Publication(2012-2020)

2012-01-01

Google Scholar - M.Hong

https://scholar.google.com.tw/citations?hl=zh-TW&user=SPy33uAAAAAJ&view_op=list_works&citft=1&citft=2&citft=3&email_for_op=gary0989294926%40gmail.com&sortby=pubdate

2020

1.Low-temperture grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission; YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, MH Hong, TW PiApplied Physics Express,2020 June

2.Topological insulator interfaced with ferromagnetic insulators: Bi2Te3 thin films on magnetite and iron garnets; VM Pereira, VM Pereira, SG Altendorf, CE Liu, SC Liao, AC Komarek, M Guo, H-J Lin, CT Chen, M. Hong, J. Kwo, LH Tjeng, CN Wu,Physical Review Materials 4 (6), 064202,2020 June

3.Electronic structure of topological insulator Bi2Se3 thin films on thulium iron garnet heterostructures; SW Huang, KY Lin, CC Chen, M Guo, CK Cheng, CM Cheng, M Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March

4.Evolution of the band structure of α-Sn (001) thin film on InSb (001); Ko-Hsuan Chen, Keng-Yung Lin, Sheng-Wen Huang, Chao-Kai Cheng, Hsiao-Yu Lin, Shang-Wei Lien, Tay-Rong Chang, Cheng-Maw Cheng, Minghwei Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March

5.Band structure study of elemental topological material α-Sn on InSb (111) B; Keng-Yung Lin, Ko-Hsuan Chen, Sheng-Wen Huang, Chao-Kai Cheng, Cheng-Maw Cheng, Minghwei Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March 

6.Topological insulator interfaced with ferromagnetic insulators: Bi2Te3 thin films on magnetite and iron garnets; Chi-Nan Wu, Vanda Pereira, Simone Altendorf, Sheng-Chieh Liao, Cheng-En Liu, Alexander Komarek, Mengxin Guo, Hong-Ji Lin, Chien-Te Chen, Minghwei Hong, Jueinai Kwo, Liu Tjeng, Bulletin of the American Physical Society 65, 2020 March 

7.Magneto-transport properties of bulk-insulating topological insulators (Bi,Sb)2Te3 on thulium iron garnets; Chun-Chia Chen, Shang Rong Yang, Yu-Ting Fanchiang, Wei-Jhih Zou, Mengxin Guo, Chao-Kai Cheng, Sheng-Wen Huang, Keng-Yung Lin, Ko-Hsuan Chen, Minghwei Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March

8.Thermal effect in Pt/YIG heterostructure induced by direct microwave power injection; Yu-Chi Liu, Chi-Nan Wu, Liang-Juan Chang, Yu-Ting Fanchiang, Chun-Chih Tseng, Minghwei Hong, Shang-Fan Lee, Jueinai Kwo, Journal of Physics D: Applied Physics 53 (12), 125002, 2020 January

2019

1. S. R. Yang, Y. T. Fanchiang, C. C. Chen, C. C. Tseng, Y. C. Liu, M. X. Guo, M. Hong, 

S. F. Lee, J. Kwo (2019, Jul). Evidence for exchange Dirac gap in magnetotransport of

topological insulator-magnetic insulator heterostructures. Physical Review B,

100 (4), 045138.

2. K. Y. Lin, H. W. Wan, K. H. M. Chen, Y. T. Fanchiang, W. S. Chen, Y. H. Lin, Y. T. Cheng,

C. C. Chen, H. Y. Lin, L. B. Young, C. P. Cheng, T. W. Pi, J. Kwo, M. Hong (2019, Apr).

Molecular beam epitaxy, atomic layer deposition, and multiple functions

connected via ultra-high vacuum. Journal of Crystal Growth, 512, 223-229. 

本人 為通訊作者.

3. Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Jueinai Kwo, Minghwei

Hong, Tun-Wen Pi (2019, Apr). Microscopic Views of Atomic and Molecular

Oxygen Bonding with epi Ge (001)-2× 1 Studied by High-Resolution

Synchrotron Radiation Photoemission. Nanomaterials, 9 (4), 554.

4. Lawrence Boyu Young, Chao-Kai Cheng, Keng-Yung Lin, Yen-Hsun Lin, HsienWen Wan, Ren-Fong Cai, Shen-Chuan Lo, Mei-Yi Li, Chia-Hung Hsu, Jueinai

Kwo, Minghwei Hong (2019, Mar). Epitaxy of High-Quality Single-Crystal

Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer

Deposition. Crystal Growth & Design, 19 (4), 2030-2036. 本人為通訊作者.

5. C. C. Chen, K. H. M. Chen, Y. T. Fanchiang, C. C. Tseng, S. R. Yang, C. N. Wu,

M. X. Guo, C. K. Cheng, S. W. Huang, K.Y. Lin, C. T. Wu, M. Hong, and J. Kwo

(2019, Jan). Topological insulator Bi2Se3 films on rare earth iron garnets and

their high-quality interfaces. Applied Physics Letters, 114 (3), 031601.

2018

6. Wei-Rein Liu, Wei-Lun Huang, Yung-Chi Wu, Liang-Hsun Lai, Chia-Hung Hsu,

Wen-Feng Hsieh, Tsung-Hung Chiang, HW Wan, M Hong, J Kwo (2018, Oct).

Correction to Exciton Localization of High-Quality ZnO/MgxZn1-xO Multiple

Quantum Wells on Si (111) with a Y2O3 Buffer Layer. ACS Applied Nano

Materials, 1 (10), 5958-5958.

7. Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Jueinai Kwo, Minghwei

Hong, Tun-Wen Pi (2018, Oct). Atom-to-atom interaction of O2 with epi Ge

(001)-2× 1 in elucidating GeOx formation. Applied Physics Express, 11 (11),

115701.

8. C.-P. Cheng, W. S. Chen, Y. T. Cheng, H. W. Wan, K. Y. Lin, L. B. Young, C. Y.

Yang, T. W. Pi, J. Kwo, M. Hong (2018, Aug). In situ direct determination of

band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type

GaAs(001)-4×6 surface. J. Phys. D: Appl. Phys. , 51, 405102. 本人為通訊作者.

9. C. N. Wu, C. C. Tseng, Y. T. Fanchiang, C. K. Cheng, K. Y. Lin, S. L. Yeh, S. R.

Yang, C. T. Wu, T. Liu, M. Wu, M. Hong, and J. Kwo (2018, Jul). High-quality

thulium iron garnet films with tunable perpendicular magnetic anisotropy by offaxis sputtering - correlation between magnetic properties and film strain.

Scientific Reports, 8, 11087. MOST 105-2112-M-007-014-MY3.

10. Wei-Rein Liu, Wei-Lun Huang, Yung-Chi Wu, Liang-Hsun Lai, Chia-Hung Hsu,

Wen-Feng Hsieh, Tsung-Hung Chiang, HW Wan, M Hong, J Kao (2018, Jul).

Exciton Localization of High-Quality ZnO/MgxZn1-xO Multiple Quantum

Wells on Si (111) with a Y2O3 Buffer Layer. ACS Applied Nano Materials, 1 (8),

3829-3836.

11. H. Y. Lin, C. K. Cheng, K. H. M. Chen, C. C. Tseng, S. W. Huang, M. T. Chang,

S. C. Tseng, M. Hong, and J. Kwo (2018, Jun). A new stable, crystalline capping

material for topological insulators. APL Materials, 6, 066108. MOST 105-2112-

M-007-014-MY3.

12. C. -P. Cheng, W. S. Chen, Y. T. Cheng, H. W. Wan, C. Y. Yang, T. W. Pi, J. Kwo,

and M. Hong (2018, Jan). Atomic Nature of the Growth Mechanism of Atomic

Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in-situ Synchrotron 

Radiation Photoelectron Spectroscopy. ACS Omega, 3, 2111. 本人 為通訊作者.

13. C. N. Wu, C. C. Tseng, K. Y. Lin, C. K. Cheng, S. L. Yeh, Y. T. Fanchiang, M.

Hong, and J. Kwo (2018, Jan). "High-quality single-crystal thulium iron garnet

films with perpendicular magnetic anisotropy by off-axis sputtering". AIP

Advances, 8, 055904.

14. Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N.

Wu, S. F. Lee, M. Hong, J. Kwo (2018, Jan). Strongly exchange-coupled and

surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures. Nature Communications, 9(1), 223. MOST 105-2112-M-007-014-MY3.

2017

15. H. W. Wan, K. Y. Lin, C. K. Cheng, Y. K. Su, W. C. Lee, C. H. Hsu, T. W. Pi, J.

Kwo, M. Hong (2017, Nov). GaAs Metal-Oxide-Semiconductor Push with

Molecular Beam Epitaxy Y2O3 - in comparison with atomic layer deposited

Al2O3. J. Crystal Growth, 477, 179-182. 本人為通訊作者.

16. M. Hong, H. W. Wan, P. Chang, T. D. Lin, Y. H. Chang, W. C. Lee, T. W. Pi, and

J. Kwo (2017, Nov). Effective Surface Passivation of In0.53Ga0.47As(001)

using molecular beam epitaxy and atomic layer deposited HfO2 - a comparative

study. J. Crystal Growth, 477, 159-163. 本人為第一作者.

17. Y. H. Lin, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi,

J. Kwo, M. Hong (2017, Nov). Interfacial Characteristics of Y2O3/GaSb(001)

Grown by Molecular Beam Epitaxy and Atomic Layer Deposition. J. Crystal

Growth, 477, 164-168. 本人為通訊作者.

18. M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin,

T. W. Pi, and J. Kwo (2017, Sep). "Perfecting the Al2O3/In0.53Ga0.47As

interfacial electronic structure in pushing metal-oxide-semiconductor fieldeffect-transistor device limits using in-situ atomic-layer-deposition". Appl. Phys.

Lett., 111, 123502. 本人為第一作者.

19. K. H. M. Chen (陳可璇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), C. K. Cheng

(鄭兆凱), X. Q. Zhang (張鋅權), C. M. Cheng (鄭澄懋), S. F. Lee (李尚凡), C.

H. Hsu (徐嘉鴻), Y. H. Lee (李奕賢), M. Hong (洪銘輝), and J. Kwo (郭瑞年)

(2017, Aug). Van der Waals epitaxy of topological insulator Bi2Se3 on single

layer transition metal dichalcogenide MoS2. Appl. Phys. Lett., 111, 083106.

20. Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N.

Wu, S. F. Lee, M. Hong, J. Kwo (2017, Aug). Strongly exchange-coupled and

surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures. arXiv:1708.00593. (Accepted). 

21. C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T.

Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong (2017, Jun).

Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001)

using atomic layer deposition. Microelectronic Engineering, 178, 125-127. 本人 為通訊作者.

22. Y. T. Cheng, Y. H. Lin, W. S. Chen, K. Y. Lin, H. W. Wan, C.-P. Cheng, H. H.

Cheng, J. Kwo, M. Hong (2017, Jun). Surface electronic structure of epi

germanium (001)-2x1. Appl. Phys. Express 10, DOI: 10.7567/APEX.10.075701. 本人為通訊作者.

23. K. Y. Lin, L. B. Young, C. K. Cheng, K. H. Chen, Y. H. Lin, H. W. Wan, R. F.

Cai, S. C. Lo, M. Y. Li, J. Kwo, M. Hong (2017, May). Enhancement of

dielectric constant using high-temperature mixed and sub-nano-laminated atomic

layer deposited Y2O3/Al2O3 on GaAs(001). Microelectronic Engineering, 178,

271-274. (Accepted). 本人為通訊作者.

24. T. W. Chang, K. Y. Lin, Y. H. Lin, L. B. Young, J. Kwo, M. Hong (2017, Apr).

Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via

electrical responses - a comparative study. Microelectronic Engineering, 178,

199-203. (Accepted). 本人為通訊作者.

25. H. W. Wan, Y. H. Lin, K. Y. Lin, T. W. Chang, J. Kwo, M. Hong (2017, Mar).

Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001)

interface. Microelectronic Engineering, 178, 154-157. 本人為通訊作者.

26. T. W. Pi (皮敦文), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), Y. T. Cheng (鄭伊 婷), G. J. Wei (魏國珍), K. Y. Lin (林耕雍), C. -P. Cheng (鄭秋平), J. Kwo (郭瑞年), and M. Hong (洪銘輝) (2017, Mar). Relevance of GaAs(001) surface

electronic structure for high frequency dispersion on n-type accumulation

capacitance. Appl. Phys. Lett. , 110, 052107 (2017). doi: 10.1063/1.4975479.

(Accepted). 本人為通訊作者.

27. W.-J. Hsueh, P.-C. Chiu, M.-H. Hong, and J.-I. Chyi (2017, Mar). Suppressing

Ge Diffusion by GaAsSb for Molecular Beam Epitaxy of InGaAs on Ge.

Physica Status Solidi B, 600589 (2017). Doi: 10.1002/pssb.20160058.. 本人為通 訊作者.

28. Chiu-Ping Cheng, Wan-Sin Chen, Keng-Yung Lin, Guo-Jhen Wei, Yi-Ting

Cheng, Yen-Hsun Lin, Hsien-Wen Wan, Tun-Wen Pi, Raymond T. Tung, Jueinai

Kwo, and Minghwei Hong (2017, Jan). Atomic nature of the Schottky barrier

height formation of the Ag/GaAs(001)-2×4 interface: an in-situ synchrotron

radiation photoemission study. Applied Surface Science, 393, 294-298. (SCI,

27/145 PHYSICS, APPLIED). MOST 104-2112-M-415-006. 本人為通訊作者.

29. L. B. Young, C. K. Cheng, G.J. Lu, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R.

F. Cai, S. C. Lo, C. H. Hsu, J. Kwo, M. Hong (2017, Jan). Atomic layer

deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,

35(1), 01B123. (SCI, 65/145 PHYSICS, APPLIED). MOST 105-2112-M-002-

022. 本人為通訊作者.

2016

30. Ja-Hon Lin, Yu-kai Shen, Wei-Rein Liu, Chia-Hui Lu, Yao-Hui Chen, Chun-peng

Chang, Wei-Chin Lee, Minghwei Hong, J. R. Kwo, C. Hsu, and Wen-Feng Hsieh

(2016, Jul). Coherent acoustic phonon oscillation accompanied with backward

acoustic pulse below exciton resonance in a ZnO epi-film on oxide-buffered

Si(111). Journal of Physics D: Applied Physics, 49, 325102-325106 . (SCI,

31/145 PHYSICS, APPLIED). NSC 102-2112-M-027-001-MY3.

31. Y. H. Lin, C.-H. Fu, K.-Y. Lin, K.-H. Chen, T.-W. Chang, J. R. Kwo, and M.

Hong (2016, Jul). Low interfacial trap density and high-temperature thermal

stability in atomic-layer-deposited single crystal Y2O3/n-GaAs(001). Applied

Physics Express , 9, 081501. (SCI, 41/145 PHYSICS, APPLIED). MOST 102-

2112-M-002-022-MY3. 本人為通訊作者.

32. C. Y. Wang, H. Y. Lin, S. R. Yang, K. H. M. Chen, Y. H. Lin, K. H. Chen, L. B.

Young, C. K. Cheng, Y. T. Fanchiang, S. C. Tseng, M. Hong, and J. Kwo (2016,

May). Demonstration of large field effect in topological insulator films via a

high-kappa back gate. Appl. Phys. Lett., 108, 202403. (SCI, 28/145 PHYSICS,

APPLIED). MOST 102-2112-M-007-010-MY3. 本人為通訊作者.

2015

33. C.H. Fu, Y.H. Lin, W.C. Lee, T.D. Lin, R.L. Chu, L.K. Chu, P. Chang, M.H.

Chen, W.J. Hsueh, S.H. Chen, G.J. Brown, J.I. Chyi, J. Kwo, and M. Hong

(2015, Nov). Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge

MOSFETs with a common high k gate dielectric using a CMOS compatible

process. Microelectronic Engineering, 147, 330-334. (SCI, 91/145 PHYSCIS,

APPLIED). MOST 102-2112-M-002-022-MY3. 本人為通訊作者.

34. S.Y. Wu, K.H. Chen, Y.H. Lin, C.K. Cheng, C.H. Hsu, J. Kwo, M. Hong (2015,

Nov). Single-crystal atomic layer deposited Y2O3 on GaAs(001) - growth,

structural, and electrical characterization. Microelectronic Engineering, 147,

310-313. (SCI, 91/145 PHYSICS, APPLIED). NSC 102-2112-M-002-022-MY3. 本人為通訊作者.

35. Y. T. Fanchiang, T. H. Chiang, T. W. Pi, G. K. Wertheim, J. Kwo, and M. Hong

(2015, Nov). Reconstruction at the interface of one cycle of trimethylaluminum

and water on GaAs(111)A-2x2 from atomic layer deposition. Applied Physics

Express, 8, 126602. (SCI, 41/145 PHYSICS, APPLIED). MOST 102-2112-M002-022-MY3. 本人為通訊作者.

36. Y. H. Lin, C. K. Cheng, K. H. Chen, C. H. Fu, T. W. Chang, C. H. Hsu, J. Kwo,

and M. Hong (2015, Oct). Single-crystal Y2O3 epitaxially on GaAs(001) and

(111) using atomic layer deposition. Materials, 8(10), 7084-7093. (SCI, 63/271

MATERIALS SCIENCE, MULTIDISCIPLINARY). MOST 102-2112-M-002-

022-MY3. 本人為通訊作者.

37. Y. C. Liu, Y. W. Chen, S. C. Tseng, M. T. Chang, S. C. Lo, Y. H. Lin, C. K.

Cheng, H. Y. Hung, C. H. Hsu, J. Kwo*, and M. Hong* (2015, Sep). Epitaxial

ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and

interface. Appl. Phys. Lett., 107, 122402. (SCI, 28/145 PHYSICS, APPLIED).

MOST 102-2112-M-002-022-MY3. 本人為通訊作者.

38. C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin,

S. F. Lee, M. Hong*, and J. Kwo* (2015, Apr). Strongly enhanced spin current in

topological insulator/ferromagnetic metal heterostructures by spin pumping.

Journal of Applied Physics, 117, 17D148. 本人為通訊作者.

39. T. W. Pi*, Y. H. Lin, Y. T. Fanchiang, T. H. Chiang, C. H. Wei, Y. C. Lin, G. K.

Wertheim, J. Kwo*, and M Hong* (2015, Mar). In-situ atomic layer deposition

of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces:

electronic and electric structures. Nanotechnology, 26, 164001. 本人為通訊作

者.

2014

40. R. L. Chu, T. H. Chiang, W. J. Hsueh, K. H. Chen, K. Y. Lin, G. J. Brown, J. I.

Chyi, J. Kwo , and M. Hong (2014, Nov). Passivation of GaSb using molecular

beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance

self-aligned inversion-channel p-metal-oxide-semiconductor field-effecttransistors. Appl. Phys. Lett. , 105, 182106. (SCI, 20/136 Physics, Applied).

MOST 102-2112-M-002-022-MY3. 本人為通訊作者.

41. H. Y. Hung, T. H. Chiang, B. Z. Syu, Y. T. Fanchiang, J. G. Lin, S. F. Lee, M.

Hong, and J. Kwo (2014, Oct). Observation of Strongly Enhanced Inverse Spin

Hall Voltage in Fe3Si/GaAs Structures. Appl. Phys. Lett., 105, 152413. (SCI,

20/136 Physics, Applied). MOST 102-2112-M-007-010-MY3. 本人為通訊作者.

42. Tsung-Hung Chiang, Shao-Yun Wu, Tsung-Shiew Huang, Chia-Hung Hsu, J.

Raynien Kwo, and Minghwei Hong (2014, Sep). Single crystal Gd2O3

epitaxially on GaAs(111)A. CrystEngComm, 16, 8457-8462. (SCI, 4/23

Crystallography). MOST 102-2122-E-002-014. 本人為通訊作者.

43. Heike Riel, Lars-Erik Wernersson, Minghwei Hong, Jesús A. del Alamo (2014,

Aug). III-V Compound Semiconductor Transistors - From Planar to Nanowire

Structures. MRS Bulletin, 39 668-677. (SCI, 27/251 MATERIALS SCIENCE,

MULTIDISCIPLINARY). MOST 102-2622-E-002-014. 本人為通訊作者.

44. R. L. Chu, Y. C. Liu, W. C. Lee, T. D. Lin, M. L. Huang, T. W. Pi, J. Kwo, and

M. Hong (2014, May). Greatly improved interfacial passivation of in-situ high

dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer

on Ge(100). Appl. Phys. Lett., 104(20), 202102. (SCI, 20/136 Physics, Applied).

MOST 102-2112-M-002-022-MY3. 本人為通訊作者.

45. W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong (2014, Apr).

High k/InGaAs for ultimate CMOS - interfacial passivation, low ohmic contacts,

and device performance (Invited). ECS Transactions, 61(2), 113-124. 本人為通 訊作者.

46. T. W. Pi, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo, and M.

Hong, (2014, Jan). Synchrotron radiation photoemission study of interfacial

electronic structure of HfO2 on In0.53Ga0.47As(001)-4x2 from atomic layer

deposition. Appl. Phys. Lett., 104(4), 042904. (SCI, 20/136 Physics, Applied).

MOST 102-2112-M-002-022-MY3. 本人為通訊作者.

研討會論文

1. HW Wan, YJ Hong, LB Young, M Hong, J Kwo (2019, Mar). Fundamental

Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High

Thermal Stability. 2019 IEEE International Reliability Physics Symposium

(IRPS). 本人為通訊作者.

2. HW Wan, YJ Hong, YT Cheng, M Hong (2019, Mar). BTI Characterization of

MBE Si-capped Ge gate stack and defect reduction via forming gas annealing.

2019 IEEE International Reliability Physics Symposium (IRPS). 本人為通訊作 者.

3. M. Hong, Y. H. Lin, H. W. Wan, W. S. Chen, Y. T. Cheng, C.-P. Cheng, T. W. Pi,

and J. Kwo (2018, Oct). Interfacial perfection for pushing InGaAs and Ge MOS

device limits. 2018 IEEE 14th International Conference on Solid-State and

Integrated-Circuit Technology (ICSICT-2018), Qingdao, China. 本人為第一作 者、通訊作者.

4. C. C. Chen, K. H. M. Chen, H. Y. Lin, C. N. Wu, C. C. Tseng, Y. T. Fanchiang,

M. X. Guo, S. R. Yang, J. S. Wei, C. K. Cheng, C. H. Hsu, M. Hong, and J. Kwo

(2018, Sep). Attainment of high quality topological insulator Bi2Se3 thin films

grown on rare earth iron garnets. 20th International Conference on Molecular

Beam Epitaxy, Shanghai, China. 本人為通訊作者.

5. C. K. Cheng (鄭兆凱), C. C. Tseng (曾俊智), C. N. Wu (巫啟男), K. Y. Lin (林

耕雍), S. L. Yeh (葉松霖), Y. T. Fanchiang (范姜宇廷), C. H. Hsu (徐嘉鴻), J.

Kwo (郭瑞年), and M. Hong (洪銘輝) (2018, Sep). Stress-induced

perpendicular magnetic anisotropy in single crystal TmIG films. the 24th Users'

Meeting and Workshops, National Synchrotron Radiation Research Center,

Hsinchu, Taiwan. 本人為通訊作者.

6. H. W. Wan, W. S. Chen, L. B. Young, Y. H. Lin, T. W. Pi*, J. Kwo*, and M.

Hong* (2018, Sep). Interfacial anchoring of oxides on pristine GaAs for

achieving low Dit and high temperature thermal stability. 20th International

Conference on Molecular Beam Epitaxy, Shanghai, China. 本人為通訊作者.

7. K. H. M. Chen, H. Y. Lin, C. K. Cheng, K. Y. Lin, J. S. Wei, S. W. Huang, S. R.

Yang, Y. C. Liu, C. M. Cheng, C. H. Hsu, M. Hong, and J. Kwo (2018, Sep).

High quality topological material α-Sn thin film on InSb(001). 20th International

Conference on Molecular Beam Epitaxy, Shanghai, China. 本人為通訊作者.

8. L. B. Young (楊博宇), C. K. Cheng (鄭兆凱), K. Y. Lin (林耕雍), Y. H. Lin (林

延勳), H. W. Wan (萬獻文), R. F. Cai (蔡任豐), S. C. Lo (羅聖全), M. Y. Li (李

美儀), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞年), and M. Hong (洪銘輝) (2018,

Sep). Single-crystal ternary perovskite YAlO3 grown on GaAs and GaN:

overcoming a large lattice mismatch via a Y2O3 template. the 24th Users'

Meeting and Workshops, National Synchrotron Radiation Research Center,

Hsinchu, Taiwan. 本人為通訊作者.

9. M. Hong*, J. Kwo*, K. H. M. Chen, Y. T. Fanchiang, Y. H. Lin, H. W. Wan, K.

Y. Lin, W. S. Chen, Y. T. Cheng, L. B. Young, C. C. Chen, T. W. Pi, and C.-P.

Cheng (2018, Sep). MBE and multiple functions in-situ integrated via ultra-high

vacuum. 20th International Conference on Molecular Beam Epitaxy, Shanghai,

China. 本人為第一作者、通訊作者.

10. Shang-Fan Lee, YT Fanchiang, Minghwei Hong, J Kwo (2018, Sep). Exchange

coupling and magnetic proximity effect probed by ferromagnetic resonance in

topological insulator/ferromagnet bilayers (Conference Presentation). Spintronics

XI.

11. W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊博宇), Y. T. Cheng (鄭

伊婷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), C.-P.

Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)

(2018, Sep). ALD-Y2O3 on GaAs(001)-4×6 - an in-situ atomic-scale study of

growth mechanism using synchrotron radiation photoemission. the 24th Users'

Meeting and Workshops, National Synchrotron Radiation Research Center,

Hsinchu, Taiwan. 本人為通訊作者.

12. W. S. Chen, K. Y. Lin, Y. H. Lin, H. W. Wan, T. W. Pi*, J. Kwo*, and M. Hong*

(2018, Sep). Initial growth mechanism of MBE oxides on (In)GaAs investigated

by in-situ synchrotron radiation photoemission. 20th International Conference on

Molecular Beam Epitaxy, Shanghai, China. 本人為通訊作者.

13. Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), H. W. Wan (萬

獻文), K. Y. Lin (林耕雍), C.-P. Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭

瑞年), and M. Hong(洪銘輝) (2018, Sep). A unique surface electronic structure

of epi Ge(001)-2x1. the 24th Users' Meeting and Workshops, National

Synchrotron Radiation Research Center , Hsinchu, Taiwan. 本人為通訊作者.

14. C.-P. Cheng, W. S. Chen, Y. T. Cheng, L. B. Young, H. W. Wan, C. Y. Yang, K. Y.

Lin, T. W. Pi*, J. Kwo*, and M. Hong* (2018, Jul). Growth Mechanism of Highk Y2O3 on GaAs(001)-4×6 using in-situ Cycle-by-Cycle ALD and Synchrotron

Radiation Photoelectron Spectroscopy. 18th Intl. Conf. on Atomic Layer

Deposition, Incheon, South Korea. 本人為通訊作者.

15. L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo,

M. Y. Li, C. H. Hsu*, J. Kwo*, and M. Hong* (2018, Jul). Single-crystal Ternary

Perovskite YAlO3 Epitaxial Growth on GaAs and GaN via Y2O3 Template:

Overcoming a Large Film/Substrate Lattice Mismatch. 18th Intl. Conf. on

Atomic Layer Deposition, Incheon, South Korea. 本人為通訊作者.

16. S. R. Yang, C. C. Chen, C. C. Tseng, Y. T. Fanchiang, K. M. H. Chen, C. N. Wu,

C. K. Cheng, M. Hong*, and J. Kwo* (2018, Jul). Magnetic proximity effect

induced negative magnetoresistance in Bi2Se3/thulium iron garnet

heterostructures. the 23rd International Colloquium on Magnetic Films and

Surfaces (ICMFS-2018), UC Santa Cruz, CA. 本人為通訊作者.

17. Y. C. Liu, C. C. Chen, S. R. Young, L. J. Chang, S. F. Lee*, M. Hong* and J.

Kwo* (2018, Jul). Spin-orbit torque ferromagnetic resonance in transferredtopological insulator/normal metal/ferromagnetic metal heterostructure. 21st

International Conference on Magnetism, , San Francisco, CA. . 本人為通訊作 者.

18. Y. C. Liu, Y. T. Fanchiang, C. C. Tseng, C. C. Chen, J. G. Lin*, S. F. Lee*, M.

Hong*, and J. Kwo* (2018, Jul). Spin transport and spin-to-charge current

conversion in Bi2Se3/Au-based heterostructure. the 23rd International

Colloquium on Magnetic Films and Surfaces (ICMFS-2018) , UC Santa Cruz,

CA. 本人為通訊作者.

19. Y. T. Fanchiang, C. C. Tseng, Y. C. Liu, C. C. Chen, J. G. Lin*, S. F. Lee*, M.

Hong*, and J. Kwo* (2018, Jul). Spin transport and spin-to-charge current

conversion in Bi2Se3/Au heterostructure. 21st International Conference on

Magnetism, San Francisco, CA.. 本人為通訊作者.

20. C. C. Tseng, Y. C. Liu, C. C. Chen, S. R. Yang, Y. T. Fanchiang, C. K. Cheng, S.

F. Lee, J. G. Lin, M. Hong and J. Kwo (2018, May). Spin pumping in transferred

topological insulator on ferrimagnetic insulator and metal/ferrimagnetic

insulator. APS March meeting, Los Angeles, USA. 本人為通訊作者.

21. S. R. Yang, K. H. M. Chen, C. C. Chen, C. N. Wu, C. C. Tseng, C. K. Cheng, M.

Hong*, and J. Kwo* (2018, Mar). Time Reversal Symmetry Breaking in

Topological Insulator/Magnetic Insulator Heterostructures Revealed by the

Negative Magnetoresistance. APS March meeting, Los Angeles, USA. 本人為通 訊作者.

22. C. C. Chen, K. H. M. Chen, H. Y. Lin, C. N. Wu, C. C. Tseng, M. X. Guo, S. R.

Yang, J. S. Wei, C. K. Cheng, Y. T. Fanchiang, C. H. Hsu, M. Hong, and J. Kwo

(2018, Jan). The attainment of high quality topological insulator Bi2Se3 thin

films grown on ferromagnetic insulator garnets. 中華民國物理年會, National

Taiwan University, Taipei. 本人為通訊作者.

23. C. C. Tseng, Y. C. Liu, C. C. Chen, S. R. Yang, Y. T. Fanchiang, C. K. Cheng, S.

F. Lee, J. G. Lin, M. Hong and J. Kwo (2018, Jan). Ferromagnetic resonance and

spin pumping in transferred topological insulator on ferrimagnetic insulator

heterostructures. 中華民國物理年會, National Taiwan University, Taipei. 本人 為通訊作者.

24. C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo,

C. H. Hsu, J. Kwo, and M. Hong (2018, Jan). Epitaxy of single-crystal hexagonal

perovskite YAlO3 on Y2O3/GaAs(111)A. 中華民國物理年會, National Taiwan

University, Taipei. 本人為通訊作者.

25. C. Y. Yang, H. W. Wan, Y. H. Lin, J. Kwo, M. Hong (2018, Jan). 1000°C

Thermal Stability and Low Trap Densities Achieved in HfO2/GaAs(001). 中華 民國物理年會, National Taiwan University, Taipei. 本人為通訊作者.

26. H. W. Wan, T. W. Chang, K. Y. Lin, L. B. Young, J. Kwo, M. Hong (2018, Jan).

Comparative Study of Trap Response Inside Conduction Band of GaAs

Passivated with High Dielectric Constant Oxides of Y2O3 and HfO2. 中華民國 物理年會, National Taiwan University, Taipei. 本人為通訊作者.

27. J. H. Huang, H. W. Wan , C. Y. Yang, W. S. Chen, C. K. Cheng, Y. H. Lin , J.

Kwo* , M. Hong* (2018, Jan). Low interfacial trap densities and high thermal

stability of Y2O3 on p-In0.1Ga0.9As. 中華民國物理年會, National Taiwan

University, Taipei. 本人為通訊作者.

28. J. S. Wei, S. R. Yang, K. H. Chen, C. C. Chen, Y. H. Lin, L. B. Young, K. Y. Lin,

T. W. Chang, M. Hong, and J. Kwo (2018, Jan). Demonstration of Large Field

Effect in Topological Insulator Based Top-gating Device. 中華民國物理年會,

National Taiwan University, Taipei. 本人為通訊作者.

29. K. H. M. Chen, H. Y. Lin, K. Y Lin, C. K. Cheng, S. W. Huang, J. S. Wei, S. R.

Yang, C. M. Cheng, C. H. Hsu, M. Hong, and J. Kwo, (2018, Jan). High quality

α-Sn thin film on InSb(001). 中華民國物理年會, National Taiwan University,

Taipei. 本人為通訊作者.

30. L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. Kwo, M. Hong

(2018, Jan). Epitaxial Growth of Y2O3-doped High-K Cubic HfO2 on GaAs

Utilizing ALD-HfO2/Y2O3 Super-Cycles. 中華民國物理年會, National Taiwan

University, Taipei. 本人為通訊作者.

31. S. R. Yang, K. H. M. Chen, C. C. Chen, C. N. Wu, C. C. Tseng, C. K. Cheng, M.

Hong*, and J. Kwo* (2018, Jan). Time Reversal Symmetry Breaking in

Topological Insulator/Magnetic Insulator Heterostructures Revealed by the

Negative Magnetoresistance. 中華民國物理年會, National Taiwan University,

Taipei. 本人為通訊作者.

32. Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, S. R.

Yang, C. N. Wu, S. F. Lee, M. Hong, and J. Kwo (2018, Jan). Topological

surface states mediated interfacial exchange coupling in Bi2Se3/YIG. 中華民國 物理年會, National Taiwan University, Taipei. 本人為通訊作者.

33. K. Y. Lin, T. W. Chang, H. W. Wan, Y. J. Hong, L. B. Young, J. Kwo*, M. Hong*

(2017, Dec). Temperature-dependent barrier heights measured in high-k/GaAs -

elucidating capacitance- voltage frequency dispersion for proper determination

of border traps. 48th Semiconductor Interface Specialists Conference (SISC) ,

San Diego, CA, USA. 本人為通訊作者.

34. T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong (2017, Dec). Detailed understanding

of the atomic-layer deposited dielectric oxides and III-V and Ge interfaces: A

synchrotron radiation photoemission study. 2017 Global Research Efforts on

Energy and Nanomaterials (GREEN 2017), Asia Pacific Society for Materials

Research, Taipei, Taiwan. 本人為通訊作者.

35. C. N. Wu, C. C. Tseng, S. R. Yang, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T.

Fanchiang, M. Hong* and J. Kwo* (2017, Nov). High-Quality Single-Crystal

Thulium Iron Garnet Films with Tunable Perpendicular Magnetic Anisotropy by

Off-Axis Sputtering. 62th MMM conference, Pittsburg. 本人為通訊作者.

36. H. W. Wan, T. W. Pi, J. Kwo, M. Hong (2017, Nov). Tailoring interfacial quality

of Ge MOS by in-situ deposited high-k dielectrics. Helmholtz-Zentrum DresdenRossendorf (HZDR), Germany. 本人為通訊作者.

37. M. Hong (2017, Nov). Scientific elegance of perfecting oxide/ and metal/InGaAs

interfaces in pushing high-performance devices. Colloquium, HelmholtzZentrum Dresden-Rossendorf (HZDR), Germany. 本人為第一作者、通訊作者.

38. Y. H. Lin, C.-P. Cheng, T. W. Pi, J. Kwo, and M. Hong (2017, Nov). ALDY2O3/GaAs(001) - interfacial electrical, thermal, and structural characteristics.

Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany. 本人為通訊作者.

39. Y. T. Fanchiang, K. H. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N. Wu, S.

F. Lee*, M. Hong*, and J. Kwo* (2017, Nov). Strongly exchange-coupled and

surface-state-modulated magnetization dynamics in Bi2Se3/YIG

heterostructures. 62th MMM conference, Pittsburg. 本人為通訊作者.

40. W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊博宇), Y. T. Cheng (鄭

伊婷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), C.-P.

Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)

(2017, Sep). Interface dipole of high-k Y2O3 on GaAs(001)-4×6 attained using

cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy. the

23rd Users' Meeting and Workshops, National Synchrotron Radiation Research

Center, Hsinchu, Taiwan. 本人為通訊作者.

41. Y. H. Lin, T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong (2017, Sep). Tailoring

oxide/high carrier mobility semiconductor interfaces-achieving scientific

elegance in pushing high-performance devices. 2017 Taiwan Oxide Forum,

National Chao-Tung Univ., Hsinchu, Taiwan. 本人為通訊作者.

42. Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊

博宇), Y. H. Lin (林延勳), H. W. Wan (萬獻文), T. W. Pi (皮敦文), C.-P. Cheng

(鄭秋平), J. Kwo (郭瑞年), and M. Hong (洪銘輝) (2017, Sep). Elucidation of

distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and

In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron

spectroscopy. the 23rd Users' Meeting and Workshops, National Synchrotron

Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.

43. J. Raynien Kwo, M. Hong, and S. F. Lee (2017, Jul). Spin transport in

topological insulator-based magnetic heterostructures. OCPA 9, Tsing Hua

University, Beijing, China. 本人為通訊作者.

44. K. Y. Lin, L. B. Young, C. K. Cheng, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, J.

Kwo, and M. Hong (2017, Jul). Great enhancement of dielectric constant via

high temperature annealing ALD bi-layered oxides. 17th Intl. Conf. on Atomic

Layer Deposition , Denver, Colorado, USA. 本人為通訊作者.

45. L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R. F. Cai,

S. C. Lo, C. H. Hsu, J. R. Kwo, and M. Hong (2017, Jul). Perfecting singlecrystal ternary perovskite YAlO3 epitaxial growth on GaAs(111)A utilizing

atomic layer deposited sub-nano-laminated Y2O3/Al2O3. 17th Intl. Conf. on

Atomic Layer Deposition, Denver, Colorado, USA. 本人為通訊作者.

46. L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. R. Kwo, and M.

Hong (2017, Jul). Atomic layer deposited single crystal high-k Y-doped cubic

HfO2 on GaAs(001) utilizing HfO2/Y2O3 super-cycles. 17th Intl. Conf. on

Atomic Layer Deposition, , Denver, Colorado, USA. 本人為通訊作者.

47. W. S. Chen, K. Y. Lin, L. B. Young, Y. T. Cheng, Y. H. Lin, H. W. Wan, C. Y.

Yang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong (2017, Jul). Interface dipole of

high-k Y2O3 on GaAs(001)-4x6 attained using cycle-by-cycle ALD and

synchrotron radiation photoelectron spectroscopy. 17th Intl. Conf. on Atomic

Layer Deposition, Denver, Colorado, USA. 本人為通訊作者.

48. Y. H. Lin, H. W. Wan, L. B. Young, C. K. Cheng, K. Y. Lin, Y. T. Cheng, W. S.

Chen, C. P. Cheng, T. W. Pi, J. R. Kwo, and M. Hong (2017, Jul). ALDY2O3/GaAs(001) having extremely high thermal stability at 900 °C and very

low interfacial trap densities - comparative studies with ALD Al2O3 and HfO2

gate dielectrics. 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado,

USA. 本人為通訊作者.

49. Y. T. Cheng, W. S. Chen, K. Y. Lin, L. B. Young, Y. H. Lin, H. W. Wan, C. P.

Cheng, T. W. Pi, J. R. Kwo, and M. Hong (2017, Jul). Elucidation of distinct

electric characteristics of ALD oxides on highly ordered GaAs(001) and

In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron

spectroscopy. 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado,

USA. 本人為通訊作者.

50. C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T.

Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong (2017, Jun).

Perfecting single-crystal growth of ternary hexagonal YAlO3 on Y2O3(111) and

GaAs(111)A via substrate induced epitaxy. 20th Conference on "Insulating Films

on Semiconductors" (INFOS), Potsdam, Germany. . 本人為通訊作者.

51. H. W. Wan, Y. H. Lin, K. Y. Lin, T. W. Chang, J. Kwo, M. Hong (2017, Jun).

Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001)

interface. 20th Conference on "Insulating Films on Semiconductors", Potsdam,

Germany. 本人為通訊作者.

52. J. Kwo, M. Hong, and S. F. Lee (2017, Jun). Topological insulator-based

magnetic hetero-structures. 9th International Conference on Materials for

Advanced Technologies, Suntec, Singapore. 本人為通訊作者.

53. K. Y. Lin, L. B. Young, C. K. Cheng, K. H. Chen, Y. H. Lin, H. W. Wan, R. F.

Cai, S. C. Lo, M. Y. Li, J. Kwo, M. Hong (2017, Jun). Enhancement of dielectric

constant using high-temperature mixed and sub-nano-laminated atomic layer

deposited Y2O3/Al2O3 on GaAs (001). 20th Conference on "Insulating Films on

Semiconductors", Potsdam, Germany. 本人為通訊作者.

54. M. Hong (2017, Jun). Perfecting hetero-Interfaces of high-k and metal/high

mobility semiconductors in pushing device performances. TSMC Technical

Forum, Taiwan. 本人為第一作者、通訊作者.

55. T. W. Chang, K. Y. Lin, Y. H. Lin, L. B. Young, J. Kwo, M. Hong (2017, Jun).

Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via

electrical responses - a comparative study. 20th Conference on "Insulating Films

on Semiconductors", Potsdam, Germany. . 本人為通訊作者.

56. C. N. Wu, Y. C. Liu, H. Y. Lin, K. H. M. Chen, S. R. Yang, C. C. Tseng, J. S.

Wei, C. C. Chen, S. W. Huang, S. L. Yeh, Y. H. Yen, C. W. Chao, L. U. Liang,

Germar Hoffmann, Y. T. Fanchiang, Y. H. Lin, Wesley Lin, C. K. Cheng, C. M.

Cheng, C. H. Hsu, T. R. Chang, S. F. Lee, J. G. Lin, M. Hong, and J. Raynien

Kwo (2017, May). Electronic property and spin transport of topological

insulator-based heterostructures. TCECM, Miaoli, Taiwan. 本人為通訊作者.

57. C. N. Wu, C. C. Tseng, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M.

Hong and J. Kwo (2017, Mar). High quality TmIG films with perpendicular

magnetic anisotropy grown by sputtering. APS March Meeting, New Orleans,

LA. 本人為通訊作者.

58. T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong (2017, Mar). Interfacial electronic

characterization of oxides/metals on high mobility semiconductors using in-situ

synchrotron radiation photoemission and the correlation with the interfacial

electric properties. The 2017 International Conference on Frontiers of

Characterization and Metrology for Nanoelectronics (FCMN), the Monterey

Marriott in Monterey, CA. 本人為通訊作者.

59. Y. T. Fanchiang, H. Y. Lin, C. C. Tseng, K. S. Chen, C. N. Wu, C. K. Cheng, S. F.

Lee, J. G. Lin, M. Hong and J. Kwo (2017, Mar). Ferromagnetic resonance study

of interlayer exchange coupling in topological insulator/ferrimagnetic insulator

heterostructure. APS March Meeting, New Orleans, LA. 本人為通訊作者.

60. C. C. Chen, K. H. Chen, H. Y. Lin, S. R. Yang, C. K. Cheng, C. M. Cheng, M.

Hong, and J. Kwo (2017, Jan). Topological Insulator thin films grown on αAl2O3 stepped terraces by molecular beam epitaxy. 中華民國物理年會,

Tamkang University, Taipei. 本人為通訊作者.

61. C. C. Tseng, C. N. Wu, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M.

Hong and J. Kwo (2017, Jan). High quality TmIG films with tunable

perpendicular magnetic anisotropy grown by sputtering. 中華民國物理年會,

Tamkang University, Taipei. 本人為通訊作者.

62. H. Y. Lin, K. H. Chen, S. W. Huang, C. C. Chen, J. W. Liu, W. C. Fan, W. C.

Chou, C. M. Cheng, M. Hong and J. Raynien Kwo (2017, Jan). Investigation of

the electronic structure of stanene on Bi2Te3 by ARPES. 中華民國物理年會,

Tamkang University, Taipei. 本人為通訊作者.

63. S. W. Huang, H. Y. Lin, S. R. Yang, K. H. Chen, C. K. Cheng, M. Hong, J.

Raynien Kwo (2017, Jan). Epitaxial Growth of Topological Insulator Bi2Te3

Thin Films on BaF2 (111) Substrates by MBE. 中華民國物理年會, Tamkang

University, Taipei. 本人為通訊作者.

64. Y. T. Fanchiang, H. Y. Lin, C. C. Tseng, K. S. Chen, C. N. Wu, C. K. Cheng, S. F.

Lee, J. G. Lin, M. Hong and J. Kwo (2017, Jan). Ferromagnetic resonance study

of interfacial exchange coupling in topological insulator/ferrimagnetic insulator

heterostructure. 中華民國物理年會, Tamkang University, Taipei. 本人為通訊作 者.

65. Yi-Ting Cheng, Wan-Sin Chen, Yen-Hsun Lin, Hsien-Wen Wan, Keng-Yung Lin,

Sin Wang, Chiu-Ping Cheng, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong (2017,

Jan). Synchrotron Radiation Photoemission Study Of Single Phase Ge (001)-2X1

Surface. 中華民國物理年會, Tamkang University, Taipei. 本人為通訊作者.

66. C. P. Cheng, W. S. Chen, K. Y. Lin, G. J. Wei, Y. T. Cheng, Y. H. Lin, H. W. Wan,

T. W. Pi, R. T. Tung, J. Kwo, and M. Hong (2016, Dec). Determination of

Schottky barrier height prior to metal formation. 47th IEEE Semiconductor

Interface Specialists Conference, San Diego, CA, USA. 本人為通訊作者.

67. H. W. Wan, K. Y. Lin, M. H. Chen, L. B. Young, Y. H. Lin, Y. C. Chang, T. D.

Lin, Y. T. Cheng, W. S. Chen, S. H. Chen, T. W. Pi, J. Kwo, and M. Hong (2016,

Dec). ALD Oxides In-situ on InGaAs - Perfecting Interfacial Electronic

Structures in Pushing High-Performance Inversion-Channel MOSFETs. 47th

IEEE Semiconductor Interface Specialists Conference, San Diego, CA, USA. 本

人為通訊作者.

68. W. S. Chen, Y. H. Lin, Y. T. Cheng, K. Y. Lin, T. W. Chang, H. W. Wan, C. P.

Cheng, T. W. Pi, J. Kwo, and M. Hong (2016, Dec). Relevance of GaAs(001)

surface electronic structure for high frequency dispersion on n-type accumulation

capacitance. 47th IEEE Semiconductor Interface Specialists Conference, San

Diego, CA, USA. 本人為通訊作者.

69. Y. H. Lin, Y. T. Cheng, W. S. Chen, K. Y. Lin, H. W. Wan, C. P. Cheng, T. W. Pi,

J. Kwo, and M. Hong (2016, Dec). Rebooting the interfacial knowledge of highk dielectrics on In0.53Ga0.47As(001)-4x2. 47th IEEE Semiconductor Interface

Specialists Conference, San Diego, CA, USA. 本人為通訊作者.

70. Y. H. Lin, Y. T. Cheng, W. S. Chen, K. Y. Lin, H. W. Wan, C. P. Cheng, T. W. Pi,

J. Kwo, and M. Hong (2016, Dec). Rebooting the interfacial knowledge of highk dielectrics on In0.53Ga0.47As(001)-4x2. 47th IEEE Semiconductor Interface

Specialists Conference, San Diego, CA, USA. 本人為通訊作者.

71. Y. T. Cheng, W. S. Chen, Y. H. Lin, H. W. Wan, K. Y. Lin, S. Wang, C. P. Cheng,

T. W. Pi, J. Kwo, and M. Hong (2016, Dec). Epi Ge(001)-2×1 surface aimed for

high-κ deposition: An electronic- structure study. 47th IEEE Semiconductor

Interface Specialists Conference, San Diego, CA, USA. 本人為通訊作者.

72. M. Hong, K. Y. Lin, H. W. Wan, L. B. Young, C. K. Cheng, Y. H. Lin, Y. T.

Cheng, W. S. Chen, C. H. Hsu, T. W. Pi, and J. Kwo (2016, Oct). (Keynote) ALD

oxides in-situ on semiconductors for perfecting interfaces in pushing highperformance MOSFETs and attaining single-crystal complex materials. The

3rd International Conference on ALD Applications & 2016

China ALD Conference, Suzhou, China. 本人為第一作者、通訊作者.

73. Bo-Yi Chen, Gung-Chian Yin, Shi-Hung Chang, Huang-Yeh Chen, Chien-Yu

Lee, Bi-Hsuan Lin, Shao-Chin Tseng, Jian-Xing Wu, Minghwei Hong, J.

Raynien Kwo, and Mau-Tsu Tang (2016, Sep). The Precision Adjustment Holder

for Montel Mirrors. 9th edition of the Mechanical Engineering Design of

Synchrotron Radiation Equipment and Instrumentation (MEDSI) conference,

Barcelona, Spain. 本人為通訊作者.

74. C. K. Cheng (鄭兆凱), H. Y. Lin (林孝于), K. H. Chen (陳可璇), X. Q. Zhang

(張鋅權), Y. H. Lee (李奕賢), C. H. Hsu (徐嘉鴻), M. Hong (洪銘輝), and J.

Kwo (郭瑞年) (2016, Sep). Structural analysis of Bi2Se3 thin films on various

substrates. the 22nd Users'Meeting and Workshops, National Synchrotron

Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.

75. C. K. Cheng, H. Y. Lin, K. H. Chen, X. Q. Zhang, Y. H. Lee, C. H. Hsu, M.

Hong, and J. Kwo (2016, Sep). Structural analysis of Bi2Se3 thin films on

various substrates. the 22nd Users' Meeting and Workshops, National

Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.

76. G. J. Lu (盧冠傑), C. K. Cheng (鄭兆凱), L. B. Young (楊博宇), K. Y. Lin (林耕

雍), C. N. Wu (巫啟男), C. H. Hsu (徐嘉鴻), B. M. Cheng (鄭炳銘), J. Kwo (郭

瑞年), and M. Hong (洪銘輝) (2016, Sep). Phase formation and

photoluminescence of single crystal Y3Al5O12 garnet on Gd3Ga5O12 garnet

substrate via a novel nano laminated-ALD. the 22nd Users' Meeting and

Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, . 本人為通訊作者.

77. G. J. Lu, C. K. Cheng, L. B. Young, K.Y. Lin, C.N. Wu, C.H. Hsu, B.M. Cheng,

J. Kwo, and M. Hong (2016, Sep). Phase formation and photoluminescence of

single crystal Y3Al5O12 garnet on Gd3Ga5O12 garnet substrate via a novel

nano laminated-ALD. the 22nd Users' Meeting and Workshops, National

Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.

78. H. W. Wan, K. Y. Lin, Y. K. Su, T. W. Chang, Y. H. Lin, W.C. Lee, Y. T.

Fanchiang, C. K. Cheng, C. H. Hsu, T. W. Pi, J. R. Kwo, and M. Hong (2016,

Sep). GaAs Metal-Oxide-Semiconductor Push with Molecular Beam Epitaxy

Y2O3 - in comparison with atomic layer deposited Al2O3. 19th International

Conference on Molecular Beam Epitaxy, Montpellier, France. 本人為通訊作者.

Outstanding Student MBE Award The Outstanding Student MBE Award is based

on the quality of the student's work and the excellence of their presentation and

includes students who either present their work orally or as a poster.

Presentations are judged at the conference and the best two papers are honored.

The Outstanding MBE Awrads have been awarded to Candice Thomas, from

CEA Grenoble, and to Hsien-Wen Wan from National Taiwan University..

79. L. B. Young (楊博宇), G. J. Lu (盧冠傑), C. K. Cheng (鄭兆凱), K. Y. Lin (林耕 雍), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞 年), and M. Hong (洪銘輝) (2016, Sep). Formation of yttrium aluminum

perovskite on GaAs with ALD-Y2O3/Al2O3 nano-multilayer. the 22nd Users'

Meeting and Workshops, National Synchrotron Radiation Research Center,

Hsinchu, Taiwan. 本人為通訊作者.

80. L. B. Young, G. J. Lu, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, C. H. Hsu,

J. Kwo, and M. Hong (2016, Sep). Formation of Yttrium Aluminum Perovskite

on GaAs with ALD-Y2O3/Al2O3 Nano-multilayer. the 22nd Users' Meeting and

Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.

81. M. Hong, P. Chang, T. D. Lin, H. W. Wan, Y. H. Chang, W.C. Lee, T. W. Pi, J.

Kwo (2016, Sep). Effective Surface Passivation of In0.53Ga0.47As (001) using

MBE- and ALD-HfO2. 19th International Conference on Molecular Beam

Epitaxy, Montpellier, France. 本人為第一作者、通訊作者.

82. W. S. Chen (陳婉馨), Y. T. Cheng (鄭伊婷), Y. H. Lin (林延勳), K. Y. Lin (林耕

雍), T. W. Pi (皮敦文), J. Kwo (郭瑞年), M. Hong (洪銘輝), and C.-P. Cheng

(鄭秋平) (2016, Sep). Synchrotron-radiation photoemission study of interfacial

electronic structure of Ag on GaAs(001)-4x6. the 22nd Users' Meeting and

Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.

83. Y. H. Lin, K. Y. Lin, W. J. Hsueh, K. H. Chen, L. B. Young, T. W. Chang, H. W.

Wan, J. I. Chyi, J. Kwo, M. Hong (2016, Sep). Comparison of Molecular Beam

Epitaxy and Atomic Layer Deposited high-k oxide/III-V interface -

Y2O3/GaSb(001). 19th International Conference on Molecular Beam Epitaxy,

Montpellier, France. 本人為通訊作者.

84. Y. T. Cheng (鄭伊婷), H. Wang (王馨), W. S. Chen (陳婉馨), C. H. Wei (魏竟軒), 

Y. H. Lin (林延勳), T. W. Pi (皮敦文), J. Kwo (郭瑞年), M. Hong (洪銘輝),

and C.-P. Cheng (鄭秋平) (2016, Sep). Interfacial electronic structure of gold on

p-In0.53Ga0.47As(001)-4×2: A Schottky barrier height study. the 22nd Users'

Meeting and Workshops, National Synchrotron Radiation Research Center,

Hsinchu, Taiwan. 本人為通訊作者.

85. H. Y. Lin, K. H. Chen, S. R. Yang, S. W. Huang, C. C. Chen, Y. H. Yen, C. K.

Cheng, X. Q. Zhang, Y. H. Lee, G. Hoffmann, S. C. Tseng, C. M. Cheng, C. H.

Hsu, M. Hong, J. Raynien Kwo (2016, Aug). High quality topological insulator

thin films and novel two dimensional materials grown by MBE. Max PlacnkPostech-Hsinchu Workshop on complex phase materials, Dresden, Germany. 本

人為通訊作者.

86. K. Y. Lin, Y. H. Lin, H. W. Wan, M. Hong, C. P. Cheng, T. W. Pi, W. S. Chen, Y.

T. Cheng, J. Kwo (2016, Aug). Synchrotron radiation photoemission study of

high dielectrics on III-Vs and energy barrier for metal-semiconductor 

contacts. Max Placnk-Postech-Hsinchu Workshop on complex phase materials,

Dresden, Germany. 本人為通訊作者.

87. M. Hong, Y. H. Lin, K. Y. Lin, Y. T. Fanchiang, C. K. Cheng, T. W. Chang, L. B.

Young, H. W. Wan, M. H. Chen, J. Liu, J. Kwo, C. N. Wu, Y. C. Liu, H. Y. Lin,

K. H. M. Chen, T. W. Pi, C. H. Hsu, C. P. Cheng, and S. H. Chen (2016, Aug).

(Invited talk) Pushing the ultimate CMOS and beyond via perfecting high k- and

metal-semiconductor hetero-interfaces. Max Planck-Postech-Hsinchu Workshop

on complex phase materials, Dresden, Germany. 本人為第一作者、通訊作者.

88. Keng-Yung Lin, Tsung-Wen Chang, Chao-Kai Cheng, Yen-Hsun Lin, Lawrence

Young, Chun-Ting Wu, Chien-Hua Fu, Kuan-Hsiung Chen, Szu-Hung Chen,

Chia-Hung Hsu, J. Raynien Kwo, Minghwei Hong (2016, Jul). Low interfacial

trap densities in single crystal atomic-layer-deposited Y2O3 on GaAs(001).

American Vacuum Society - 16th International Conference on Atomic Layer

Deposition. 本人為通訊作者.

89. L. B. Young, G. J. Lu, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, C. H. Hsu,

J. Kwo, and M. Hong (2016, Jul). Formation of Yttrium Aluminum Perovskite on

GaAs and GaN utilizing ALD-Y2O3/Al2O3 nano-multilayer. American Vacuum

Society - 16th International Conference on Atomic Layer Deposition. 本人為通 訊作者.

90. M. Hong, Y. H. Lin, K. Y. Lin, Y. T. Fanchiang, J. Kwo, C. N. Wu, Y. C. Liu, H.

Y. Lin, T. W. Pi, C. P. Cheng, and S. H. Chen (2016, Jul). (Keynote lecture)

Perfecting Hetero-Interfaces for pushing the ultimate CMOS and beyond.

International Union of Materials Research Societies (IUMRS) - International

Conference on Electronic Materials (ICEM), Singapore. 本人為第一作者、通訊 作者.

91. T. W. Pi, C. P. Cheng, W. S. Chen, K. Y. Lin, S. Wang, Y. H. Lin, Y. T. Cheng, J.

R. Kwo, and M. Hong (2016, Jul). High-k oxides on pristine singe crystal III-V

surfaces studied by synchrotron radiation photoemission. International Union of

Materials Research Societies (IUMRS) - International Conference on Electronic

Materials (ICEM), Singapore. 本人為通訊作者.

92. T. W. Pi, K. Y. Lin, T. D. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, C. P. Cheng, J.

Kwo, M. Hong (2016, Jul). Synchrotron radiation photoemission study of

dielectric oxides grown by atomic layer deposition (ALD) on single-crystal

(In)GaAs surfaces. American Vacuum Society - 16th International

Conference on Atomic Layer Deposition, Dublin, Ireland. 本人為通訊作者.

93. T.-W. Pi, T. D. Lin, K. Y. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, J. Kwo, and

M. Hong (2016, Jun). Dielectric oxides grown by atomic layer deposition (ALD)

on single-crystal (In)GaAs surfaces studied by synchrotron radiation

photoemission. 2016 Compound Semiconductor Week, Toyama International

Conference Center, Toyama, Japan. 本人為通訊作者.

94. W.J. Hsueh, P.C. Chiu, M. Hong, J.I. Chyi (2016, Jun). Suppressing Ge diffusion

by GaAsSb for molecular beam epitaxy of InGaAs on Ge. 2016 Compound

Semiconductor Week, Toyama International Conference Center, Toyama, Japan. 本人為通訊作者.

95. M. H. Chen, J. Liu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, S.

H. Chen, J. Kwo, and M. Hong (2016, May). High-performance self-aligned

inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effecttransistors by in-situ atomic-layer-deposited Al2O3/Y2O3 gand TaN/TiN gate

stacks. Symposium on Nano Device Technology (SNDT), 奈米元件技術研討 會. 本人為通訊作者.

96. T. W. Chang, K. Y. Lin, C. H. Fu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B.

Young, G. J. Lu, J. Kwo, and M. Hong (2016, May). Effective surface

passivation of GaAs(001) using in-situ atomic-layer-deposited Y2O3.

Symposium on Nano Device Technology (SNDT), 奈米元件技術研討會. 本人 為通訊作者.

97. K. H. Chen, H. Y. Lin, C. Y. Wang, S. R. Yang, J. Kwo, C. K. Cheng, M. Hong,

X. Q. Zhang and Y. H. Lee (2016, Mar). High quality topological insulator thin

films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer.

2016 American Physical Society (APS) March meeting, Baltimore, MD, USA.

98. M. Hong, Y. H. Lin, K. Y. Lin, J. Kwo, T. W. Pi, J. I. Chyi, and S. H. Chen (2016,

Mar). (Invited talk) Perfecting high k/semiconductor interface for high performance n- and p-MOSFETs with common gate dielectrics using a CMOS

compatible process. 2016 EMN Meeting on Field-Effect Transistors, Kaohsiung,

Taiwan. 本人為第一作者、通訊作者.

99. Y. T. Fanchiang, C. K. Cheng, M. Hong, H. Y. Lin, K. H. Chen, S. R. Yang, C. N.

Wu, J. Kwo, and S. F. Lee (2016, Mar). Detection of topological surface states

by spin pumping at room temperature. 2016 American Physical Society (APS)

March meeting, Baltimore, MD, USA.

100. C. K. Cheng, H. Y. Lin, K. H. Chen, X. Q. Zhang, Y. H. Lee, C. H. Hsu, J. Kwo,

and M. Hong (2016, Jan). Structural analysis of Bi2Se3 thin films on various

substrates. Annual Meeting of the Physical Society of the Republic of China,

2016. 本人為通訊作者.

101. G. J. Lu, C. K. Cheng, L. B. Young, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo,

and M. Hong (2016, Jan). Mechanism of forming perovskite and garnet

structures using atomic-layer deposited Y2O3-Al2O3. Annual Meeting of the

Physical Society of the Republic of China, 2016. 本人為通訊作者.

102. H. W. Wan, Y. C. Chang, T. D. Lin, M. H. Chen, K. Y. Lin, S. H. Chen, T. W. Pi,

J. Kwo, M. Hong (2016, Jan). In-situ Atomic-Layer-Deposited Al2O3 on

In0.53Ga0.47As - Push of High Performance Inversion-Channel MOSFET.

Annual Meeting of the Physical Society of the Republic of China, 2016. 本人為 通訊作者.

103. K. Y. Lin, C. H. Fu, K. H. Chen, Y. H. Lin, L. B. Young, J. Kwo, and M. Hong

(2016, Jan). Effect of Ultra-high Vacuum Annealing on ALD-Y2O3/GaAs

Heterostructure Studied by in-situ X-ray Photoelectron Spectroscopy. Annual

Meeting of the Physical Society of the Republic of China, 2016. 本人為通訊作 者.

104. L. B. Young, C. K. Cheng, G. J. Lu, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo, M.

Hong (2016, Jan). Formation of single-crystal hexagonal Yttrium Aluminum

Perovskite on GaAs(111)A utilizing ALD-Y2O3/Al2O3 multilayer with postdeposition annealing. Annual Meeting of the Physical Society of the Republic of

China, 2016. 本人為通訊作者.

105. M. H. Chen, J. Liu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, J.

Kwo, and M. Hong (2016, Jan). High-performance self-aligned inversionchannel In0.53Ga0.47As metal-oxide semiconductor field-effect- transistors by

in-situ atomic-layer-deposited Y2O3. Annual Meeting of the Physical Society of

the Republic of China, 2016. 本人為通訊作者.

106. T. W. Chang, K. Y. Lin, C. H. Fu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young,

G. J. Lu, C. T. Wu, J. Kwo, and M. Hong (2016, Jan). Surface passivation of

GaAs(001) using atomic-layer-deposition Y2O3 and ultra-high vacuum

annealing. Annual Meeting of the Physical Society of the Republic of China,

2016. 本人為通訊作者.

107. Y. C. Liu, C. N. Wu, Y. T. Fan-Chiang, L. C. Chang, S. F. Lee, M. Hong, and J.

Kwo (2016, Jan). Detection of current induced spin torque ferromagnetic

resonance in ferromagnetic insulator/heavy metal heterostructures. 2016 Joint

MMM-Intermag Conference, San Diego, California, USA.

108. Y. H. Lin, K. Y. Lin, L. B. Young, K. H. Chen, C. H. Fu, W. J. Hsueh, G. J.

Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong (2016, Jan). Atomic Layer

Deposited Rare Earth Oxide Y O on n-GaSb(001). Annual Meeting of the ₂ ₃

Physical Society of the Republic of China, 2016. 本人為通訊作者.

109. Yi-Ting Cheng, Wan-Sin Chen, Guo-Jhen Wei, Hsin Wang, Ching-Hsuan Wei,

Yu-Cheng Lin, Yen-Hsun Lin, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong, and

Chiu-Ping Cheng (2016, Jan). Interfacial Electronic Structure of Al on pGaAs(001) : A Synchrotron-Radiation Photoemission Study of Schottky Barrier

Height. Annual Meeting of the Physical Society of the Republic of China, 2016. 本人為通訊作者.

110. K. Y. Lin, Y. H. Lin, K. H. Chen, L. B. Young, C. H. Fu, C. P. Cheng, T. W. Pi, J.

Kwo, and M. Hong (2015, Dec). Enhanced ALD-Y2O3 Thin Film Quality and

Interface Cleansing Achieved by UHV Annealing for III-V Passivation. 46th

IEEE Semiconductor Interface Specialists Conference (SISC), Key Bridge

Marriott, Arlington, VA. 本人為通訊作者.

111. T. W. Pi, C. P. Cheng, Y. T. Cheng, W. S. Chen, S. Wang, G. J. Wei, C. H. Wei, Y.

C. Lin, Y. H. Chang, Y. H. Lin, J. Kwo, and M. Hong (2015, Dec). Interfacial

electronic structure of aluminum on GaAs(001)-4x6: Re-examination of the

interface with ALD tri-methylaluminum and water. The 46th IEEE

Semiconductor Interface Specialists Conference (SISC), Key Bridge Marriott,

Arlington, VA.

112. W. S. Chen, C. P. Cheng, G. J. Wei, Y. T. Cheng, C. H. Wei, Y. C. Lin, Y. H. Lin,

K. Y. Lin, T. W. Pi, J. Kwo, and M. Hong (2015, Dec). Interfacial electronic

structure of the noble metals on 2-GaAs(001)-2x4 surface. 46th IEEE 

Semiconductor Interface Specialists Conference (SISC), Key Bridge Marriott,

Arlington, VA. 本人為通訊作者.

113. M. Hong, J. Kwo, T. W. Pi, J. I. Chyi, S. H. Chen, and G. J. Brown (2015, Oct).

(Invited talk) Perfecting high k/semiconductor interface leading to high

performance n- and p-MOSFETs with a common high k gate dielectric using a

CMOS compatible process. Joint US- Korea NBIT-Taiwan Nanoscience Program

Review and Technical Exchange, Seoul, South Korea. 本人為第一作者、通訊作 者.

114. C. H. Fu, Y. H. Lin, W. C. Lee, T. D. Lin, R. L. Chu, L. K. Chu, P. Chang, M. H.

Chen, W. J. Hsueh, S. H. Chen, G. J. Brown, J. I. Chyi, J. Kwo, and M. Hong

(2015, Jun). Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge

MOSFETs with a common high gate dielectric using a CMOS compatible 

process. 19th Conference on "Insulating Films on Semiconductors", Udine, Italy. 本人為通訊作者.

115. S. Y. Wu, K. H. Chen, Y. H. Lin, C. K. Cheng, C. H. Hsu, J. Kwo, and M. Hong

(2015, Jun). Single-crystal atomic layer deposited Y2O3 on GaAs(001) - growth,

structural, and electrical characterization. 19th Conference on "Insulating Films

on Semiconductors", Udine, Italy. 本人為通訊作者.

116. C. Y. Wang, H. Y. Lin, Y. H. Lin, K. H. M. Chen, K. H. Chen, S. Z. Yang, B. Y.

Yang, Z. J. Peng, C. H. Hsu, S. F. Lee, M. Hong, J. Kwo (2015, Mar).

Demonstration of large field effect in topological insulator films via a high-κ

back gate. American Physical Society (APS) March meeting, San Antonio,

Texas, USA.

117. H.Y. Lin, C. Y. Wang,, K. H. M. Chen, Y. H. Lin, K. H. Chen, B. Y. Yang, M.

Hong, and J. Kwo (2015, Mar). Investigation of the transport properties of

Bi2Se3 films grown on various substrates. American Physical Society (APS)

March meeting, San Antonio, Texas, USA.

118. C. K. Cheng, S. Y. Wu, K. H. Chen, C. H. Hsu, J. Kwo, and M. Hong (2015,

Jan). Atomic layer deposited Y2O3 on GaAs(001)-4x6 - thickness dependence of

crystallographic structures and electrical properties and the correlation. 中華民 國物理年會, National Tsing Hua University, Hsinchu. 本人為通訊作者.

119. G.J Wei, W.S. Chen, Y.T. Cheng, C.H. Wei, Y.C. Lin, Y.H. Lin, T.W. Pi, J. Kwo,

M. Hong, and C.P. Cheng (2015, Jan). Interfacial Electronic Structure of Gold on

GaAs(001)-2x4: A Schottky-Barrier-Height Study. 中華民國物理年會, National

Tsing Hua University, Hsinchu. 本人為通訊作者.

120. K. Chen, B. Yang, Y. H. Lin, K. Y. Lin, S. Y. Wu, C. K. Cheng, T. W. Chang, C.

H. Hsu, J. Kwo, and M. Hong (2015, Jan). Single-crystal atomic-layer-deposition

Y2O3 on GaAs with high thermal stability and low interfacial trap densities. 中

華民國物理年會, National Tsing Hua University, Hsinchu. 本人為通訊作者.

121. K. H. Chen, H. Y. Lin, C. K. Cheng, C. Y. Wang, X. Q. Zhang, Y. H. Lee, C. M.

Cheng, M. Hong, and J. Kwo (2015, Jan). The effect of substrates on the material

properties of topological insulator films. 中華民國物理年會, National Tsing

Hua University, Hsinchu.

122. M. Hong, J. Kwo, T. W. Pi, C. H. Hsu, T. D. Lin, W. C. Lee, Y. C. Chang, and H.

Y. Hung (2015, Jan). (Invited talk) Pushing the ultimate CMOS and beyond.

Physics Society ROC Annual Meeting - 美國真空學會台灣分會 American

Vacuum Society (AVS) Taiwan Chapter Session, Topic "New Developments in

Atomic Layer Deposition Technology, National Tsing Hua University, Hsinchu,

Taiwan. 本人為第一作者、通訊作者.

123. Wan-Sin Chen, Guo-Jhen Wei, Yi-Ting Cheng, Ching-Hsuan Wei, Yu-Cheng Lin,

Yen-Hsun Lin, Tun-Wen Pi, R. Kwo, M. Hong, and Chiu-Ping Cheng (2015,

Jan). Interfacial Electronic Structure of Silver on GaAs(001)-2x4: 

A Schottky barrier-height study. 中華民國物理年會, National Tsing Hua University,

Hsinchu. 本人為通訊作者.

124. Y. H. Lin, R. L. Chu, W. J. Hsueh, K. Y. Lin, T. H. Chiang, C. H. Fu, G. J.

Brown, T. W. Pi, J. I. Chyi, J. Kwo and M. Hong (2015, Jan). Passivation of

GaSb using rare earth oxide Y2O3- a comparative study of Molecular Beam

Epitaxy and Atomic Layer Deposition. 中華民國物理年會, National Tsing Hua

University, Hsinchu. 本人為通訊作者.

125. Y. W. Chen, Y. C. Liu, Y. H. Lin, C. K. Cheng, K. Y. Lin, S. Y. Wu, T. H. Chiang,

H. Y. Hung, S. C. Tseng, C. H. Hsu, T. W. Pi, J. Kwo, and M. Hong (2015, Jan).

Surface morphology evolution of Fe3Si on GaAs(100)-4x6 and GaAs(111)A-2x2

- Atomic layer-by-layer growth studied by scanning tunneling microscopy. 中華 民國物理年會, National Tsing Hua University, Hsinchu. 本人為通訊作者.

126. K. Y. Lin, B. Z. Syu, Y. H. Lin, Z. J. Peng, J. F. Lee, C. H. Fu, H. W. Wan, C. P.

Cheng, T. W. Pi, J. Kwo, and M. Hong (2014, Dec). Direct Determination of

Schottky Barrier Heights and Band Bending between Fe3Si and GaAs(100) by

In-Situ XPS/UPS. 45th IEEE Semiconductor Interface Specialists Conference

(SISC), Bahia Resort Hotel, San Diego, CA. 本人為通訊作者.

127. M. Hong (2014, Dec). Beyond CMOS. Workshop, Department of Physics,

National Tsing Hua University, Hsinchu, Taiwan. 本人為第一作者、通訊作者.

128. M. Hong (2014, Dec). Beyond Si CMOS - Physics and Perspectives. Workshop,

Department of Electro-Physics, National Chiao Tung University, Hsinchu,

Taiwan. 本人為第一作者、通訊作者.

129. T. W. Pi, Y. T. Fanchiang, Y. H. Lin, T. H. Chiang, K. Y. Lin, Y. K. Su, C. H. Wei,

Y. C. Lin, G. K. Wertheim, J. Kwo, and M. Hong (2014, Dec). (Invited talk)

High k oxides on (In)GaAs surfaces studied by synchrotron radiation

photoemission. 45th IEEE Semiconductor Interface Specialists Conference

(SISC), Bahia Resort Hotel, San Diego, CA. 本人為通訊作者.

130. Y. H. Lin, R. L. Chu, W. J. Hsueh, K. Y. Lin, T. H. Chiang, C. H. Fu, T. W. Pi, J.

I. Chyi, J. Kwo, and M. Hong (2014, Dec). Comparison of MBE-Y2O3 and

ALD-Y2O3 passivated n-GaSb(100). 45th IEEE Semiconductor Interface

Specialists Conference (SISC), Bahia Resort Hotel, San Diego, CA. 本人為通訊 作者.

131. J. Raynien Kwo and Minghwei Hong (2014, Oct). Topological insulator thin

films for spintronics. The 1st International Beyond CMOS Workshop, IMEC,

Leuven, Belgium. 本人為通訊作者.

132. P. H. Lin, J. F. Lee, C. Y. Wang, H. Y. Lin, C. K. Cheng, Y. C. Liu, M. Hong, and

J. Kwo (2014, Sep). Material and physical properties of topological insulator

Bi2Te3 thin films by molecular beam epitaxy. 18th International Conference on

Molecular Beam Epitaxy, High Country Conference Center, Flagstaff, AZ, USA.

133. Y. C. Liu , Y. W. Chen, T. H. Chiang, H. Y. Hung, Y. H. Lin, C. K. Cheng, S. H.

Tseng, C. H. Hsu, T. W. Pi, J. Kwo, and M. Hong (2014, Sep). Surface

morphology evolution of Fe3Si on GaAs(100) and GaAs(111)A - Atomic layer-by-layer growth studied by scanning tunneling microscopy. 18th International

Conference on Molecular Beam Epitaxy, High Country Conference Center,

Flagstaff, AZ, USA.

134. M. Hong (2014, May). High k dielectrics on high carrier mobility

semiconductors for ultimate CMOS and beyond- accomplishments and the

remaining challenges. the 11th Taiwan-U.S. AFOSR Nanoscience Program

Review & Workshop, National Dong Hwa University, Hualien, Taiwan. 本人為 第一作者、通訊作者.

135. W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong (2014, May).

High /III-V for ultimate CMOS - interfacial passivation, low ohmic contacts, 

and device performance. The 225th ECS meeting, Orlando, FL. 本人為通訊作 者.

136. M. Hong (2014, Apr). High k dielectrics on high carrier mobility semiconductors

for ultimate CMOS - accomplishments and the remaining challenges. TSMC,

Hsinchu, Taiwan. 本人為第一作者、通訊作者.

137. H. Y. Hung, H. Y. Ling, T. H. Chiang, B. Z. Syu, J. G. Lin, S. F. Lee, M. Hong,

and J. Kwo (2014, Mar). Investigation of Spin Pumping in Fe3Si/GaAs and

Fe3Si/Bi2Se3 Bilayer Structure. American Physical Society (APS) March

meeting, Colorado Convention Center, Denver, Colorado, USA.

138. Minghwei Hong and J. Raynien Kwo (2014, Mar). Perfecting high k/GaSb(100)

interface using molecule beam epitaxy Y2O3. Air Force Research Laboratory

(Wright-Patterson Air Force Base (WPAFB)), Dayton, Ohio. 本人為第一作者、 通訊作者.

139. B. Z. Syu(許倍準), H.Y. Hung(洪宏宜), T. H. Chiang(江宗鴻), J. G. Lin(林昭 吟), S. F. Lee(李尚凡), M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan).

The dependence of spin-injection efficiency on Schottky barrier heights between

Fe¬3Si and n-(or p-) GaAs(100). 中華民國物理年會, National Chung Hsing

University, Taichung. 本人為通訊作者.

140. C. Y. Wang(王澄宇), C. Y. Lin(林孝于), Po-Hao Lin(林柏皓), Jian-Feng Li(李

健逢), S. F. Lee(李尚凡), M. Hong(洪銘輝), and J. Kwo(郭瑞年) (2014, Jan).

Transport and XPS study of topological insulator: Bismuth Selenide and

Bismuth Telluride. 中華民國物理年會, National Chung Hsing University, Taichung.

141. C.H. Fu(傅千驊), W. H. Chang (張文馨), R. L. Chu(朱瑞霖), T. D. Lin(林宗達),

T. H. Chiang(江宗鴻), Y. D. Wu(吳彥達), J. Kwo(郭瑞年) and M. Hong(洪銘 輝) (2014, Jan). An Investigation of Ni-InGaAs Source/Drain Ohmic Contact for III-V CMOS. 

中華民國物理年會, National Chung Hsing University, Taichung. 本人為通訊作者.

142. Jian-Feng Li(李健逢), Po-Hao Lin(林柏皓), Hsiao-Yu Lin(林孝于), Cheng-Maw Cheng (鄭澄懋), M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan).

ARPES and XPS study of Bi2Se3 and Bi2Te3 thin films: the relationship

between chemical composition and doping level on as-grown TI films. 中華民國 物理年會, National Chung Hsing University, Taichung.

143. M. Hong, T. D. Lin, W. H. Chang, R. L. Chu, Y. C. Chang, J. Kwo, H. Y. Hung,

and T. W. Pi (2014, Jan). Pushing the ultimate CMOS and beyond. Special forum

"5 nm CMOS and beyond", 2014 Annual Physical Society Rep. of China

Meeting, National Chung Hsin University, Taichung, Taiwan. 本人為第一作者、 通訊作者.

144. P. H. Lin(林柏皓), C. Y. Lin(林孝于), J. F. Lee(李健逢), Z. K. Zheng(鄭兆凱),

M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan). Materials Properties of

High-Quality Bi2Te3 Thin Films by Molecular Beam Epitaxy. 中華民國物理年 會, National Chung Hsing University, Taichung.

145. S. Y. Huyan(呼延澍元), C. N. Wu(巫啟男), J. Y. Lee(李俊逸), Y. C. Liu(劉有騏), J. F. Lee(李健逢), H. Y. Lin(林孝于), Y. W. Chen(陳昱維), T. L. Hung(洪慈蓮), M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan). Epitaxial thin film growth of perovskite Sr2RuO4 by pulsed laser deposition. 中華民國物理年會, National Chung Hsing University, Taichung.

146. Y. T. Fanchiang(范姜宇廷), Y. K. Su(蘇毓凱), K. S. Chen(陳冠雄), Y. C. Chang(張耀中),

 T. H. Chiang(江宗鴻), J. Kwo (郭瑞年) and M. Hong(洪銘輝) (2014, Jan). 

Comparison of methods to extract interface state densities at atomic layer-deposited high-k dielectric/ III-V heterostructures. 中華民國物理年會,

National Chung Hsing University, Taichung. 本人為通訊作者.

147. Y. W. Chen(陳昱維), Y. C. Liu(劉有騏), T. H. Chiang(江宗鴻), H. Y. Hung(洪

宏宜), M. Hong(洪銘輝), and J. Kwo(郭瑞年) (2014, Jan). Growth Mechanism

of Fe3Si on GaAs(100) and GaAs(111) by Scanning Tunneling Microscopy. 中

華民國物理年會, National Chung Hsing University, Taichung. 本人為通訊作者.

148. M. Hong (2014). High k dielectrics on high carrier mobility semiconductors for

ultimate CMOS - accomplishments and the remaining challenges. The National

Nano Device Laboratories (NDL), Hsinchu, Taiwan. 本人為第一作者、通訊作者.

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