.308)
218. "Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction", W. C. Sun, H. C. Chang, B. K. Wu, Y. R. Chen, C. H. Chu, S. L. Chang, M. Hong, M. T. Tang, and Yu. P. Stetsko, Appl. Phys. Lett, 89, 091915, 2006.(▲:4 SCI: 4.127)
219. "Structure of HfO2 films epitaxially grown on GaAs (001)", C. H. Hsu, P. Chang, W. C. Lee, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. 89 (12), 122907, 2006.(▲:11 SCI: 4.127)
220. "Structural and electrical studies of Ga2O3(Gd2O3)/GaAs under high temperature annealing", C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502 (2006).(▲:13, SCI: 2.498)
221. "A molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics", K. Y. Lee, W. C. Lee, Y. J. Lee, M. L. Huang, C. H. Chang, T. B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 222906, 2006.(▲:6, SCI:4.127)
222. "Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As", C.-H. Chang, Y.-K. Chiou, Y.-C. Chang, K.-Y. Lee, T.-D. Lin, T.-B. Wu, and M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 242911, 2006.(▲:20, SCI: 4.127)
2005
207. "Thin single crystal Sc2O3 films epitaxially grown on Si (111)", C. P. Chen, M. Hong, J. Kwo, H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and J. P. Mannaerts, Journal of Crystal Growth 278, 638-642, 2005 (International Conference on MBE, August 23-27, 2004).(▲:7, SCI: 1.707)
208. "MBE Grown High k Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics", W. C. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Huang, Y. L. Hsu, J. P. Mannaerts, R. L. Lo, F. R. Chen, S. Maikap, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, and J. Kwo, Journal of Crystal Growth 278, 619-623, 2005 (International Conference on MBE, August 23-27, 2004).(▲:10, SCI: 1.707)
209. "Depth-profile study of the electronic structures at Ga2O3(Gd2O3)- and Gd2O3-GaN interfaces by x-ray photoelectron spectroscopy", T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, and J. Kwo, Journal of Crystal Growth 278 624-628, 2005. (International Conference on MBE, August 23-27, 2004).(▲:4, SCI: 1.707)
210."Depth-profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy", T. S. Lay, S. C. Chang, G. J. Din, C. C. Yeh, W. H. Hung, W. C. Lee, J. Kwo and M. Hong, J. Vac. Sci. & Technol. 23(3), 1291-1293, May-Jun, 2005. (NAMBE 2004 - 22nd North American MBE conference - Banff, Alberta, Canada October 11-13, 2004.) (▲:1, SCI: 1.664)
211. "Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface", Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905, 2005.(▲:24, SCI: 4.308)
212. "High-quality thin single crystal γ-Al2O3 films grown on Si (111)", S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. C. Lee, and Y. L. Huang, Appl. Phys. Lett. 87, 091908, 2005.(▲:13, SCI: 4.308)
213. "High-Quality Nano-Thickness Single Crystal Sc2O3 film Grown on Si (111)", M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. R. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, E Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 87, 251902, 2005.(▲:8, SCI: 4.308)
214. "Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3", M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104, 2005.(▲:75, SCI: 4.308)
215. "Probing interface Strain with x-ray Bragg-surface diffraction", W.-C. Sun, H.-C. Chang, P.-K. Wu, Y.-R. Chen, C.-H. Chu, C.-W. Cheng, M.-S. Chiu, Y.-C. Shen, H.-H. Wu, W.-S. Sun, Y.-R. Lee, M. Hong, Yu. P. Stetsko, M.-T. Tang, and S.-L. Chang, Acta Crystallogr. A61, C410, 2005.(▲:0, SCI: 1.829)
