Publication(2000-~2004)
2001~2004
186. "New Phase Formation of Gd2O3 films on GaAs (100)", A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, and M. Erbudak, J. Vac. Sci. Technol. B 19(4), p. 1434, 2001. (The paper was presented at 19th North American Conference on Molecular Beam Epitaxy, October 16-18, 2000, Arizona State University, Tempe, Arizona.)
187. "Properties of High k Gate Dielectrics Gd2O3 and Y2O3 for Si", J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, J. Appl. Phys. Vol. 89, No. 7, pp.3920-3927, 1 April, 2001.
190. "C-V and G-V characterization of Ga2O3(Gd2O3)/GaN capacitor with low interface state density", T. S. Lay, W. D. Liu, M. Hong, J. Kwo, and J. P. Mannaerts, Electronics Letters, Vol. 37, No. 9, 595, 2001.
191. "Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces", T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, and D. J. Huang, Solid State Electronics, 45, pp. 1679-1682, 2001.
192. "Interface reactions of high-�n�� Y2O3 gate oxides with Si", B. W. Busch, J. Kwo, M. Hong, J.P. Mannaerts, B.J. Sapjeta, W.H. Schulte, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 79, 2447, 2001.
193. "Single crystal GaN/Gd2O3/GaN heterostructure", M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee and J. I. Chyi, J. Vac. Sci. Technol. B 20(3), 1274, 2002 (presented at the 20th NA MBE October 1-3, 2001).
194. "Optical properties of gallium oxide thin films", M. Rebien, W. Henrion, M. Hong, J. P. Mannaerts, and M. Fleischer, Appl. Phys. Lett. 81, 250, 2002.
195. "Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs(100)" M. Sowwan, Y. Yacoby, J. Pitney, R. MacHarrie, M. Hong, J. Cross, D. A. Walko, R. Clarke, R. Pindak, and E. A. Stern, Phys. Rev. B 66, 205311, 2002 (12 pages).
196. "Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces", T. Fluckiger, M. Erbudak, A. Hensch, Y. Weisskopf, M. Hong, and A. R. Kortan, Surface and Interface Analysis, 34, pp. 441-444, 2002.
197. "Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing", T. S. Lay, W. D. Liu, J. Kwo, M. Hong, and J. P. Mannaerts, IEE Electronics Letters 38, No. 24, pp. 1594-1596, 21st November, 2002.
198. "Advances in High �� Gate Dielectrics for Si and III-V Semiconductors", J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Crystal Growth, 251, 645, 2003.
199. "Impact of metal/oxide interface to DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric", B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Crystal Growth, 251, 837, 2003.
200. "GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition", P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. R. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Letters v. 24, 4, p. 209, 2003.
201. "Optimization of AuGe/Ni/Au ohmic contacts for GaAs MOSFETs", H. C. Lin, S. Senanayake, and K. Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Dev., vol. 50, no. 4, pp. 880-885, 2003.
202. "Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor", T. S. Lay , Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, J. P. Mannaerts , Solid State Electronics 47(2), 1021-1025 June 2003.
203. "GaAs MOSFET with nm-thin dielectric grown by atomic layer deposition", P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180, 2003.
204. "Schottky Barrier Height and Interfacial State Density on Oxide-GaAs Interface", J. S. Hwang, M. F. Chen, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, J. Appl. Phys. 94 (1), pp. 348-353, 2003.
205. "Depletion-mode InGaAs metal-oxide-semiconductor field-effect-transistor with oxide gate dielectric grown by atomic-layer deposition", P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 84, 434, 2004.
206. "GaAs-based metal-oxide-semiconductor field-effect-transistors with Al2O3 gate dielectrics grown by atomic layer deposition", P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Electron. Mater. 33, 912, 2004.
2000-
001. "Development of A15 (V3Ga) Superconducting Material through Controlled Precipitation," M. Hong, D. Dietderich, and J. W. Morris, Jr., J. Appl. Phys. 51, 2774, 1980.
002. "Direct Solid-State Precipitation Processed A15 (Nb3Al) Superconducting Material," M. Hong, and J. W. Morris, Jr., Appl. Phys. Lett., 37, 1044, 1980.
003. "Microstructure and Properties of A15 Superconductors Formed by Direct Precipitation," M. Hong, D. R. Dietderich, I. W. Wu, and J. W. Morris, Jr., IEEE Trans. MAG-17, 278, 1981.
004. "The Preferred Habit of a Tetragonal Inclusion in a Cubic Matrix," S. H. Wen, E. Kostlan, M. Hong, A. G. Khachaturyan, and J. W. Morris, Jr., Acta Metalllurgica (now--Acta Materialia) 29, 1247, 1981.
007. "Superconducting Properties of a Liquid Infiltration Nb-Nb3Sn Composite Formed During a Low-Temperature Reaction," M. Hong, G. W. Hull, Jr., J. T. Holthuis, W. V. Hassenzahl, and J. M. Hong, Appl. Phys. Lett.,. 42, 621, 1983.
008. "Multi-filamentary Superconducting (NbTa)-Sn Composite Wire by Solid-Liquid Reaction for Possible Application Above 20 Tesla," M. Hong, G. W. Hull, Jr., E. O. Fuchs, and J. T. Holthuis, Materials Letters, Vol. 2, pp. 165-168, 1983.
011. "DC Getter Sputtered Amorphous GdCo Films: Magnetic Anisotropy and In-Depth Chemical Composition," M. Hong, E. M. Gyorgy, and D. D. Bacon, Appl. Phys. Lett., 44, 706, 1984.
014. "Intrinsic and Anisotropy of Tb-Fe Films Prepared by Magnetron Co-Sputtering," R. B. van Dover, M. Hong, E. M. Gyorgy, J. F. Dillon, Jr., and S. D. Albiston, J. Appl. Phys. 57(8), 389, April 15, 1985.
015. "Properties of Rare-Earth Metal Superlattices Grown by Molecular Beam Epitaxy," J. Kwo, E. M. Gyorgy, M. Hong, W. P. Lowe, D. B. McWhan, and R. Superfine, J. Appl. Phys. 57(8), 3672, April 15, 1985.
016. "New Phase Formation and Superconductivity in Reactively Diffused Nb3Sn Multilayer Films," J. M. Vandenberg, M. Gurvitch, R. A. Hamm, M. Hong, and J. M. Rowell, IEEE Trans. Magn. MAG-21, 819, 1985.
017. "Further Investigations of the Solid-Liquid Reaction and High-Field Critical Current Density in Liquid-Infiltrated Nb-Sn Superconductors," M. Hong, D. M. Maher, M. B. Ellington, F. Hellman, T. H. Geballe, J. W. Ekin, and J. T. Holthuis, IEEE Trans. Magn. MAG-21, 771, 1985.
018. "Reactive Diffusion and Superconductivity of Nb3Al Multilayer Films," J. M. Vandenberg, M. Hong, R. A. Hamm, and M. Gurvitch, J. Appl. Phys. 58, 618, 1985.
021. "Microstructures of Thin Sputtered Amorphous Tb.26Fe.74 and Polycrystalline Fe Films," S. Nakahara, M. Hong, R. B. van Dover, E. M. Gyorgy, and D. D. Bacon, J. Vac. Sci. & Technol. A4(3) 543, 1986.
022. "CoCr Thin Films Prepared by Magnetron Co-Sputtering," M. Hong, R. B. van Dover, J. M. Vandenberg, and D. D. Bacon, J. Mag. & Mag. Mat. 54-57, p.1585, 1986.
023. "Magnetic Properties of Single Crystal Rare Earth Gd/Y Superlattices," J. Kwo, E. M. Gyorgy, F. J. DiSalvo, M. Hong, and D. B. McWhan, J. Mag. & Mag. Mat., V. 54-57, p. 771, 1986.
024. "Effect of Oxidation on the Magnetic Properties of Unprotected TbFe Thin Films," R. B. van Dover, E. M. Gyorgy, R. P. Frankenthal, M. Hong, and D. J. Siconolfi, J. Appl. Phys. 59(4), pp1291-6, 1986.
025. "Magnetic Anisotropy in dc-Diode Getter Sputtered GdCo Films - How Important is the Argon Content in the Films?," D. D. Bacon, M. Hong, E. M. Gyorgy, P. K. Gallagher, S. Nakahara, and L. C. Feldman, Appl. Phys. Lett. 48, 730, 1986.
026. "Study of Liquid Infiltrated Nb-Sn Superconducting Composites Wire by Specific Heat Measurements," F. Hellman, M. Hong, R, G. W. Hull, Jr., and T. H. Geballe, J. Appl. Phys. 60, 3978, 1986.
027. "Growth of Rare Earth Single Crystals by MBE: The Epitaxial Relationships between hcp Rare Earth and bcc Niobium," J. Kwo, M. Hong, and S. Nakahara, Appl. Phys. Lett. 49, 319, 1986.
028. "Microstructure of Magnetron Co-Sputtered CoCr Thin Films," M. Hong, S. Nakahara, R. B. van Dover, and T. Boone, Appl. Phys. Lett. 49, 1308, 1986.
031. "Polarized Neutron Diffraction Studies of Gd-Y Synthetic Superlattices," C. F. Majkrzak, J. W. Cable, J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, J. V. Waszczak, H. Grimm, and C. Vettier, J. Appl. Phys. 61, 4055, 1987.
032. "Synthetic Magnetic Rare-Earth Dy-Y Superlattices," M. Hong, R. M. Fleming, J. Kwo, L. F. Schneemeyer, J. V. Waszczak, J. P. Mannaerts, C. F. Majkrzak, D. Gibbs, and J. Bohr, J. Appl. Phys. 61, 4052, 1987.
033. "Anomalous Aging Characteristics of Amorphous GdCo Films," M. Hong, D. D. Bacon, and S. Nakahara, J. Appl. Phys. 61, 3329, 1987.
034. "Modulated Magnetic Properties in Synthetic Rare Earth Gd-Y Superlattices," J. Kwo, M. Hong, F. J. DiSalvo, J. V. Waszczak, C. F. Majkrzak, Phys. Rev. B Rapid Comm. 35, 7295, 1987.
035. "Antiphase Domain Boundaries in the Superconducting Phase of Y-Ba-Cu-O System," C. H. Chen, D. J. Werder, S. H. Liou, J. R. Kwo, and M. Hong, Phys. Rev. B35 Rapid Comm. p. 8767, 1987.
036. "Break-Junction Tunneling Measurements of the High Tc Superconductor Y1Ba2Cu3O9," J. Moreland, J. W. Ekin, L. F. Goodrich, T. E. Capobianco, A. F. Clark, J. Kwo, M. Hong, and S. H. Liou, Phys. Rev. B35 Rapid Comm. p. 8856, 1987.
037. "Superconducting Y-Ba-Cu-O Oxide Films by Sputtering," M. Hong, S. H. Liou, J. Kwo, and B. A. Davidson, Appl. Phys. Lett. 51, 694, 1987.
038. "Structural and Superconducting Properties of Orientation Ordered Y1Ba2Cu3O7-x Films Prepared by Molecular Beam Epitaxy," J. Kwo, T. C. Hsieh, R. M. Fleming, M. Hong, S. H. Liou, B. A. Davidson, and L. C. Feldman, Phys. Rev. B36, Rapid Comm. p. 4039, 1987.
039. "Evidence for Weak Link and Anisotropy Limitations on the Transport Critical Current in Bulk Polycrystalline Y1Ba2Cu3Ox," J. W. Ekin, A. I. Braginski, A. J. Panson, M. A. Janocko, D. W. Capone, II, N. J. Zaluzec, B. Flandermeyer, O. F. deLima, M. Hong, J. Kwo, and S. H. Liou, J. Appl. Phys. 62, 4821, 1987.
040. "Raman Detection of Superconducting Gap in Ba-Y-Cu-O Superconductor," K. B. Lyons, H. S. Liou, M. Hong, H. S. Chen, J. Kwo, and T. J. Negran, Phys. Rev. B36, Rapid Comm. p. 5592, 1987.
041. "Low Magnetic Field Superconducting Phase Diagram Program of the High-Tc Y1Ba2Cu3O7-��," J. E. Drumheller, G. V. Rubenacker, W. K. Ford, J. Anderson, M. Hong, S. H. Liou, J. Kwo, and C. T. Chen, Solid State Comm. V. 64, 509, 1987.
044. "Versatile New Metallo-Organic Process for Preparing Superconducting Thin Films," M. E. Gross, M. Hong, S. H. Liou, P. K. Gallagher, and J. Kwo, Appl. Phys. Lett. 52, 160, 1988.
045. "Ion-Beam-Induced Destruction of Superconducting Phase Coherence in Y1Ba2Cu3O7-��," A. E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankeiwich, W. J. Skocpol, R. E. Howard, M. Anslowar, K. W. Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh, and M. Hong, Phys. Rev. B, Rapid Comm. 37, 3755, 1988.
046. "Magnetic Rare Earth Superlattices," C. F. Majkrzak, D. Gibbs, P. Boni, A. I. Goldman, J. Kwo, M. Hong, T. C. Hsieh, R. M. Fleming, D. B. McWhan, Y. Yafet, J. W. Cable, J. Bohr, H. Grimm, and C. L. Chien, Proc. 32nd Annual Conf. Mag. Mag. Mat., Chicago, IL, 1987, J. Appl. Phys. 63, 3447, 1988.
047. "Interlayer Exchange in Magnetic Superlattices," Y. Yafet, J. Kwo, M. Hong, and C. F. Majkrzak, Proc. 32nd Annual Conf. Mag. Mag. Mat., Chicago, IL, 1987, J. Appl. Phys. 63, 3453, 1988.
048. "Microstructure and Stability of rf-Diode Sputtered GdTbFeCo Thin Films," H-P. D. Shieh, M. Hong, and S. Nakahara, Proc. 32nd Annual Con. Mag. Mag. Mat., Chicago, IL, 1987, J. Appl. Phys., 63, 3627, 1988.
049. "Electronic Excitation of Y1Ba2Cu3O7-�� Superconductor - A Study by Transmission Electron Energy Loss Spectroscopy with an Electron Microprobe," C. H. Chen, L. F. Schneemeyer, S. H. Liou, M. Hong, J. Kwo, and H. S. Chen, Phys. Rev. B, 37, 9780, 1988.
050. "Microstructures of Y1Ba2Cu3O7-x�n Superconducting Thin Films Grown on SrTiO3(100) Substrates," C. H. Chen, J. Kwo, and M. Hong, Appl. Phys. Lett. 52, 841, 1988.
051. "Y-Ba-Cu-O Films by rf Magnetron Sputtering Using Single Composite Targets: Superconducting and Structural Properties," S. H. Liou, M. Hong, J. Kwo, B. A. Davidson, H. S. Chen, S. Nakahara, T. Boone and R. J. Felder, Appl. Phys. Lett. 52, 1735, 1988.
052. "High Critical Current Superconducting Bi-Sr-Ca-Cu-O Films by Sputtering", M. Hong, J. Kwo, J. J. Yeh, J. Crystal Growth, 91, 382, 1988.
053. "Observation of a Halide (F/C1) Stabilized, New Perovskite Phase in Superconducting Y2Ba5Cu7Ox Films", J. Kwo, M. Hong, R. M. Fleming, A. F. Hebard, M. Mandich, A. M. DeSantolo, B. A. Davidson, P. Marsh, N. D. Hobbins, Appl. Phys. Lett. 52, 1625, 1988.
054. "High Temperature Superconducting Oxide Films", M. Hong, J. Kwo, C. H. Chen, published in 38th Electronics Components Conf. proceedings P.146, 1988 and IEEE Trans. Components, Hybrides and Manufacturing Technology, V 11, 407, 1988.
055. "Incommnsurate Superlattice and 90o Twist Boundaries in the Superconducting Phase Bi-Sr-Ca-Cu-O", C. H. Chen, D. J. Werder, S. H. Liou, H. S. Chen, M. Hong, Rapid Comm. Phys. Rev. B, 37, 9834, 1988.
056. "Superconducting Properties of a 27A Phase of Ba-Y-Cu-O", M. L. Mandich, A. M. Santolo, R. M. Fleming, P. Marsh, S. Nakahara, S. Sunshine, J. Kwo, M. Hong, T. Boone, T. Y. Kometani, L. Martinez-Miranda, Rapid Comm. Phys. Rev. B. 38, 5031, 1988.
057. "Ion Beam Patterning of Spin-On Metallo-Organic Precursors and Formation of High TC Supercon- ductors", M. E. Gross, W. L. Brown, S. B. DiCenzo, E. H. Hartford, J. J. Yeh, M. Hong, Appl. Phys. Lett. 53, 802, 1988.
058. "Scanning-Electron-Microscope Identification of Weak Links in Superconducting Thin Films", D. Monroe, W. S. Brocklesby, R. C. Farrow, M. Hong, and S. H. Liou, Appl. Phys. Lett. Vol. 53, 1210, 1988.
059. "Tunneling Characteristics of Internal Josephson Junctions in Y1Ba2Cu3O7-x", W. S. Brocklesby, D. P. Monroe, M. Hong, S. H. Liou, J. Kwo, G. J. Fisanick, P. M. Mankiewich, R. E. Howard, Phys. Rev. B, Vol. 38, 11805, 1988.
060. "Crystal Structure of the 80K Superconductor YBa2Cu4O8", P. Marsh, R. M. Fleming, M. L. Mandich, A. M. DeSantolo, J. Kwo, M. Hong, L. Maratinez-Miranda, Nature V334, 141, 1988.
061. "Superconducting Tl-Ba-Ca-Cu-O Films by Sputtering", M. Hong, S. H. Liou, D. D. Bacon, G. S. Grader, J. Kwo, A. R. Kortan, and B. A. Davidson, Appl. Phys. Lett., 53, 2102, 1988.
062. "Magnetic Superlattices", J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, R. M. Fleming, F. J. DiSalvo, J. V. Waszczak, C. F. Majkrzak, D. Gibbs, A. I. Goldman, P. Boni, C. L. Chien, J. W. Cable, J. Bohr, and H. Grimm, Proc. International Conference on Magnetism (ICM) July 25-29, 1988, Paris, France, Ed. D. Givord, p.1651. JOURNAL DE PHYSIQUE (now-European physical journal applied physics) 49 (C-8): 1651-1655 Part 3 DEC 1988.
063. "In-Situ Epitaxial Growth of Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. T. Short, Appl. Phys. Lett. 53, 2683, 1988.
064. "Physical Processing Effects on Polycrystalline Y1Ba2Cu3Ox", W. K. Ford, J. Anderson, G. V. Rubenacker, J. E. Drumheller, C.-T. Chen, M. Hong, J. Kwo, S. H. Liou, J. of Materials Research, Vol. 4, 16, 1989.
065. "Electrical Response of Superconducting Y1Ba2Cu3O7-x to light", W. S. Brocklesby, D. Monroe, A. F. Levi, M. Hong, S. H. Liou, J. Kwo, C. E. Rice, P. M. Mankiewich, and R. E. Howard, Appl. Phys. Lett. Vol. 54, 1175, 1989.
066. "Growth of 200 A Superconducting Bi-Sr-Ca-Cu-O Thin Films", J. J. Yeh and M. Hong, Appl. Phys. Lett., 54, 769, 1989.
067. "Cu Valence and the Formation of High Tc Superconductor Oxides Studied by X-Ray Photoemission Spectroscopy on 200angstrom Bi-Sr-Ca-Cu-O Thin Films", J. J. Yeh, S. B. DiCenzo, E. H. Hartford, Jr., M. Hong, and R. J. Felder, Appl. Phys. Lett., 54, 377, 1989.
068. "In-Situ Formation of Y1Ba2Cu3Ox�n Thin Films by Physical Sputtering", J. J. Yeh, M. Hong, and R. J. Felder, Appl. Phys. Lett., 54, 1163, 1989.
069. "Diffraction Studies of Rare Earth Metals and Superlattices", J. Bohr, D. Gibbs, J. D. Axe, D. E. Moncton, K. L. D'Amico, C. F. Majkrzak, J. Kwo, M. Hong, C. L. Chien, and J. Jensen, Physica B, 93-105, 1989.
070. "Superlattice Modulation and Epitaxy of Tl2Ba2Ca2Cu3O10 Thin Films Grown on MgO and SrTiO3 Substrates", C. H. Chen, M. Hong, D. J. Werder, J. Kwo, S. H. Liou, and D. D. Bacon, Appl. Phys. Lett., 54, 1579, 1989.
071. "RF-Diode Sputtered Amorphous Rare Earth Transition Metal Films: Microstructure, Stability, and Magneto-optical Properties", H-P. D. Shieh, M. Hong, and S. Nakahara, ICMC89 Invited Paper, San Diego, CA, Thin Solid Films, 181, p.101, 1989.
072. "Properties of Superconducting Tl2Ba2Ca2Cu3O10 Films by Sputtering", M. Hong, J. Kwo, C. H. Chen, A. R. Kortan, D. D. Bacon, and S. H. Liou, ICMC89 Invited Paper, San Diego, CA, Thin Solid Films, 181, p.173-180, 1989.
073. "Far-Infrared tansmission of Bi2Sr2Ca1Cu2O8 Films", R. A. Hughes, T. Timusk, S. L. Cooper, G. A. Thomas, J. J. Yeh, and M. Hong, Phys. Rev. B, 40 (7B), 5162, 1989.
074. "In-Situ Growth of Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, J. P. Mannaerts, R. C. Farrow, A. R. Kortan, and K. T. Short, Physica C Vol. 162-164, p.623, 1989. (International Conference on Materials and Mechanisms of Superconductivity, High Temperature Superconductors II, Stanford University, July 24-28, 1989.)
075. "Use of Hybrid Reflectors to Achieve Low Thresholds in All MBE Grown Vertical Cavity Surface Emitting Lasers Diodes ", R. J. Fischer, K. Tai, M. Hong, and A. Y. Cho, Inst. Phys. Conf. Ser., No. 106, pp.9-12, 1990.
076. "Observation of Quasiparticle Tunneling and Josephson Behavior in Y1Ba2Cu3O7-x /native barrier/Pb Thin Film Junctions", J. Kwo, T.A. Fulton, M. Hong, and P.L. Gammel, Appl. Phys. Lett. V. 56, p. 788, 1990.
077. "Use of Hybrid Reflectors to Achieve Low Thresholds in All MBE Grown Vertical Cavity Surface Emitting Laser Diodes", R. J. Fischer, K. Tai, M. Hong, J. M. Vandenberg, J. Y. Ying, and A. Y. Cho, J. Vac. Sci. Technol. B 8 (2), p.336, Mar/Apr 1990.
078. "GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes", Y.H. Wang, K. Tai, R.J. Fischer, M. Hong, J.D. Wynn, and A.Y. Cho, IEEE Photonics Technology Lett. Vol. 2, No.7, 456, 1990.
079. "Magnetic Properties of Gd/Dy Superlattices: Experiment and Theory", R. E. Camley, J. Kwo, M. Hong, and C. L. Chien, Phys. Rev. Lett. Vol. 64, p.2703, 1990.
080. "Vertical Cavity Surface Emitting Lasers with Semitransparent Metallic Mirrors and High Quantum Efficiencies", L. W. Tu, E. F. Schubert, R. F. Kopf, M. Hong, S. N. G. Chu, J. P. Mannaerts, and G. J. Zydzik, Appl. Phys. Lett. 57, p.2045, 1990.
081. "Continuous Wave Top Surface Emitting Quantum Well Lasers Using Hybrid Metal/Semiconductor Reflectors", G. Hasnain, K. Tai, J.D. Wynn, Y.H. Wang, R.J. Fischer, M. Hong, B.E. Weir, G.J. Zydzik, J.P. Mannaerts, J. Gamelin, and A.Y. Cho, Electronics Letter 26, p.1590, 1990.
082. "Magnetic Rare Earth Superlattices", J. Kwo, M. Hong, Y. Yafet, C. F. Majkrzak, D. Gibbs, C. L. Chien, and J. Bohr, "Advances in Physics" Vol. 40, No. 2, 99-189, 1991.
083. "MBE Growth and Properties of Fe3(Al,Si) on GaAs(100)", M. Hong, H. S. Chen, J. Kwo, A. R. Kortan, J. P. Mannaerts, B. E. Weir, and L. C. Feldman, J. Crystal Growth, V.111, 984, 1991.
084. "A Simple Way to Reduce Series Resistance in p-Doped Semiconductor Distributed Bragg Reflectors", M. Hong, J. P. Mannaerts, J. M. Hong, R. J. Fischer, K. Tai, J. Kwo, J. M. Vandenberg, Y. H. Wang, and J. Gamelin, J. Crystal Growth, V.111, 1052, 1991.
085. "Vertical Cavity Top-Surface Emitting Lasers with Thin Ag Mirrors and Hybrid Reflectors", M. Hong, L. W. Tu, J. Gamelin, Y. H. Wang, R. J. Fischer, E. F. Schubert, K. Tai, G. Hasnain, J. P. Mannaerts, B. E. Weir, J. D. Wynn, R. F. Kopf, G. J. Zydzik, and A. Y. Cho, J. Crystal Growth, V.111, 1071, 1991.
086. "Reduced Current Thresholds in GaAs/AlGaAs Vertical Cavity Surface Emitting Lasers using 4degree off-oriented GaAs(100) Substrates", Y. H. Wang, K. Tai, S. N. G. Chu, Y. F. Hsieh, J. D. Wynn, M. Hong, R. J. Fischer, and A. Y. Cho, J. Crystal Growth, V.111, 1057, 1991.
087. "Infared Intersubband Photoinduced Charge Polarization in Asymmetrical Quantum Wells", B. F. Levine, S. D. Gunapala, and M Hong, Appl. Phys. Lett. 59, p.1969, 1991.
088. "Electron Cyclotron Resonance Plasma Preparation of GaAs Substrates for Molecular Beam Epitaxy", K. D. Choquette, M. Hong, R. S. Freund, J. P. Mannaerts, and R. C. Wetzel, EIPB '91, the 35th international symposium on electron, ion, and photon beams, 28-31 May, 1991, Seattle, Washington. J. Vac. Sci. Technol. B 9, 3502, Nov/Dec 1991.
089. "GaAs/AlxGa1-xAs Quantum Well Infrared Photodetectors with a Cutoff Wavelength of ��nc = 14.9 �慆", A. Zussman, B. F. Levine, M. Hong, and J. P. Mannaerts, Electronics Letters 27, p.1512, 1991.
090. "Blue/Green Surface-Emitting Second-Harmonic Generators on <111>B GaAs", D. Vakhshoori, R. J. Fischer, M. Hong, D. L. Sivco, G. S. Chu, G. J. Zydzik, and A. Y. Cho, Appl. Phys. Lett. 59, 896, 1991.
091. "A Periodic Index Separate Confinement Heterostructure Quantum Well Laser", M. C. Wu, Y. K. Chen, M. Hong, J. P. Mannaerts, M. A. Chin, and A. M. Sergent, Appl. Phys. Lett. 59, 1046, 1991.
092. "Interaction of Single Energetic Ions with Inhomogeneous Solids", M. Bode, A. Ourmazd, J. E. Cunningham, and M. Hong, Phys. Rev. Lett. 67, 843, 1991.
093. "In-Situ Growth and Properties of Single Crystalline-like La2-xSrxCuO4 Epitaxial Films by Off-Axis Sputtering", H. L. Kao, J. Kwo, R. M. Fleming, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 59, 2748, 1991.
094. "Short Pulse Generation by Electrical Gain Switching of A Vertical Cavity Surface Emitting Laser", J. Lin, J. K. Gamelin, S. Wang, M. Hong, and J. P. Mannaerts, Electronics Letters V. 27, No. 21, pp. 1956-1957, 1991.
095. "Ultrafast (Up to 39 GHz) Relaxation Oscillation of Vertical Cavity Surface Emitting Laser", J. Lin, J. K. Gamelin, K. Y. Lau, S. Wang, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 60, 15, 1992.
096. "MBE Growth and Characteristics of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers", M. Hong, M. C. Wu, Y. K. Chen, J. P. Mannaerts, and M. A. Chin, Electronic Materials Conference, June 19-21, 1991. J. Electronic Materials 21, No. 2, 181, 1992.
097. "Transmission Electron Microscopy Study of Inter-metallic Compound Fe3(Al,Si) epitaxially grown on GaAs" Y.-F. Hsieh, M. Hong, J. Kwo, A. R. Kortan, H. S. Chen, J. P. Mannaerts, and R. Hull, INSTITUTE OF PHYSICS CONFERENCE SERIES (120): 95-100 1992. (18th International Symposium on GaAs and Related compounds, Seattle, Washington, Sept. 1991, Inst. Phys. Conf. Ser. No 120: Chapter 2, p. 95, 1992.)
098. "In Situ Deposition of Au on Plasma-Prepared GaAs Substrates", K. D. Choquette, M. Hong, J. P. Mannaerts, D. J. Siconolfi, R. Frankenthal, F. A. Baiocchi, R. C. Wetzel, and R. S. Freund, J. Electronic Materials Vol. 21, No. 1, 17, 1992.
099. "Temperature Modulation MBE and Its Application to The Growth of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers", M. Hong, M. C. Wu, Y. K. Chen, J. P. Mannaerts, and M. A. Chin, 11th MBE Workshop, Austin, TX, Sept. 1991, J. Vac. Sci. Technol. B Vol. 10(2), 989, 1992.
100. "Structural Considerations in the Optimal Design of Surface-Emitting Laser Diodes", J. Gamelin, M. Hong, R. J. Fischer, J. Lin, J. P. Mannaerts, A. Y. Cho, and S. Wang, 11th MBE Workshop, Austin, TX, Sept. 1991, J. Vac. Sci. Technol. B Vol. 10(2), 1010, 1992.
101. "Vertical Microcavity Surface Emitting Ring Laser", J. Lin, J. K. Gamelin, M. Hong, G. T. Du, J. P. Mannaerts, and S. Wang, Appl. Phys. Lett. V.60, 2851, 1992.
102. "Molecular Beam Epitaxy Regrowth on In-Situ Plasma-Etched AlAs/AlGaAs Heterostructures", K. D. Choquette, M. Hong, R. S. Freund, S. N. G. Chu, J. P. Mannaerts, R. C. Wetzel, and R. E. Leibenguth, Appl. Phys. Lett. V. 60, 1738, 1992.
103. "Periodic Index Separate Confinement Heterostructure InGaAs/AlGaAs Quantum-Well Lasers Grown by Temperature Modulation Molecular Beam Epitaxy", M. Hong, Y. K. Chen, M. C. Wu, J. M. Vandenberg, S. N. G. Chu, J. P. Mannaerts, and M. A. Chin, Appl. Phys. Lett. V. 61, 43, 1992.
104. "Vertical-Cavity Surface Emitting Lasers Fabricated by Vacuum Integrated Processing", K. D. Choquette, G. Hasnian, J. P. Mannaerts, J. D. Wynn, R. C. Wetzel, M. Hong, R. S. Freund, and R. E. Leibenguth, IEEE Photonics Technology Letters Vol. 4, 951, 1992.
105. "An Investigation of Molecular Beam Epitaxy in-situ Grown Ag/GaAs Schottky Diodes", Y. H. Wang, M. P. Houng, F. H. Chen, P. W. Sze, M. Hong, and J. P. Mannaerts, J. Electronic Materials, V.21, No.9, 911, 1992.
106. "Study of AuAgFe/AlGaAs Schottky Diodes Fabricated by in-situ Molecular Beam Epitaxy", Y. H. Wang, M. P. Houng, F. H. Chen, P. W. Sze, M. Hong, and J. P. Mannaerts, J. Materials Science: Materials in Electronics, V.3, p.206-210, 1992.
107. "GaAs Surface Reconstruction Obtained Using a Dry Process", K. D. Choquette, M. Hong, H. S. Luftman, S. N. G. Chu, J. P. Mannaerts, R. C. Wetzel, and R. S. Freund, J. Appl. Phys. V.73, 2035, 1993.
108. "Hydrogen Plasma Removal of AlGaAs Oxides before Molecular Beam Epitaxy", K. D. Choquette, M. Hong, S. N. G. Chu, H. S. Luftman, J. P. Mannaerts, R. C. Wetzel, and R. S. Freund, Appl. Phys. Lett. V.62, 735, 1993.
109. "Relative Intensity Noise of Vertical Cavity Surface Emitting Lasers", D. M. Kuchta, J. Gamelin, J. D. Walker, J. Lin, K. Y. Lau, J. S. Smith, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. V.62, 1194, 1993.
110. "Magnetic Properties of Epitaxial Single Crystal Ultra-thin Fe3Si Films on GaAs (001)", S. H. Liou, S. S. Malhotra, J. X. Shen, M. Hong, J. Kwo, H. S. Chen, and J. P. Mannaerts, J. Appl. Phys. 73 (10), 6766, 1993.
111. "Vertical-Cavity Surface-Emitting Laser Diodes Fabricated by In-Situ Dry Etching and Molecular Beam Epitaxial Regrowth", K. D. Choquette, M. Hong, R. S. Freund, J. P. Mannaerts, R. C. Wetzel, and R. E. Leibenguth, IEEE Photonic Technolog. Lett. V.5 (3), 284, 1993.
112. "Removal of GaAs Surface Contaminants Using H2 Electron Cyclotron Resonance Plasma Treatment Followed by Cl2 Chemical Etching", M. Hong, R. S. Freund, K. D. Choquette, H. S. Luftman, J. P. Mannaerts, and R. C. Wetzel, Appl. Phys. Lett. 62, 2658, 1993.
113. "Ultralow Timing Jitter in Electrically Gain-Switched Vertical Cavity Surface Emitting Lasers", P. Pepeljugoski, J. Lin, J. Gamelin, M. Hong, and K. Y. Lau, Appl. Phys. Lett. 62, 1588, 1993.
114. "Vacuum Integrated Fabrication of Vertical-Cavity Surface Emitting Lasers", K. D. Choquette, M. Hong, R. S. Freund, S. N. G. Chu, R. C. Wetzel, and J. P. Mannaerts, J. Vac. Sci. Techn. B 11(5), p.1844, 1993.
115. "Hydrogen Plasma Processing of GaAs and AlGaAs", K. D. Choquette, R. S. Freund, M. Hong, H. S. Luftman, S. N. G. Chu, J. P. Mannaerts, and R. C. Wetzel, J. Vac. Sci. Techn. B 11 (6), p. 2025, 1993.
116. "Interfacial Characteristics of AlGaAs after in-situ Electron Cyclotron Resonance Plasma Etching and Molecular Beam Epitaxial Regrowth", M. Hong, J. P. Mannaerts, L. H. Grober, S. N. G. Chu, H. S. Luftman, K. D. Choquette, and R. S. Freund, J. Appl. Phys. 75 (6), p.3105, 1994.
117. "Low resistance and large current range CW single-mode top surface emitting laser with small window", G. Du, F. Zhao, X. Zhang, J. Lin, J. K. Gamelin, B. Wu, S. Wang, M. Hong, J. P. Mannaerts, Optical and Quantum Electronics 25, 745, 1993.
118. "Buried Heterostructure Laser Diodes Fabricated Using In-Situ Processing", M. Hong, D. Vakhshoori, L. H. Grober, J. P. Mannaerts, M. T. Asom, J. D. Wynn, F. A. Thiel, and R. S. Freund, J. Vac. Sci. Technol. 12(2), p.1258, 1994.
119. "In-Situ Non-Alloyed Ohmic Contacts to p-GaAs", M. Hong, D. Vakhshoori, J. P. Mannaerts, F. A. Thiel, and J. D. Wynn, J. Vac. Sci. Technol. 12 (2), p.1047, 1994.
120. "Interface Analysis of Dry Etched and MBE Regrown AlGaAs", L. H. Grober, M. Hong, J. P. Mannaerts, R. S. Freund, H. S. Luftman, and S. N. G. Chu, J. Vac. Sci. Technol. 12(2), p.1038, 1994.
121. "Properties of Al2O3 Optical Coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films", E. F. Schubert, M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, L. N. Pfeiffer, K. W. West, C. G. Bethea, and G. J. Zydzik, Appl. Phys. Lett. 64, 2976, 1994.
122. "Temperature Dependence of the Resonance X-Ray Magnetic Scattering in Holmium", G. Helgesen, T. Thurston, J. P. Hill, D. Gibbs, J. Kwo, and M. Hong, Phys. Rev. B50, 2990, 1994.
123. "Dielectric Properties of Electron-Beam Deposited Gallium Oxide Films", M. Passlack, N. E. J. Hunt, E. F. Schubert, M. Hong, J. P. Mannaerts, G. J. Zydzik, R. L. Opila, and R. J. Fischer, Appl. Phys. Lett. 64, 2715, 1994.
124. "In-Situ Process for AlGaAs Compound Semiconductor: Materials Science and Device Fabrication", M. Hong, K. D. Choquette, J. P. Mannaerts, L. H. Grober, R. S. Freund, D. Vahkshoori, S. N. G. Chu, H. S. Luftman, and R. C. Wetzel, J. Electronic Materials 23, No. 7, 625, 1994.
125. "Zone Lasers", D. Vakhshoori, M. Hong, M. T. Asom, R. E. Leibenguth, J. P. Mannaerts, and J. D. Wynn, Appl. Phys. Lett. 65, 145, 1994.
126. "Dielectrically-Bonded Long Wavelength Vertical Cavity Laser on GaAs Substrates Using Strained-Compensated Multiple Quantum Wells", C. L. Chua, C. H. Lin, Z. H. Zhu, Y. H. Lo, M. Hong, J. P. Mannaerts, and R. Bhat, IEEE Photonics Technol. Lett. V 6, No. 12, 1400, 1994.
127. "Ga2O3 Films for Electronic and Optoelectronic Applications", M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. G. Chu, K. Konstadinidis, J. P. Mannaerts, M. L. Schnoes, and G. J. Zydzik, J. Appl. Phys. 77, p.686, 1995.
128. "New Frontiers of Molecular Beam Epitaxy with In-Situ Processing", M. Hong, invited paper for the 1994 international MBE Conference and published in J. Crystal Growth V.150, pp.277-284, 1995.
129. "X-Ray Scattering Studies of the Interfacial Structure of Au/GaAs", D. Y. Noh, Y. Hwu, H. K. Kim, and M. Hong, Phys. Rev. B51 (7), p.4441, 1995.
130. "In-situ Fabricated Ga2O3-GaAs Structures with Low Interface Recombination Velocity", M. Passlack, M. Hong, E. F. Schubert, J. Kwo, J. P. Mannaerts, S. N. G. Chu, N. Moriya, and F. A. Thiel, Appl. Phys. Lett. 66, 625, 1995.
131. "Coherent Oscillations in Semiconductor Microcavities", Hailin Wang, J. Shah, T. C. Damen, W. Y. Jan, J. E. Cunningham, M. Hong, and J. P. Mannaerts, Phys. Rev. B51(20), 14, 713, May 15-II, 1995.
132. "Room Temperature Optical Absorption Characteristics of GaAs/AlGaAs MQW Structure Under External Anisotropic Strain", M. F. Huang, E. Garmire, A. Partovi, and M. Hong, Appl. Phys. Lett. 66, 736, 1995.
133. "Ga2O3 Films for Insulator/III-V Semiconductor Interfaces", M. Passlack, M. Hong, E. F. Schubert, J. P. Mannaerts, W. S. Hobson, N. Moriya, J. Lopata, and G. J. Zydzik, Institute of Physics Conference Series Number 141, Chapter 5, p. 597, 1995. Presented at 21st International Symposium on Compound Semiconductors (Successor to International Symposium on GaAs and related compounds) 1994.
134. "Record Low Resistance Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy Under Hybrid Mirror Approach", M. Hong, D. Vakhshoori, J. P. Mannaerts, and F. A. Thiel, Institute of Physics Conference Series Number 141, Chapter 5, p. 543, 1995. Presented at 21st International Symposium on Compound Semiconductors (Successor to International Symposium on GaAs and related compounds) 1994.
135. "Low Resistivity Vertical Cavity Surface Emitting Lasers Grown by MBE using Sinusoidal-Composition Grading in Mirrors and In-Situ Nonalloyed Ohmic Contacts", M. Hong, D. Vakhshoori, J. P. Mannaerts, and Y.-F. Hsieh, presented at 14th North American Conf. on MBE, J. Vac. Sci. Technol. B 13(2) Mar/Apr, p.758, 1995.
136. "Low Threshold 1.57 �慆 VC-SELs Using Strain-Compensated Quantum Wells and Oxide/Metal Backmirror", C. L. Chua, Z. H. Zhu, Y. H. Lo, R. Bhat, and M. Hong, IEEE Photonics Technol. Lett. Vol. 7, No. 5, 444, 1995.
137. "Nonlinear Polarization Switching in a Semiconductor Single Quantum Well Optical Amplifier", M.-S. Lin, D.-W. Huang, C. C. Yang, M. Hong, and Y.-K. Chen, Appl. Phys. Lett. 67(15), 2114, 1995.
138. "Demonstration of an Isolated Buried-channel Field-Effect Transistor Fabricated via in-situ patterned", A. P. Mills, M. Hong, J. P. Mannaerts, L. N. Pfeiffer, K. W. West, S. Martin, R. R. Ruel, K. W. Baldwin, and J. E. Rowe, J. Appl. Phys. 78 (10), 15 November, p. 6039, 1995.
139. "High-performance InGaAs photodetectors on Si and GaAs substrates", F. E. Ejeckam, C. L. Chua, Z. H. Zhu, Y. H. Lo, M. Hong, and R. Bhat, Appl. Phys. Letts. 67 (26), 3936, 1995.
140. Erratum: "Room Temperature Optical Absorption Characteristics of GaAs/AlGaAs MQW Structure Under External Anisotropic Strain", [Appl. Phys. Lett. 66, 736, 1995], M. F. Huang, E. Garmire, A. Partovi, and M. Hong, Appl. Phys. Lett. 67, 3983, 1995.
141. "Capacitance-Voltage and Current-Voltage Characterization of AlxGa1-xAs-GaAs Structures", M. Passlack, M. Hong, J. P. Mannaerts, T. H. Chiu, M. A. Mendonca, and J. C. Centanni, J. Appl. Phys. 78(12), pp. 7091-7098, 1995.
142. "Stain Relaxation in Fe3(Al,Si)/GaAs: An X-Ray Scattering Study", D. Y. Noh, M. Hong, Y. Hwu, J. H. Je, and J. P. Mannaerts, Appl. Phys. Lett. 68 (11), 1528, 1996.
143. "Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy", M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14(3), May/Jun, 2297, 1996.
144. "Quasi-static and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in-situ molecular beam epitaxy", M. Passlack, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 68(8), 1099, 1996.
145. "Recombination velocity at oxide-GaAs interfaces fabricated by in-situ molecular beam epitaxy", M. Passlack, M. Hong, J. P. Mannaerts, and L. W. Tu, Appl. Phys. Lett. 68(25), 3605, 1996.
146. "Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in-situ molecular beam epitaxy", M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, and F. Ren, Appl. Phys. Lett. 69(3), 302 1996.
147. "Observation of inversion layers at Ga2O3-GaAs interfaces fabricated by in-situ molecular beam epitaxy", M. Passlack, M. Hong, and J. P. Mannaerts, Electronics Letters, Vol.32, No.3, 267, 1st February, 1996.
148. "C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/ accumulation device and surface passivation applications", M. Passlack, M. Hong, and J. P. Mannaerts, Solid-State Electronics Vol. 39, No. 8, pp. 1133-1136, 1996.
149. "GaAs Surface Passivation Using In-Situ Oxide Deposition", M. Passlack, M. Hong, R. L. Opila, J. P. Mannaerts, and J. Kwo, Applied Surface Science, vol. 104-105, pp. 441-447, 1996. (ICFSI 1995 at Princeton.)
150. "Coupled in-plane and vertical cavity laser 1xN routing switches", D. B. Shire, C. L. Tang, and M. Hong, IEEE Photonics Technology Letters, Vol.8, No.11, pp. 1537-1539, 1996.
151. "In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric", L. W. Tu, E. F. Schubert, M. Hong, and G. J. Zydzik, J. Appl. Phys. 80 (11), 6448, 1 December 1996.
152. "A Ga2O3 passivation technique compatible with GaAs device processing", M. Hong, M. Passlack, J. P. Mannaerts, T. D. Harris, M. L. Schnoes, R. L. Opila, and H. W. Krautter, Solid State Electronics, Vol. 41, pp. 643-646, 1997.
153. "Low Dit thermodynamically stable Ga2O3-GaAs interfaces: fabrication, characterization, and modeling", M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, R. L. Opila, S. N. G. Chu, N. Moriya, and F. Ren, IEEE Transaction of Electron Devices, 44 No. 2, 214-225, 1997.
154. "Novel Ga2O3(Gd2O3) passivation techniques to produce low Dit oxide-GaAs interfaces", M. Hong, J. P. Mannaerts, J. E. Bowers, J. Kwo, M. Passlack, W-Y. Hwang, and L. W. Tu, J. Crystal Growth, 175/176, pp.422-427, 1997.
155. "Long wavelength resonant vertical cavity LED/photodetector with a 75 nm tuning range", G. L. Christenson, A. T. T. D. Tran, Z. H. Zhu, Y. H. Lo, M. Hong, J. P. Mannaerts, and R. Bhat, IEEE Photonics Technology Letters, vol.9, no.6, p.725, 1997.
156. "Advancing metal-oxide-semiconductor theory: steady-state nonequilibrium conditions", M. Passlack, M. Hong, E. F. Schubert, G. J. Zydzik, J. P. Mannaerts, W. S. Hobson, and T. D. Harris, J. Appl. Phys., vol. 81(11)7647, 1 June 1997.
157. "Wet chemical and plasma etching of Ga2O3(Gd2O3)", F. Ren, M. Hong, J. P. Mannaerts, J. R. Lothian, and A. Y. Cho, J. Electr. Chem. Soc., v.144, p.L239, 1997.
158. "Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3 (Gd2O3) as gate oxide", F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, Solid State Electronics, 41 (11), p.1751, 1997.
159. "Growth of Ga2O3(Gd2O3) using molecular beam epitaxy techniques - Key to first demonstration of GaAs MOSFETs", M. Hong, F. Ren, W. S. Hobson, J. M. Kuo, J. Kwo, J. P. Mannaerts, J. R. Lothian, M. A. Marcus, C. T. Liu, A. M. Sergent, T. S. Lay, and Y. K. Chen, INSTITUTE OF PHYSICS CONFERENCE SERIES 156, 319-324 1998. (Invited paper at 24th IEEE International Symposium on Compound Semiconductors, IOP series 97TH8272, Bristol and Philadelphia, 1997, pp. 319-324.)
160. "Characterization of the interfacial electronic properties of oxide films on GaAs fabrication by in-situ molecular beam epitaxy", J. S. Hwang, W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong, J. P. Mannaerts, and J. Kwo, INSTITUTE OF PHYSICS CONFERENCE SERIES 156, 249-253 1998. (pp. 249-253, IOP series 97TH8272, Bristol and Philadelphia, 1997. (Based on a contributed paper given at 1997 24th IEEE International Symposium on Compound Semiconductors))
161. "Insulator passivation of In0.2Ga0.8As-GaAs surface quantum wells", M. Passlack, M. Hong, T. D. Harris, J. P. Mannaerts, D. Vakhshoori, and M. L. Schnoes, IEEE J. of Quantum Electronics, Vol. 34, No. 2, pp.307-310, 1998.
162. "Oxide-GaAs Interfacial electronic properties characterized by modulation spectroscopy of photoreflectance", J. S. Hwang, S. L. Tyan, Y. C. Wang, W. Y. Chou, M. Hong, J. Kwo, and J. P. Mannaerts, J. Appl. Phys., 83 (5), pp.2857-9, (1 March) 1998.
163. "Structural properties of Ga2O3(Gd2O3)-GaAs interfaces", M. Hong, M. A. Marcus, J. Kwo, J. P. Mannaerts, A. M. Sergent, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sci. Technol. B16(3), p.1395, 1998.
164. "Depletion mode GaAs MOSFETs with of Ga2O3(Gd2O3) as gate oxide", M. Hong, F. Ren, J. M. Kuo, W. S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian, and Y. K. Chen, J. Vac. Sci. Technol. B16(3), p.1398, 1998.
165. "A Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET", F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J. R. Lothian, J. Lin, H. S. Tsai, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, V. 19, No. 8, p. 309, 1998.
166. "GaAs MOSFET using MBE grown Ga2O3(Gd2O3) as gate oxide", S. J. Kim, J. W. Park, M. Hong, and J. P. Mannaerts, IEE Proc. - Circuits Devices Syst., Vol. 145, No. 3, p. 162, June, 1998.
167. "NaCl:OH- color center laser modelocked by a novel bonded saturable Bragg reflector", E. J. Mozdy, M. A. Jaspan, Z. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and M. Hong, Optics Communications 151, pp. 62-64, 1998.
168. "Effects of temperature on Ga2O3(Gd2O3)/GaN metal oxide semiconductor field effect transistors", F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, M. J. Schurman, A. Baca S. J. Pearton, and C. R. Abernathy, Appl. Phys. Lett., 73, 3893-3895, 1998.
169. "Epitaxial cubic Gd2O3 as a dielectric for GaAs passivation", M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science, 283, pp.1897-1900, 1999.
170. "Passivation of GaAs using Gallium-Gadolinium Oxides", J. Kwo, D. W. Murphy, M. Hong, J. P. Mannaerts, R. L. Opila, R. L. Masaitis, and A. M. Sergent, J. Vac. Sci. Technol. B 17 (3), May/june, pp.1294-1296, 1999. (The paper was presented at 17th North American MBE Conf. Oct.4-7, 1998 at Penn State University.)
171. "Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics", F. Ren, C. R. Abernathy, J. D. MacKenzie, B. P. Gila, S. J. Pearton, M. Hong, M. A. Marcus, M. J. Schurman, A. G. Baca, and R. J. Shul, Solid-State Electronics, 42, No. 12, pp. 2177-2181, 1998.
172. "Ga2O3(Gd2O3)/GaAs Power MOSFET's", Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, H. S. Tsai, J. Kwo, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, Electronics Letters, Vol. 35, No. 8, 667, April 15th 1999.
173. "Passivation of GaAs using (Ga2O3)1-x(Gd2O3)x (x=0 - 1.0) films", J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, R. L. Masaitis, and A. M. Sergent, Appl. Phys. Lett., 75, p.1116, 1999.
174. "Structure of epitaxial Gd2O3 films grown on GaAs (100)", A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, and N. Kopylov, Phys. Rev. B60, 10913, 1999.
175. "GaN metal oxide semiconductor field effect transistors", F. Ren, S. J. Pearton, C. R. Abernathy, A. Baca, P. Cheng, R. J. Shul, S. N. G. Chu, M. Hong, J. R. Lothian, and M. J. Schurman, Solid-State Electronics 43, 1817-1920, 1999.
176. "Demonstration of sub-micron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis", Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, 20, pp. 457-459, 1999.
177. "Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates", B. Bolliger, M. Erbudak, M. Hong, J. Kwo, A. R. Kortan, and J. P. Mannaerts, Surface and Interface Analysis, 30, p. 514, 2000. (The paper was presented at the 8th European Conf. Proc. On Application of Surface and Interface Analysis, Oct. 4-8, Svelle, Spain, 1999.)
178. "Initial growth of Ga2O3(Gd2O3) on GaAs - key to the attainment of a low Interfacial density of states" M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng, Appl. Phys. Lett. 76 (3), p. 312, 2000.
179. "Neutron Scattering on Magnetic Thin Films: Pushing the Limits", A. Schreyer, T. Schmitte, R. Siebrecht, H. Zabel, S. H. Lee, R. W. Erwin, J. Kwo, M. Hong, and C. F. Majkrzak, J. Appl. Phys. 87 (9), pp.5443-5448, 2000. (An invited paper presented at the 44th Annual Conference on Magnetism and Magnetic Materials, San Jose, Nov. 15-18, 1999. )
180. "Temperatural dependence of photoluminescence on MBE grown Ga2O3(Gd2O3)/GaAs", L. W. Tu, Y. C. Lee, K. H. Lee, C. M. Lai, I. Lo, K. Y. Hsieh, and M. Hong, Appl. Phys. Lett. 75 (14), 2038, 1999.
181. "Characteristics of Ga2O3(Gd2O3)/GaAs Interface - Structures and Compositions" M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, J. J. Krajewski, Z. H. Lu, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sci. Technol. B18, 1688, 2000. (The paper was presented at 18th NAMBE)
182. "Properties of Ga2O3(Gd2O3)/GaN MIS Diodes", M. Hong, K. A. Anselm, J. P. Mannaerts, J. Kwo, A. Y. Cho, A. R. Kortan, C. M. Lee, J. I. Chyi, and T. S. Lay, J. Vac. Sci. Technol. B18, 1453, 2000. (presented at 18th NAMBE)
183. "High k gate dielectric Gd2O3 and Y2O3 for Si", J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia, Appl. Phys. Lett. 77 (1), p.130, 2000.
184. "Extended x-ray absorption fine structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001)", E. J. Nelson, J. C. Woicik, M. Hong, J. Kwo, and J. P. Mannaerts, Appl. Phys. Lett. 76 (18), p.2526, 2000.
185. "Structural modifications of the Gd2O3 (110) films on GaAs (100)", C. Steiner, B. Bolliger, M. Erbudak, M. Hong, A. R. Kortan, J. Kwo, and J. P. Mannaerts, Phys. Rev. B rapid communications, 62, No.16, R10614, 15 October, 2000.
