International Conference

Invited talk

2019

Minghwei Hong, J. Kwo, T. W. Pi, and C. H. Hsu, "Perfection of hetero-interfaces in enabling high-performance electronic/spintronic/photonic devices and beyond Moore's Law", (Invited talk) 2019 Ge based electronics Workshop, September 3, 2019, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany.

Y. T. Cheng, H. W. Wan, C. P. Cheng*, J. Kwo*, M. Hong*, and T. W. Pi*, "Atomic and molecular oxygen bonding with epi Ge(001)-2×1 surface studied by in-situ high-resolution synchrotron radiation", (Invited talk) 2019 Ge based electronics Workshop, September 3, 2019, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany.

H. W. Wan, Y. T. Cheng, C. K. Cheng, Y. J. Hong, L. B. Young, T. Y. Chu, C. T. Wu, R. F. Cai, S. C. Lo, J. Kwo*, M. Hong*, "Low-temperature ultra-thin epitaxial Si cap enabling highly reliable GeSi gate stack", (Invited talk) 2019 Ge based electronics Workshop, September 3, 2019, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany.

HZDR workshop

M. Hong, J. Kwo, T. W. pi, and C. H. Hsu, "Perfection of hetero-interfaces in enabling high-performance electronic/spintronic/photonic devices and beyond Moore's Law", Max Planck-Postech-Hsinchu Workshop on Complex Phase Materials (MPI CPfS), September 4-6, 2019, Dresden, Germany.    

MPI CPfS workshop

2018 

M. Hong, Y. H. Lin, H. W. Wan, W. S. Chen, Y. T. Cheng, C. P. Cheng, T. W. Pi, and J. Kwo, " Interfacial perfection for pushing InGaAs and Ge MOS device limits", (Invited talk) 14th International Conference on Solid-State and Integrated Circuit Technology ICSICT, Oct. 31- Nov. 3, 2018, Qingdao, China.

K. Y. Lin, H. W. Wan, K. H. M. Chen, Y. T. Fanchiang, W. S. Chen, Y. H. Lin, Y. T. Cheng, C. C. Chen, H. Y. Lin, L. B. Young, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong, "Molecular beam epitaxy. Atomic layer deposition, and multiple functions connected via ultra-high vacuum, (invited talk) 20th International Conference on Molecular Beam Epitaxy, September 2-7, 2018, Shanghai, China.

2017

T. W. Pi*, C. P. Cheng*, K. Y. Lin, Y. H. Lin, W. S. Chen, Y. T. Cheng, L. B. Young, H. W. Wan, J. Kwo*, and M. Hong*, "Interfacial Electronic Characterization of Oxides/Metals on High Mobility Semiconductors Using in-situ Synchrotron Radiation Photoemission and the Correlation with the Interfacial Electric Properties", (Invited talk) The 2017 International Conference on Frontiers of Characterization and Metrology for Nano-electronics (FCMN) will be held at the Monterey Marriott in Monterey, March 21-23, 2017, CA.

2016

M. Hong*, K. Y. Lin, H. W. Wan, L. B. Young, C. K. Cheng, Y. H. Lin, Y. T. Cheng, W. S. Chen, C. H. Hsu, T. W. Pi*, and J. Kwo*, "ALD oxides in-situ on semiconductors for perfecting interfaces in pushing high-performance MOSFETs and attaining single-crystal complex materials", (Keynote), (Invited talk) The 3rd International Conference on ALD Applications and 2016 China ALD Conference, October 16-19, 2016, Suzhou, China.

2014

M. Hong, M. H. Liao, T. D. Lin, W. H. Chang, T. W. Pi, and J. Kwo, "High k/InGaAs for ultimate CMOS - interfacial passivation, low ohmic contacts, and device performance", (Invited talk), 225th ECS meeting, May 11-15,2014, Orlando, Florida.

T. W. Pi, Y. T. Fanchiang, Y. H. Lin, T. H. Chiang, K. Y. Lin, Y. K. Su, C. H. Wei, Y. C. Lin, G. K. Wertheim, J. Kwo, and M. Hong, "High k oxides on (In)GaAs surfaces studied by synchrotron radiation photoemission, (Invited talk) 45th IEEE Semiconductor Interface Specialists Conference (SISC), December 10-13, 2014, San Diego, CA

2012

J. Kwo, M. Hong, T. W. Pi, W. W. Pai, Y. M. Chang, M. L. Huang, Y. C. Liu, C. A. Lin, T. D. Lin, Y. H. Chang, and W. C. Lee, "Physics and Chemistry of the High k/InGaAs Interface for High Mobility Channel MOSFET", (Invited talk) 43th IEEE Semiconductor Interface Specialists Conference (SISC), December 6-8, 2012, San Diego, CA

2011

M. L. Huang, W. C. Lee, T. D. lee, Y. H. Chang, C. A. Lin, Y. C. Chang, T. W. Pi, J. Kwo, and M. Hong, "Pushing the material limits in high k dielectrics on high carrier mobility semiconductors. Is in-situ process the best choice? (Invited talk) 42th IEEE Semiconductor Interface Specialists Conference (SISC), December 1-3, 2011, Arlington, VA

IEEE Semiconductor Interface Specialists Conference (SISC)

https://www.ieeesisc.org/past.html#programs

2019

"Low-Temperature Ultra-Thin Epitaxial Si Cap Enabling Highly Reliable Ge MOS", H. W. Wan, Y. J. Hong, Y. T. Cheng, C. K. Cheng, L. B. Young, C. T. Wu, J. Kwo, and M. Hong

"Comparative studies of (001), (110) and (111) epi-Ge surfaces oxidation by in-situ high-resolution synchrotron radiation photoemission", Y. T. Cheng, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Thin-Si capped Ge(100), (110), and (111) Gate Stacks - Attainment of Low Interfacial Trap Density for FinFET Application and the Reliability", H. W. Wan, Y. T. Cheng, C. K. Cheng, Y. J. Hong, T. Y. Chu, C. T. Wu, J. Kwo, and M. Hong

2017

"Temperature-dependent barrier heights measured in high-k/GaAs - elucidating capacitance - voltage frequency dispersion for proper determination of border traps", K. Y. Lin, T. W. Chang, H. W. Wan, Y. J. Hong, L. B. Young, J. Kwo, and M. Hon

2016

"Rebooting the interfacial knowledge of high-k dielectrics on In0.53Ga0.47As(001)-4X2", Y. H. Lin, Y. T. Cheng, W. S. Chen, K. Y. Lin, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance", W. S. Chen, Y. H. Lin, Y. T. Cheng, K. Y. Lin, T. W. Chang, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Epi Ge(001)-2x1 surface aimed for high-k deposition: An electronic structure study", Y. T. Cheng, W. S. Chen, Y. H. Lin, S. Wang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Determination of Schottky barrier height prior to metal formation", C. P. Cheng, W. S. Chen, K. Y. Lin, G. J. Wei, Y. T. Cheng, Y. H. Lin, H. W. Wan, T. W. Pi, R. T. Tung, J. Kwo, and M. Hong

"ALD Oxides In-situ on InGaAs - Perfecting Interfacial Electronic Structures in Pushing High-Performance Inversion-Channel MOSFETs", H. W. Wan, K. Y. Lin, M. H. Chen, L. B. Toung, Y. H. Lin, Y. C. Chang, T. D. Li, Y. T. Cheng, W. S. Chen, S. H. Chen, T. W. Pi, J. Kwo, and M. Hong

2015

"Interfacial electronic structure of the noble metals on a2-GaAs(001)-2X4 surface: Atom-to-atom interaction and the Schottky barrier height", W. S. Chen, C. P .Cheng, G. J. Wei, Y. T. Cheng, C. H. Wei, Y. C. Lin, Y. H. Lin, K. Y. Lin, T. W. Pi, J. Kwo, and M. Hong

"Interfacial electronic structure of aluminum on GaAs(001)-46: Re-examination of the interface with ALD tri-methylauminum and water", T. W. Pi, C. P Cheng, Y. T. Cheng, W. S. Chen, S. Wang, G. J. Wei, C. H. Wei, Y. C. Lin, Y. H. Chang, Y. H. Lin, J. Kwo, and M. Hong

"Enhanced ALD-Y2O3 Thin Film Quality and Interface Cleansing Achieved by UHV Annealing for III-V Passivation", K. Y. Lin, Y. H. Lin, K. H. Chen, L. B. Young, C. H. Fu, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

2014

"Comparison of MBE-Y2O3 and ALD- Y2O3 passivated n-GaSb(100)", Y. H. Lin, R. L .Chu, W. J. Hsueh, K. Y. Lin, T. H. Chiang, C. H. Fu, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong

"Direct Determination of Schottky Barrier Heights and Band Bending between Fe3Si and GaAs(100) by In-Situ XPS/UPS", K. Y. Lin, B. Z. Syu, Y. H. Lin, Z. J. Peng, J. F. Lee, C. H. Fu, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

2013

"Electronic structure of (In)GaAs surfaces and native-oxide free high k interfaces - Synchrotron radiation photoemission studies", T. W. Pi, T. D. Lin, T. H. Chiang, Y. T. Liu, Y. C. Cheng, C. H. Wei, G. K. Wertheim, J. Kwo, and M. Hong

"Perfecting high k/GaSb(100) interface using molecule beam epitaxy Y2O3", R. L. Chu, W. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin, T. D. Lim, C. H. Fu, G. J. Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong

2012

"Investigation of MBE-grown In0.53Ga0.47As(001)-4X2 Surface and in-situ ALD TEMA-Hf-dosed Surface by STM", Y. C. Liu, M. L. Huang, T. D. Lin, Y. T. Liu, W. C. lee, W. W. Pai, M. Hong, and J. Kwo

"Electronic Structure of (In)GaAs(001) Surfaces and Native Oxide Free High k Interfaces", T. W. Pi, T. D. Lin, H. Y. Lin, Y. T. Liu, Y. C. Chang, M. L. Huang, Y. H. Chang, G. K. Wertheim, J. Kwo, and M. Hong

2011

"Fermi level unpinning in metal/oxide and oxide/III-V interfaces: metal gates on MBE-grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs heterostructures", Y. C. Cheng, W. C. Hsu, T. H. Chiang, C. A. Lin, Y. D. Wu, J. Kwo, and M. Hong

"Interfacial Electronic Structure of ALD Al2O3 on the Clean GaAs(001)-4X6 Surface: A High-Resolution Synchrotron Radiation Photoemission Study", T. W. Pi, M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen, K. H. Lee, G. K. Wertheim, M. Hong, and J. Kwo 

IEEE International Reliability Physics Symposium (IRPS)

2019

"BTI Characterization of MBE Si-capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing", H. W. Wan, Y. J. Hong, Y. T. Cheng, and M. Hong

"Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability", H. W. Wan, Y. J. Hong, L. B. Young, M. Hong

The AVS International Conference on Atomic Layer Deposition (ALD)

2019

"Perfecting ALD-Y2O3/GaAs(001) interface with Ultra-High Vacuum Annealing", K. Y. Lin, Y. H. Lin, W. S. Chen, H. W. Wan, L. B. Young, C. P Cheng, T. W. Pi, J. Kwo and M. Hong

"High-Temperature Thermal Stability of ALD-TiN Metal Gate on In-situ Al2O3/Y2O3/(In)GaAs(001): Toward the Self-Aligned Gate-First Process", L. B. Young, H. W. Wan, J. H. Huang, K. Y. Lin, J. Liu, Y. H. Lin, J. Kwo, and M. Hong

2018

"Growth Mechanism of High-k Y2O3 on GaAs(001)-4X6 using in-situ Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy", C. P Cheng, W. S. Chen, Y. T. Cheng, L. B. Young, H. W. Wan, C. Y. Yang, K. Y. Lin, T. W. Pi, J. Kwo, and M. Hong

"Single-crystal Ternary Perovskite YAlO3 Epitaxial Growth on GaAs and GaN via Y2O3 Template Overcoming a Large Film/Substrate Lattice Mismatch", L. B. young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Lin, C. H. Hsu, J. Kwo, and M. Hong

2017

"Perfecting Single-Crystal Ternary Perovskite YAlO3 Epitaxial Growth on GaAs(111)A Utilizing Atomic Layer Deposited Sub-Nano-Laminated Y2O3/Al2O3", L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R. F. Cai, S. C. Lo, C. H. Hsu, J. Kwo, and M. Hong

"ALD-Y2O3/GaAs(001) Having Extremely High Thermal Stability at 900 and Very Low Interfacial Trap Densities - Comparative Studies with ALD-Al2O3 and HfO2 Gate Dielectrics", Y. H. Lin, H. W. Wan, L. B. Young, C. K. Cheng, K. Y. Lin, Y. T. Cheng, W. S. Chen, C. P Cheng, T. W. Pi, J. Kwo, and M. Hong

"Interface Dipole of High k-Y2O3 on GaAs(001) Attained using Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy", W. S. Chen, K. Y. Lin, L. B. Young, Y. T. Cheng, Y. H. Lin, H. W. Wan, C. Y. Yang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Elucidation of Distinct Electric Characteristics on ALD Oxides on Highly Ordered GaAs(001) and In0.53Gas0.47As(001) Surfaces using Synchrotron Radiation Photoelectron Spectroscopy", Y. T. Cheng, W. S. Chen, K. Y. Lin, L. B. Young, Y. H. Lin, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Atomic Layer Deposited Single Crystal High-k Y-doped Cubic HfO2 on GaAs(001) Utilizing HfO2/Y2O3 Super-cycles", L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. Kwo, and M. Hong

"Great Enhancement of Dielectric Constant via High Temperature Annealing ALD Bi-layered Oxides", K. Y. Lin, L. B. Young, C. K. Cheng, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Hong, and J. Kwo

2016

"Low interfacial trap densities in single crystal atomic-layer-deposited Y2O3 on GaAs(001)", K. Y. Lin, T. W. Chang, C. K. Cheng, Y. H. Lin, L. B. Young, C. H. Fu, K. H. Chen, S. H. Chen, C. H. Hsu, J. Kwo, and M. Hong

"Synchrotron radiation photoemission dielectric oxides grown by atomic layer deposition (ALD) on single-crystal (In)GaAs surfaces", T. W. Pi, K. Y. Lin, T. D. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, C. P. Cheng, J. Kwo, and M. Hong

NSRRC user's Meeting & Workshops

2019

"An early stage of oxidation of an epi Ge(001)-2X1 studied by in-situ high-resolution synchrotron radiation photoemission", Y. T. Cheng, H. W. Wan, C. P. Cheng, J. Kwo, M. Hong, and T. W. Pi

2018

"ALD-Y2O3 on GaAs(001)-4X6 - an in-situ atomic study of growth mechanism using synchrotron radiation photoemission", W. S. Chen, K. Y. Lin, L. B. Young, Y. T. Cheng, Y. H. Lin, H. W. Wan, C. Y. Yang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"A Unique surface electronic structure of epi Ge(001)-2X1", Y. T. Cheng, W. S. Chen, Y. H. Lin, H. W. Wan, K. Y. Lin, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Stress-induced perpendicular magnetic anisotropy in single crystal TmIG films", C. K. Cheng, C. C. Tseng, C. N. Wu, K. Y. Lin, S. L. Yeh, Y. T. Fanchiang, C. H. Hsu, J. Kwo, and M. Hong

"Single-crystal ternary perovskite YAlO3 grown on GaAs and GaN: overcoming a large lattice mismatch via a Y2O3 template", L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, and M. Hong

2017

"Interface dipole of high-k Y2O3 on GaAs(001)-4x6 attained using cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy", W. S. Chen, K. Y. Lin, L. B. young, Y. T. Cheng, Y. H. Lin, H. W. Wan, C. Y. Yang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong

"Elucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy", Y. T. Cheng, W. S. Chen, K. Y. Lin, L. B. Young, Y. H. Lin, H. W. Wan, T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong

2016

"Phase formation and photoluminescence of single crystal Y3Al5O12 garnet on Gd3Ga5O12 garnet substrate via a novel nano laminated-ALD", G. J. Lu, C. K. Cheng, L. B. Young, K. Y. Lin, C. N. Wu, C. H. Hsu, B. M. Cheng, J. Kwo, and M. Hong

"Structural analysis of Bi2Se3 thin films on various substrates", C. K. Cheng, H. Y. Lin, K. H. Chen, X. Q. Zhang, Y. H. Lee, C. H. Hsu, M. Hong, and J. Kwo

"Formation of yttrium aluminum perovskite on GaAs with ALD-Y2O3/Al2O3 nano-multilayer", L. B. Young, G. J. Lu, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo, and M. Hong

"Synchrotron-radiation photoemission study of interfacial electronic structure of Ag on GaAs(001)-4x6", W. S. Chen, Y. T. Cheng, Y. H. Lin, K. Y. Lin, T. W. Pi, J. Kwo, M. Hong, and C.-P. Cheng

"Interfacial electronic structure of gold on p-In0.53Ga0.47As(001)-4×2: A Schottky barrier height study", Y. T. Cheng, H. Wang, W. S. Chen, C. H. Wei, Y. H. Lin, T. W. Pi, J. Kwo, M. Hong, and C.-P. Cheng

Max Planck-Postech-Hsinchu Workshop on Complex Phase Materials (MPI CPfS)

2019

"Band structure study of topological material strained a-Sn on InSb(001) and (111)B", K. Y. Lin, J H. M. Chen, S. W. Huang, C. K. Cheng, H. Y. Lin, C. M. Cheng, J. Kwo, and M. Hong

"Structural and compositional study of high-quality (Bi1-xSbx)2Te3 thin films grown by molecular beam epitaxy", C. K. Cheng, C. C. Chen, S. W. Huang, K. Y. Lin, W. S. Chen, Y. T. Fanchiang, J. S. Wei, W. J. Zou, M. Hong, and J. Kwo

"Magneto-transport study of proximity-induced exchange Dirac gap in topological insulator-magnetic insulator heterostructures", Y. T. Fanchiang, S. R. Yang, C. C. Chen, C. C. Tseng, Y.C. Liu, M.X. Guo, M. Hong, and J. Kwo

"Low-Temperature Ultra-Thin Epitaxial Si Cap Enabling Highly Reliable GeSi Gate Stacks", H. W. Wan, Y.T. Cheng, C. K. Cheng, Y. J. Hong, L. B. Young, T. Y. Chum C. T. Wu, R. F. Cai, S.C. Lo, J. Kwo, and M. Hong

"Atomic and molecular oxygen bonding with epi Ge(001)-2X1 surface studied by in-situ high-resolution synchrotron radiation", Y. T. Cheng, H. W. Wan, C. P. Cheng, J. Kwo, M. Hong, and T. W. Pi

"Evolution of the band structure of a-Sn(001) thin film on InSb(001)", K. H. M. Chen, K. Y. Lin, S. W. Huang, C. K. Cheng, .H. Y. Lin, S. W. Lian, T. R. Chang, C. M. Cheng, M. Hong, and J. Kwo

"Observation of room-temperature anomalous Hall effect in bulk-insulating topological insulators (Bi,Sb)2Te3 on Thulium iron garnets", C. C. Chen, J. S. Wei, S. R. Yang, M. X.Guo, C. K. Cheng, S. W. Huang, K. Y. Lin, M. H. M. Chen, Y. T. Fanchiang, M. Hong, and J. Kwo

"Electronic structure of topological insulator Bi2Se3 thin films on Ferrimagnetic insulator thulium iron garnet heterostructures", S. W. Huang, K. Y. Lin, C. C. Chen, M. X. Guo, C. K. Cheng, C. M. Cheng, M. Hong, and J. Kwo