Group Member

博士後 Postdoc

林延勳, Glen Yen-Hsun Lin

Research Interests

• Analyses of high performance III-V Metal-Oxide-Semiconductor Heterostructure
• Growth of high-quality semiconductors and high-k dielectrics using multi-chamber UHV/MBE system for studies in III-V, Ge, and Si    surface passivation

Education

• Ph.D. candidate, Department of Physics, National Taiwan University, Taipei, Taiwan, Aug. 2013- now
• M.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Aug. 2012- Jul. 2013 (permission for entering Ph.D. program, 逕行攻讀博士班)
• B.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Sep. 2008- Jul. 2012

E-mail: f01222018@ntu.edu.tw

Research achievement

• Demonstration of single crystal ALD grown Y2O3 on GaAs(100) for unpinning the Fermi level with interface state density (Dit) below 1x10^12 cm-2eV-1
• Y. H. Lin et al., "Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition" Materials, vol. 8, pp. 7084-7093, Oct 2015.
• Y. H. Lin et al., " Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001)" Appl. Phys. Express, vol. 9, pp. 081501, Jul 2016.

Experience

• Setup and maintenance of multi-chamber UHV/MBE system, thermal/e-beam metallization system, and rapid-thermal-annealing system
• Growth of III-V semiconductors and deposition of high k dielectrics using multi-chamber UHV/MBE system
• Investigation of pinning/unpinning mechanism of III-V Fermi-level by in-situ dielectric deposition and analyses
• Research on novel high-k dielectric thin-films for III-V's

博士後 Postdoc 

鄭伊婷, Yi-Ting Cheng

Research Interests

• Analyses the interfacial electronic structure of high-k dielectrics/ Group-IV Semiconductor Heterostructures using synchrotron radiation photoemission (SRPES)
• Growth of high-k dielectrics onto clean (Si)Ge surface using in-situ atomic layer deposition (ALD) for studies in surface passivation of heterostructures

Education

• Doctor of Philosophy (Ph.D.) candidate | September 2017 - 2023

Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan

• Master's degrees (M.S.) | September 2013 - July 2015

Department of Electrophysics, National Chiayi University, Chiayi, Taiwan

• Bachelor's degrees (B.S.) | September 2009 - July 2013

Department of Electrophysics, National Chiayi University, Chiayi, Taiwan

E-mail: d06245005@ntu.edu.tw

Research achievement

Investigation of an atom-to-atom interaction of the Si/Ge heterostructure and its oxidation. Demonstration of a novel method for scavenging the segregated-Ge and GeOx from the Si/Ge heterostructure without high-temperature annealing and chemical treatment.

• Yi-Ting Cheng et al., "Low-temperature grown single-crystal Si on epi Ge(001) - 2 × 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission", Appl. Phys. Express. 2020. Accepted for publication at June 23, 2020.
• Yi-Ting Cheng et al., "Microscopic views of atomic and molecular oxygen bonding with epi Ge(001) - 2 × 1 studied by high-resolution synchrotron", Nanomaterials 9, 554 (2019). doi: 10.3390/nano9040554
• Yi-Ting Cheng et al., "Atom-to-atom interaction of O2 with epi Ge(001)- 2 × 1 in elucidating GeOx formation, Appl. Phys. Express 11, 115701 (2018). doi: 10.7567/APEX.11.115701
• Yi-Ting Cheng et al., "Surface electronic structure of epitaxial Germanium(001)-2×1, Appl. Phys. Express 10, 075701 (2017). doi: 10.7567/APEX.10.075701

Experience

• Maintenance of multi-chamber UHV/ALD/MBE system
• Deposition of high-k dielectrics and metal using in-situ ALD system
• Investigation of the electronic structure of oxides and Group-IV interface by in-situ SRPES
• Investigation of the surface reconstruction of Group-IV surface by low-energy electron diffraction (LEED)

Awards

• Student Oral Presentation in the Annual Meeting of the Physical Society of Taiwan

-The 2020 Annual Meeting of the Physical Society of Taiwan, February 5-7, 2020, Pingtung.

• Student Oral Presentation in Phys. & Chem. Science the Glory of Taiwan

- The NSRRC 23nd Users' Meeting & Workshops, September 5-8, 2017, Hsinchu. 

博士班 Ph.D. candidate

楊博宇, Lawrence Boyu Young 

Research Interests

• Atomic layer deposition of binary high-k materials for MOS application.
• Atomic layer deposition and structural analysis of ternary single-crystal materials
• Fabrication and analysis of high-performance III-V based MOSFET

Education

• Ph.D. Candidate, Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan, Feb. 2017- now
• M.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Sep. 2014- Feb. 2017 (permission for entering Ph.D. program, 逕行攻讀博士班)
• B.S., Department of Optoelectronic Engineering, National Taipei University of Technology, Taipei, Taiwan, Sep. 2010- June. 2014

E-mail: f03222019@ntu.edu.tw

Research achievement

• Induction of single-crystal ternary hexagonal perovskite YAlO3 on GaAs(111)A and GaN(0001) from the ordered monolayer-thick Y-O seed layer
• L. B. Young, C. K. Cheng, G.J. Lu, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R. F. Cai, S. C. Lo, C. H. Hsu, J. Kwo, M. Hong, "Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111)A", J. Vac. Sci. Technol. A 35, 01B123 (2017)
• L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, and M. Hong, "Single-crystal Ternary Perovskite YAlO3 Epitaxial Growth on GaAs and GaN via Y2O3 Template: Overcoming a Large Film/Substrate Lattice Mismatch", 18th Intl. Conf. on Atomic Layer Deposition, Incheon, South Korea, July 29 - August 1, 2018.
• L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong, "Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition" Crystal Growth & Design 19, 2030 (2019)

Experience

• Setup and maintenance of ALD system, sputtering system.
• Atomic layer deposition of binary oxide, nitride, and ternary oxide materials.
• Reactive magnetron sputtering of metals.
• Structural analysis of thin film materials using synchrotron radiation x-ray diffraction
• Design, fabrication, and analyses of high performance III-V metal-oxide- semiconductor field-effect-transistors (MOSFETs)

碩士班 Graduate student

賴瓘輝, Kuan-Hwei Lai 

Research Interests

Education

• M.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Aug. 2016- Jul. 2019
• B.S., Department of Physics, National Chung Hsing University, Taichung, Taiwan, Sep. 2012- Jul. 2016

E-mail: 

Research achievement

Experience

博士班 Ph.D. candidate

林耕雍, Keng-Yung (Wesley) Lin

Research Interests

• Electronic band structure study on novel 3D topological materials by in-house and synchrotron-based angle-resolved photoemission spectroscopy
• Chemical analysis of high-quality MBE/ALD grown thin films and their heterostructural interfaces by X-ray photoelectron spectroscopy

Education

• Ph.D. student, Department of Physics, National Taiwan University, Taipei, Taiwan, Aug. 2015 - now
• M.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Aug. 2013 - Jul. 2015 (permission for entering Ph.D. program)
• B.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Sep. 2009 - Jul. 2013

E-mail: f02222024@ntu.edu.tw

Research achievement

• Design and construction of in-house angle-resolved photoemission spectroscopy system with monochromatic UV source and 2-inch motorized cryo-stage down to 20 K, UHV integrated to existing growth/characterization systems
• K. Y. Lin et al., "Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum" J. Cryst. Growth,vol. 512, pp. 223-229, February 2019
• Enhancement of effective dielectric constant ~40% in high-temperature mixed bi-layered ALD Y2O3/Al2O3 on GaAs(001) with low interfacial trap density and leakage current density
• K. Y. Lin et al., "Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)" Microelectron. Eng.,vol. 178, pp. 271-274, May 2017

Experience

• Setup and maintenance of in-house angle-resolved photoemission spectroscopy system, X-ray photoelectron spectroscopy system, and UHV portable chamber system
• Electronic band structure study of 3D topological Dirac semimetal α-Sn, and topological insulators Bi2Se3 and (Bi1-xSbx)2Te3 thin films
• Chemical analysis of sputtered rare-earth iron garnet (oxide) thin films correlated to the sputtering conditions
• Investigation of interfacial chemistry of novel MBE/ALD high-k dielectric thin films on III-V's and 3D topological materials

博士班 Ph.D. candidate

鄭兆凱, Kent Chao-Kai Cheng

Research Interests

• Structural analyses of hetero-epitaxy films
• Strain analysis: Si/Ge, EuIG/GGG, a-Sn/InSb
• Formation of high quality YAlO3 on large lattice mismatch GaAs substrate

Education

• Ph.D. candidate, Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan, Aug. 2016- now
• M.S., Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan, Aug. 2013- Jul. 2016 (permission for entering Ph.D. program, 逕行攻讀博士班)
• B.S., Department of Mathematics, National Taiwan University, Taipei, Taiwan, Sep. 2009- Jul. 2013

E-mail: f02245005@ntu.edu.tw

Research achievement

• Demonstration of the formation of single crystal YAlO3 on GaAs after rapid thermal annealing
• L. B. Young et al., " Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A" J. Vac. Sci. Technol. A 35, 01B123, 2017.
• C. K. Cheng et al., " Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition" Microelectronic Engineering 178, 125-127, 2017.
• L. B. Young et al., " Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition" Cryst. Growth Des. 19, 2030-2036, 2019.

Experience

• Study the crystal structure and the crystallinity of films by using high resolution X-ray diffraction at NSRRC
• Research on the formation of perovskite YAlO3 thin-films on semiconductor substrate via sub-nano-laminated multilayer structure grown by atomic layer deposition

博士班 Ph.D. candidate

陳婉馨, Wan-Sin Chen 

Research Interests

• Molecular beam epitaxy growth of III-V semiconductors, topological insulators, and 2D ferromagnetic materials thin films
• Magnetic and electrical properties of 2D ferromagnetic materials
• Synchrotron radiation photoemission study on high-k/III-V, metal/III-V interfaces and topological insulators thin films

Education & Career

• Ph.D. student, Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan, Aug. 2017 - now
• NSC Special Projects full-time assistant, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Aug. 2015 - Jul. 2017
• M.S., Graduate Institute of Optoelectronics and Solid State Electronics, National 　　　　　　Chiayi University, Chiayi, Taiwan, Aug. 2013 - Jul. 2015
• B.S., Department of Electrophysics, National Chiayi University, Chiayi, Taiwan, Sep. 2009 - Jul. 2013

E-mail: d06245004@ntu.edu.tw

Research achievement

• Synchrotron radiation photoemission study of ALD-Y2O3 on GaAs(001)-4×6
• C. P. Cheng and W. S. Chen, et al., "In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(001)-4×6 surface" J. Phys. D: Appl. Phys., vol. 51, 405102, Aug. 2018.
• C. P. Cheng and W. S. Chen, et al., "Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High‑κ Y2O3 on GaAs(001)‑4×6 Based on in-situ Synchrotron Radiation Photoelectron Spectroscopy" ACS Omega, vol. 3, pp. 2111-2118, Feb. 2018.
• Schottky barrier height study of noble metal Ag on GaAs(001)-2×4
• T. W. Pi and W. S. Chen, et al., "Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance" Appl. Phys. Lett., vol. 110, 052107, Feb. 2017.
• C. P. Cheng and W. S. Chen, et al., "Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: an in-situ synchrotron radiation photoemission study" Appl. Surf. Sci., vol. 393, 294-298, Jan. 2017.

Experience

• Synchrotron radiation photoemission on MBE grown thin films and heterostructures for interfacial chemistry and Schottky barrier height study
• Molecular beam epitaxy of III-V semiconductors and topological insulators thin films
• Thermal/e-beam evaporation, magnetron sputtering, scanning tunneling microscopy, atomic force microscopy, and maintenance of multi-chamber UHV/MBE system

博士班 Ph.D. candidate

萬獻文, Jason Hsien-Wen Wan

Research Interests

• Post Si CMOS high mobility channel (SiGe/InGaAs) Metal-Oxide-Semiconductor interfaces and devices

Education

• Ph.D. candidate, Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan, Sep. 2015- now
• B.S., Department of Physics, National Taiwan University, Taipei, Taiwan, Sep. 2011- Jun. 2015

E-mail: f04222061@ntu.edu.tw

Research achievement

• First demonstration of HfO2/GaAs(001) inteface with thermal stability of 900oC and low interface state density (Dit) of 1-2x1011 cm-2eV-1
• "Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) Interface", H. W. Wan, Y. H. Lin, K. Y. Lin, T. W. Chang, R. F. Cai, J. Kwo, M. Hong, Microelectronic Engineering 178, 154, 2017.
• "Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structures in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition ", M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin, T. W. Pi, J. Kwo, Applied Physics Letters 111, 123502, 2017.

Experience

• Setup and maintenance of multi-chamber UHV/MBE system, e-beam system
• Growth of Si1-xGex, In1-xGaxAs semiconductors and deposition of high k dielectrics using UHV-connected multi-chamber MBE/ALD system
• Research on high-k dielectric for Si1-xGex MOSFETs