Publication(2012-2020)
Google Scholar - M.Hong
https://scholar.google.com.tw/citations?hl=zh-TW&user=SPy33uAAAAAJ&view_op=list_works&citft=1&citft=2&citft=3&email_for_op=gary0989294926%40gmail.com&sortby=pubdate
2020
1.Low-temperture grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission; YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, MH Hong, TW PiApplied Physics Express,2020 June
2.Topological insulator interfaced with ferromagnetic insulators: Bi2Te3 thin films on magnetite and iron garnets; VM Pereira, VM Pereira, SG Altendorf, CE Liu, SC Liao, AC Komarek, M Guo, H-J Lin, CT Chen, M. Hong, J. Kwo, LH Tjeng, CN Wu,Physical Review Materials 4 (6), 064202,2020 June
3.Electronic structure of topological insulator Bi2Se3 thin films on thulium iron garnet heterostructures; SW Huang, KY Lin, CC Chen, M Guo, CK Cheng, CM Cheng, M Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March
4.Evolution of the band structure of α-Sn (001) thin film on InSb (001); Ko-Hsuan Chen, Keng-Yung Lin, Sheng-Wen Huang, Chao-Kai Cheng, Hsiao-Yu Lin, Shang-Wei Lien, Tay-Rong Chang, Cheng-Maw Cheng, Minghwei Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March
5.Band structure study of elemental topological material α-Sn on InSb (111) B; Keng-Yung Lin, Ko-Hsuan Chen, Sheng-Wen Huang, Chao-Kai Cheng, Cheng-Maw Cheng, Minghwei Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March
6.Topological insulator interfaced with ferromagnetic insulators: Bi2Te3 thin films on magnetite and iron garnets; Chi-Nan Wu, Vanda Pereira, Simone Altendorf, Sheng-Chieh Liao, Cheng-En Liu, Alexander Komarek, Mengxin Guo, Hong-Ji Lin, Chien-Te Chen, Minghwei Hong, Jueinai Kwo, Liu Tjeng, Bulletin of the American Physical Society 65, 2020 March
7.Magneto-transport properties of bulk-insulating topological insulators (Bi,Sb)2Te3 on thulium iron garnets; Chun-Chia Chen, Shang Rong Yang, Yu-Ting Fanchiang, Wei-Jhih Zou, Mengxin Guo, Chao-Kai Cheng, Sheng-Wen Huang, Keng-Yung Lin, Ko-Hsuan Chen, Minghwei Hong, Jueinai Kwo, Bulletin of the American Physical Society 65, 2020 March
8.Thermal effect in Pt/YIG heterostructure induced by direct microwave power injection; Yu-Chi Liu, Chi-Nan Wu, Liang-Juan Chang, Yu-Ting Fanchiang, Chun-Chih Tseng, Minghwei Hong, Shang-Fan Lee, Jueinai Kwo, Journal of Physics D: Applied Physics 53 (12), 125002, 2020 January
2019
1. S. R. Yang, Y. T. Fanchiang, C. C. Chen, C. C. Tseng, Y. C. Liu, M. X. Guo, M. Hong,
S. F. Lee, J. Kwo (2019, Jul). Evidence for exchange Dirac gap in magnetotransport of
topological insulator-magnetic insulator heterostructures. Physical Review B,
100 (4), 045138.
2. K. Y. Lin, H. W. Wan, K. H. M. Chen, Y. T. Fanchiang, W. S. Chen, Y. H. Lin, Y. T. Cheng,
C. C. Chen, H. Y. Lin, L. B. Young, C. P. Cheng, T. W. Pi, J. Kwo, M. Hong (2019, Apr).
Molecular beam epitaxy, atomic layer deposition, and multiple functions
connected via ultra-high vacuum. Journal of Crystal Growth, 512, 223-229.
本人 為通訊作者.
3. Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Jueinai Kwo, Minghwei
Hong, Tun-Wen Pi (2019, Apr). Microscopic Views of Atomic and Molecular
Oxygen Bonding with epi Ge (001)-2× 1 Studied by High-Resolution
Synchrotron Radiation Photoemission. Nanomaterials, 9 (4), 554.
4. Lawrence Boyu Young, Chao-Kai Cheng, Keng-Yung Lin, Yen-Hsun Lin, HsienWen Wan, Ren-Fong Cai, Shen-Chuan Lo, Mei-Yi Li, Chia-Hung Hsu, Jueinai
Kwo, Minghwei Hong (2019, Mar). Epitaxy of High-Quality Single-Crystal
Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer
Deposition. Crystal Growth & Design, 19 (4), 2030-2036. 本人為通訊作者.
5. C. C. Chen, K. H. M. Chen, Y. T. Fanchiang, C. C. Tseng, S. R. Yang, C. N. Wu,
M. X. Guo, C. K. Cheng, S. W. Huang, K.Y. Lin, C. T. Wu, M. Hong, and J. Kwo
(2019, Jan). Topological insulator Bi2Se3 films on rare earth iron garnets and
their high-quality interfaces. Applied Physics Letters, 114 (3), 031601.
2018
6. Wei-Rein Liu, Wei-Lun Huang, Yung-Chi Wu, Liang-Hsun Lai, Chia-Hung Hsu,
Wen-Feng Hsieh, Tsung-Hung Chiang, HW Wan, M Hong, J Kwo (2018, Oct).
Correction to Exciton Localization of High-Quality ZnO/MgxZn1-xO Multiple
Quantum Wells on Si (111) with a Y2O3 Buffer Layer. ACS Applied Nano
Materials, 1 (10), 5958-5958.
7. Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Jueinai Kwo, Minghwei
Hong, Tun-Wen Pi (2018, Oct). Atom-to-atom interaction of O2 with epi Ge
(001)-2× 1 in elucidating GeOx formation. Applied Physics Express, 11 (11),
115701.
8. C.-P. Cheng, W. S. Chen, Y. T. Cheng, H. W. Wan, K. Y. Lin, L. B. Young, C. Y.
Yang, T. W. Pi, J. Kwo, M. Hong (2018, Aug). In situ direct determination of
band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type
GaAs(001)-4×6 surface. J. Phys. D: Appl. Phys. , 51, 405102. 本人為通訊作者.
9. C. N. Wu, C. C. Tseng, Y. T. Fanchiang, C. K. Cheng, K. Y. Lin, S. L. Yeh, S. R.
Yang, C. T. Wu, T. Liu, M. Wu, M. Hong, and J. Kwo (2018, Jul). High-quality
thulium iron garnet films with tunable perpendicular magnetic anisotropy by offaxis sputtering - correlation between magnetic properties and film strain.
Scientific Reports, 8, 11087. MOST 105-2112-M-007-014-MY3.
10. Wei-Rein Liu, Wei-Lun Huang, Yung-Chi Wu, Liang-Hsun Lai, Chia-Hung Hsu,
Wen-Feng Hsieh, Tsung-Hung Chiang, HW Wan, M Hong, J Kao (2018, Jul).
Exciton Localization of High-Quality ZnO/MgxZn1-xO Multiple Quantum
Wells on Si (111) with a Y2O3 Buffer Layer. ACS Applied Nano Materials, 1 (8),
3829-3836.
11. H. Y. Lin, C. K. Cheng, K. H. M. Chen, C. C. Tseng, S. W. Huang, M. T. Chang,
S. C. Tseng, M. Hong, and J. Kwo (2018, Jun). A new stable, crystalline capping
material for topological insulators. APL Materials, 6, 066108. MOST 105-2112-
M-007-014-MY3.
12. C. -P. Cheng, W. S. Chen, Y. T. Cheng, H. W. Wan, C. Y. Yang, T. W. Pi, J. Kwo,
and M. Hong (2018, Jan). Atomic Nature of the Growth Mechanism of Atomic
Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in-situ Synchrotron
Radiation Photoelectron Spectroscopy. ACS Omega, 3, 2111. 本人 為通訊作者.
13. C. N. Wu, C. C. Tseng, K. Y. Lin, C. K. Cheng, S. L. Yeh, Y. T. Fanchiang, M.
Hong, and J. Kwo (2018, Jan). "High-quality single-crystal thulium iron garnet
films with perpendicular magnetic anisotropy by off-axis sputtering". AIP
Advances, 8, 055904.
14. Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N.
Wu, S. F. Lee, M. Hong, J. Kwo (2018, Jan). Strongly exchange-coupled and
surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures. Nature Communications, 9(1), 223. MOST 105-2112-M-007-014-MY3.
2017
15. H. W. Wan, K. Y. Lin, C. K. Cheng, Y. K. Su, W. C. Lee, C. H. Hsu, T. W. Pi, J.
Kwo, M. Hong (2017, Nov). GaAs Metal-Oxide-Semiconductor Push with
Molecular Beam Epitaxy Y2O3 - in comparison with atomic layer deposited
Al2O3. J. Crystal Growth, 477, 179-182. 本人為通訊作者.
16. M. Hong, H. W. Wan, P. Chang, T. D. Lin, Y. H. Chang, W. C. Lee, T. W. Pi, and
J. Kwo (2017, Nov). Effective Surface Passivation of In0.53Ga0.47As(001)
using molecular beam epitaxy and atomic layer deposited HfO2 - a comparative
study. J. Crystal Growth, 477, 159-163. 本人為第一作者.
17. Y. H. Lin, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi,
J. Kwo, M. Hong (2017, Nov). Interfacial Characteristics of Y2O3/GaSb(001)
Grown by Molecular Beam Epitaxy and Atomic Layer Deposition. J. Crystal
Growth, 477, 164-168. 本人為通訊作者.
18. M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin,
T. W. Pi, and J. Kwo (2017, Sep). "Perfecting the Al2O3/In0.53Ga0.47As
interfacial electronic structure in pushing metal-oxide-semiconductor fieldeffect-transistor device limits using in-situ atomic-layer-deposition". Appl. Phys.
Lett., 111, 123502. 本人為第一作者.
19. K. H. M. Chen (陳可璇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), C. K. Cheng
(鄭兆凱), X. Q. Zhang (張鋅權), C. M. Cheng (鄭澄懋), S. F. Lee (李尚凡), C.
H. Hsu (徐嘉鴻), Y. H. Lee (李奕賢), M. Hong (洪銘輝), and J. Kwo (郭瑞年)
(2017, Aug). Van der Waals epitaxy of topological insulator Bi2Se3 on single
layer transition metal dichalcogenide MoS2. Appl. Phys. Lett., 111, 083106.
20. Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N.
Wu, S. F. Lee, M. Hong, J. Kwo (2017, Aug). Strongly exchange-coupled and
surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures. arXiv:1708.00593. (Accepted).
21. C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T.
Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong (2017, Jun).
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001)
using atomic layer deposition. Microelectronic Engineering, 178, 125-127. 本人 為通訊作者.
22. Y. T. Cheng, Y. H. Lin, W. S. Chen, K. Y. Lin, H. W. Wan, C.-P. Cheng, H. H.
Cheng, J. Kwo, M. Hong (2017, Jun). Surface electronic structure of epi
germanium (001)-2x1. Appl. Phys. Express 10, DOI: 10.7567/APEX.10.075701. 本人為通訊作者.
23. K. Y. Lin, L. B. Young, C. K. Cheng, K. H. Chen, Y. H. Lin, H. W. Wan, R. F.
Cai, S. C. Lo, M. Y. Li, J. Kwo, M. Hong (2017, May). Enhancement of
dielectric constant using high-temperature mixed and sub-nano-laminated atomic
layer deposited Y2O3/Al2O3 on GaAs(001). Microelectronic Engineering, 178,
271-274. (Accepted). 本人為通訊作者.
24. T. W. Chang, K. Y. Lin, Y. H. Lin, L. B. Young, J. Kwo, M. Hong (2017, Apr).
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via
electrical responses - a comparative study. Microelectronic Engineering, 178,
199-203. (Accepted). 本人為通訊作者.
25. H. W. Wan, Y. H. Lin, K. Y. Lin, T. W. Chang, J. Kwo, M. Hong (2017, Mar).
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001)
interface. Microelectronic Engineering, 178, 154-157. 本人為通訊作者.
26. T. W. Pi (皮敦文), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), Y. T. Cheng (鄭伊 婷), G. J. Wei (魏國珍), K. Y. Lin (林耕雍), C. -P. Cheng (鄭秋平), J. Kwo (郭瑞年), and M. Hong (洪銘輝) (2017, Mar). Relevance of GaAs(001) surface
electronic structure for high frequency dispersion on n-type accumulation
capacitance. Appl. Phys. Lett. , 110, 052107 (2017). doi: 10.1063/1.4975479.
(Accepted). 本人為通訊作者.
27. W.-J. Hsueh, P.-C. Chiu, M.-H. Hong, and J.-I. Chyi (2017, Mar). Suppressing
Ge Diffusion by GaAsSb for Molecular Beam Epitaxy of InGaAs on Ge.
Physica Status Solidi B, 600589 (2017). Doi: 10.1002/pssb.20160058.. 本人為通 訊作者.
28. Chiu-Ping Cheng, Wan-Sin Chen, Keng-Yung Lin, Guo-Jhen Wei, Yi-Ting
Cheng, Yen-Hsun Lin, Hsien-Wen Wan, Tun-Wen Pi, Raymond T. Tung, Jueinai
Kwo, and Minghwei Hong (2017, Jan). Atomic nature of the Schottky barrier
height formation of the Ag/GaAs(001)-2×4 interface: an in-situ synchrotron
radiation photoemission study. Applied Surface Science, 393, 294-298. (SCI,
27/145 PHYSICS, APPLIED). MOST 104-2112-M-415-006. 本人為通訊作者.
29. L. B. Young, C. K. Cheng, G.J. Lu, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R.
F. Cai, S. C. Lo, C. H. Hsu, J. Kwo, M. Hong (2017, Jan). Atomic layer
deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
35(1), 01B123. (SCI, 65/145 PHYSICS, APPLIED). MOST 105-2112-M-002-
022. 本人為通訊作者.
2016
30. Ja-Hon Lin, Yu-kai Shen, Wei-Rein Liu, Chia-Hui Lu, Yao-Hui Chen, Chun-peng
Chang, Wei-Chin Lee, Minghwei Hong, J. R. Kwo, C. Hsu, and Wen-Feng Hsieh
(2016, Jul). Coherent acoustic phonon oscillation accompanied with backward
acoustic pulse below exciton resonance in a ZnO epi-film on oxide-buffered
Si(111). Journal of Physics D: Applied Physics, 49, 325102-325106 . (SCI,
31/145 PHYSICS, APPLIED). NSC 102-2112-M-027-001-MY3.
31. Y. H. Lin, C.-H. Fu, K.-Y. Lin, K.-H. Chen, T.-W. Chang, J. R. Kwo, and M.
Hong (2016, Jul). Low interfacial trap density and high-temperature thermal
stability in atomic-layer-deposited single crystal Y2O3/n-GaAs(001). Applied
Physics Express , 9, 081501. (SCI, 41/145 PHYSICS, APPLIED). MOST 102-
2112-M-002-022-MY3. 本人為通訊作者.
32. C. Y. Wang, H. Y. Lin, S. R. Yang, K. H. M. Chen, Y. H. Lin, K. H. Chen, L. B.
Young, C. K. Cheng, Y. T. Fanchiang, S. C. Tseng, M. Hong, and J. Kwo (2016,
May). Demonstration of large field effect in topological insulator films via a
high-kappa back gate. Appl. Phys. Lett., 108, 202403. (SCI, 28/145 PHYSICS,
APPLIED). MOST 102-2112-M-007-010-MY3. 本人為通訊作者.
2015
33. C.H. Fu, Y.H. Lin, W.C. Lee, T.D. Lin, R.L. Chu, L.K. Chu, P. Chang, M.H.
Chen, W.J. Hsueh, S.H. Chen, G.J. Brown, J.I. Chyi, J. Kwo, and M. Hong
(2015, Nov). Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge
MOSFETs with a common high k gate dielectric using a CMOS compatible
process. Microelectronic Engineering, 147, 330-334. (SCI, 91/145 PHYSCIS,
APPLIED). MOST 102-2112-M-002-022-MY3. 本人為通訊作者.
34. S.Y. Wu, K.H. Chen, Y.H. Lin, C.K. Cheng, C.H. Hsu, J. Kwo, M. Hong (2015,
Nov). Single-crystal atomic layer deposited Y2O3 on GaAs(001) - growth,
structural, and electrical characterization. Microelectronic Engineering, 147,
310-313. (SCI, 91/145 PHYSICS, APPLIED). NSC 102-2112-M-002-022-MY3. 本人為通訊作者.
35. Y. T. Fanchiang, T. H. Chiang, T. W. Pi, G. K. Wertheim, J. Kwo, and M. Hong
(2015, Nov). Reconstruction at the interface of one cycle of trimethylaluminum
and water on GaAs(111)A-2x2 from atomic layer deposition. Applied Physics
Express, 8, 126602. (SCI, 41/145 PHYSICS, APPLIED). MOST 102-2112-M002-022-MY3. 本人為通訊作者.
36. Y. H. Lin, C. K. Cheng, K. H. Chen, C. H. Fu, T. W. Chang, C. H. Hsu, J. Kwo,
and M. Hong (2015, Oct). Single-crystal Y2O3 epitaxially on GaAs(001) and
(111) using atomic layer deposition. Materials, 8(10), 7084-7093. (SCI, 63/271
MATERIALS SCIENCE, MULTIDISCIPLINARY). MOST 102-2112-M-002-
022-MY3. 本人為通訊作者.
37. Y. C. Liu, Y. W. Chen, S. C. Tseng, M. T. Chang, S. C. Lo, Y. H. Lin, C. K.
Cheng, H. Y. Hung, C. H. Hsu, J. Kwo*, and M. Hong* (2015, Sep). Epitaxial
ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and
interface. Appl. Phys. Lett., 107, 122402. (SCI, 28/145 PHYSICS, APPLIED).
MOST 102-2112-M-002-022-MY3. 本人為通訊作者.
38. C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin,
S. F. Lee, M. Hong*, and J. Kwo* (2015, Apr). Strongly enhanced spin current in
topological insulator/ferromagnetic metal heterostructures by spin pumping.
Journal of Applied Physics, 117, 17D148. 本人為通訊作者.
39. T. W. Pi*, Y. H. Lin, Y. T. Fanchiang, T. H. Chiang, C. H. Wei, Y. C. Lin, G. K.
Wertheim, J. Kwo*, and M Hong* (2015, Mar). In-situ atomic layer deposition
of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces:
electronic and electric structures. Nanotechnology, 26, 164001. 本人為通訊作
者.
2014
40. R. L. Chu, T. H. Chiang, W. J. Hsueh, K. H. Chen, K. Y. Lin, G. J. Brown, J. I.
Chyi, J. Kwo , and M. Hong (2014, Nov). Passivation of GaSb using molecular
beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance
self-aligned inversion-channel p-metal-oxide-semiconductor field-effecttransistors. Appl. Phys. Lett. , 105, 182106. (SCI, 20/136 Physics, Applied).
MOST 102-2112-M-002-022-MY3. 本人為通訊作者.
41. H. Y. Hung, T. H. Chiang, B. Z. Syu, Y. T. Fanchiang, J. G. Lin, S. F. Lee, M.
Hong, and J. Kwo (2014, Oct). Observation of Strongly Enhanced Inverse Spin
Hall Voltage in Fe3Si/GaAs Structures. Appl. Phys. Lett., 105, 152413. (SCI,
20/136 Physics, Applied). MOST 102-2112-M-007-010-MY3. 本人為通訊作者.
42. Tsung-Hung Chiang, Shao-Yun Wu, Tsung-Shiew Huang, Chia-Hung Hsu, J.
Raynien Kwo, and Minghwei Hong (2014, Sep). Single crystal Gd2O3
epitaxially on GaAs(111)A. CrystEngComm, 16, 8457-8462. (SCI, 4/23
Crystallography). MOST 102-2122-E-002-014. 本人為通訊作者.
43. Heike Riel, Lars-Erik Wernersson, Minghwei Hong, Jesús A. del Alamo (2014,
Aug). III-V Compound Semiconductor Transistors - From Planar to Nanowire
Structures. MRS Bulletin, 39 668-677. (SCI, 27/251 MATERIALS SCIENCE,
MULTIDISCIPLINARY). MOST 102-2622-E-002-014. 本人為通訊作者.
44. R. L. Chu, Y. C. Liu, W. C. Lee, T. D. Lin, M. L. Huang, T. W. Pi, J. Kwo, and
M. Hong (2014, May). Greatly improved interfacial passivation of in-situ high
dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer
on Ge(100). Appl. Phys. Lett., 104(20), 202102. (SCI, 20/136 Physics, Applied).
MOST 102-2112-M-002-022-MY3. 本人為通訊作者.
45. W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong (2014, Apr).
High k/InGaAs for ultimate CMOS - interfacial passivation, low ohmic contacts,
and device performance (Invited). ECS Transactions, 61(2), 113-124. 本人為通 訊作者.
46. T. W. Pi, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo, and M.
Hong, (2014, Jan). Synchrotron radiation photoemission study of interfacial
electronic structure of HfO2 on In0.53Ga0.47As(001)-4x2 from atomic layer
deposition. Appl. Phys. Lett., 104(4), 042904. (SCI, 20/136 Physics, Applied).
MOST 102-2112-M-002-022-MY3. 本人為通訊作者.
研討會論文
1. HW Wan, YJ Hong, LB Young, M Hong, J Kwo (2019, Mar). Fundamental
Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High
Thermal Stability. 2019 IEEE International Reliability Physics Symposium
(IRPS). 本人為通訊作者.
2. HW Wan, YJ Hong, YT Cheng, M Hong (2019, Mar). BTI Characterization of
MBE Si-capped Ge gate stack and defect reduction via forming gas annealing.
2019 IEEE International Reliability Physics Symposium (IRPS). 本人為通訊作 者.
3. M. Hong, Y. H. Lin, H. W. Wan, W. S. Chen, Y. T. Cheng, C.-P. Cheng, T. W. Pi,
and J. Kwo (2018, Oct). Interfacial perfection for pushing InGaAs and Ge MOS
device limits. 2018 IEEE 14th International Conference on Solid-State and
Integrated-Circuit Technology (ICSICT-2018), Qingdao, China. 本人為第一作 者、通訊作者.
4. C. C. Chen, K. H. M. Chen, H. Y. Lin, C. N. Wu, C. C. Tseng, Y. T. Fanchiang,
M. X. Guo, S. R. Yang, J. S. Wei, C. K. Cheng, C. H. Hsu, M. Hong, and J. Kwo
(2018, Sep). Attainment of high quality topological insulator Bi2Se3 thin films
grown on rare earth iron garnets. 20th International Conference on Molecular
Beam Epitaxy, Shanghai, China. 本人為通訊作者.
5. C. K. Cheng (鄭兆凱), C. C. Tseng (曾俊智), C. N. Wu (巫啟男), K. Y. Lin (林
耕雍), S. L. Yeh (葉松霖), Y. T. Fanchiang (范姜宇廷), C. H. Hsu (徐嘉鴻), J.
Kwo (郭瑞年), and M. Hong (洪銘輝) (2018, Sep). Stress-induced
perpendicular magnetic anisotropy in single crystal TmIG films. the 24th Users'
Meeting and Workshops, National Synchrotron Radiation Research Center,
Hsinchu, Taiwan. 本人為通訊作者.
6. H. W. Wan, W. S. Chen, L. B. Young, Y. H. Lin, T. W. Pi*, J. Kwo*, and M.
Hong* (2018, Sep). Interfacial anchoring of oxides on pristine GaAs for
achieving low Dit and high temperature thermal stability. 20th International
Conference on Molecular Beam Epitaxy, Shanghai, China. 本人為通訊作者.
7. K. H. M. Chen, H. Y. Lin, C. K. Cheng, K. Y. Lin, J. S. Wei, S. W. Huang, S. R.
Yang, Y. C. Liu, C. M. Cheng, C. H. Hsu, M. Hong, and J. Kwo (2018, Sep).
High quality topological material α-Sn thin film on InSb(001). 20th International
Conference on Molecular Beam Epitaxy, Shanghai, China. 本人為通訊作者.
8. L. B. Young (楊博宇), C. K. Cheng (鄭兆凱), K. Y. Lin (林耕雍), Y. H. Lin (林
延勳), H. W. Wan (萬獻文), R. F. Cai (蔡任豐), S. C. Lo (羅聖全), M. Y. Li (李
美儀), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞年), and M. Hong (洪銘輝) (2018,
Sep). Single-crystal ternary perovskite YAlO3 grown on GaAs and GaN:
overcoming a large lattice mismatch via a Y2O3 template. the 24th Users'
Meeting and Workshops, National Synchrotron Radiation Research Center,
Hsinchu, Taiwan. 本人為通訊作者.
9. M. Hong*, J. Kwo*, K. H. M. Chen, Y. T. Fanchiang, Y. H. Lin, H. W. Wan, K.
Y. Lin, W. S. Chen, Y. T. Cheng, L. B. Young, C. C. Chen, T. W. Pi, and C.-P.
Cheng (2018, Sep). MBE and multiple functions in-situ integrated via ultra-high
vacuum. 20th International Conference on Molecular Beam Epitaxy, Shanghai,
China. 本人為第一作者、通訊作者.
10. Shang-Fan Lee, YT Fanchiang, Minghwei Hong, J Kwo (2018, Sep). Exchange
coupling and magnetic proximity effect probed by ferromagnetic resonance in
topological insulator/ferromagnet bilayers (Conference Presentation). Spintronics
XI.
11. W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊博宇), Y. T. Cheng (鄭
伊婷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), C.-P.
Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)
(2018, Sep). ALD-Y2O3 on GaAs(001)-4×6 - an in-situ atomic-scale study of
growth mechanism using synchrotron radiation photoemission. the 24th Users'
Meeting and Workshops, National Synchrotron Radiation Research Center,
Hsinchu, Taiwan. 本人為通訊作者.
12. W. S. Chen, K. Y. Lin, Y. H. Lin, H. W. Wan, T. W. Pi*, J. Kwo*, and M. Hong*
(2018, Sep). Initial growth mechanism of MBE oxides on (In)GaAs investigated
by in-situ synchrotron radiation photoemission. 20th International Conference on
Molecular Beam Epitaxy, Shanghai, China. 本人為通訊作者.
13. Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), H. W. Wan (萬
獻文), K. Y. Lin (林耕雍), C.-P. Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭
瑞年), and M. Hong(洪銘輝) (2018, Sep). A unique surface electronic structure
of epi Ge(001)-2x1. the 24th Users' Meeting and Workshops, National
Synchrotron Radiation Research Center , Hsinchu, Taiwan. 本人為通訊作者.
14. C.-P. Cheng, W. S. Chen, Y. T. Cheng, L. B. Young, H. W. Wan, C. Y. Yang, K. Y.
Lin, T. W. Pi*, J. Kwo*, and M. Hong* (2018, Jul). Growth Mechanism of Highk Y2O3 on GaAs(001)-4×6 using in-situ Cycle-by-Cycle ALD and Synchrotron
Radiation Photoelectron Spectroscopy. 18th Intl. Conf. on Atomic Layer
Deposition, Incheon, South Korea. 本人為通訊作者.
15. L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo,
M. Y. Li, C. H. Hsu*, J. Kwo*, and M. Hong* (2018, Jul). Single-crystal Ternary
Perovskite YAlO3 Epitaxial Growth on GaAs and GaN via Y2O3 Template:
Overcoming a Large Film/Substrate Lattice Mismatch. 18th Intl. Conf. on
Atomic Layer Deposition, Incheon, South Korea. 本人為通訊作者.
16. S. R. Yang, C. C. Chen, C. C. Tseng, Y. T. Fanchiang, K. M. H. Chen, C. N. Wu,
C. K. Cheng, M. Hong*, and J. Kwo* (2018, Jul). Magnetic proximity effect
induced negative magnetoresistance in Bi2Se3/thulium iron garnet
heterostructures. the 23rd International Colloquium on Magnetic Films and
Surfaces (ICMFS-2018), UC Santa Cruz, CA. 本人為通訊作者.
17. Y. C. Liu, C. C. Chen, S. R. Young, L. J. Chang, S. F. Lee*, M. Hong* and J.
Kwo* (2018, Jul). Spin-orbit torque ferromagnetic resonance in transferredtopological insulator/normal metal/ferromagnetic metal heterostructure. 21st
International Conference on Magnetism, , San Francisco, CA. . 本人為通訊作 者.
18. Y. C. Liu, Y. T. Fanchiang, C. C. Tseng, C. C. Chen, J. G. Lin*, S. F. Lee*, M.
Hong*, and J. Kwo* (2018, Jul). Spin transport and spin-to-charge current
conversion in Bi2Se3/Au-based heterostructure. the 23rd International
Colloquium on Magnetic Films and Surfaces (ICMFS-2018) , UC Santa Cruz,
CA. 本人為通訊作者.
19. Y. T. Fanchiang, C. C. Tseng, Y. C. Liu, C. C. Chen, J. G. Lin*, S. F. Lee*, M.
Hong*, and J. Kwo* (2018, Jul). Spin transport and spin-to-charge current
conversion in Bi2Se3/Au heterostructure. 21st International Conference on
Magnetism, San Francisco, CA.. 本人為通訊作者.
20. C. C. Tseng, Y. C. Liu, C. C. Chen, S. R. Yang, Y. T. Fanchiang, C. K. Cheng, S.
F. Lee, J. G. Lin, M. Hong and J. Kwo (2018, May). Spin pumping in transferred
topological insulator on ferrimagnetic insulator and metal/ferrimagnetic
insulator. APS March meeting, Los Angeles, USA. 本人為通訊作者.
21. S. R. Yang, K. H. M. Chen, C. C. Chen, C. N. Wu, C. C. Tseng, C. K. Cheng, M.
Hong*, and J. Kwo* (2018, Mar). Time Reversal Symmetry Breaking in
Topological Insulator/Magnetic Insulator Heterostructures Revealed by the
Negative Magnetoresistance. APS March meeting, Los Angeles, USA. 本人為通 訊作者.
22. C. C. Chen, K. H. M. Chen, H. Y. Lin, C. N. Wu, C. C. Tseng, M. X. Guo, S. R.
Yang, J. S. Wei, C. K. Cheng, Y. T. Fanchiang, C. H. Hsu, M. Hong, and J. Kwo
(2018, Jan). The attainment of high quality topological insulator Bi2Se3 thin
films grown on ferromagnetic insulator garnets. 中華民國物理年會, National
Taiwan University, Taipei. 本人為通訊作者.
23. C. C. Tseng, Y. C. Liu, C. C. Chen, S. R. Yang, Y. T. Fanchiang, C. K. Cheng, S.
F. Lee, J. G. Lin, M. Hong and J. Kwo (2018, Jan). Ferromagnetic resonance and
spin pumping in transferred topological insulator on ferrimagnetic insulator
heterostructures. 中華民國物理年會, National Taiwan University, Taipei. 本人 為通訊作者.
24. C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo,
C. H. Hsu, J. Kwo, and M. Hong (2018, Jan). Epitaxy of single-crystal hexagonal
perovskite YAlO3 on Y2O3/GaAs(111)A. 中華民國物理年會, National Taiwan
University, Taipei. 本人為通訊作者.
25. C. Y. Yang, H. W. Wan, Y. H. Lin, J. Kwo, M. Hong (2018, Jan). 1000°C
Thermal Stability and Low Trap Densities Achieved in HfO2/GaAs(001). 中華 民國物理年會, National Taiwan University, Taipei. 本人為通訊作者.
26. H. W. Wan, T. W. Chang, K. Y. Lin, L. B. Young, J. Kwo, M. Hong (2018, Jan).
Comparative Study of Trap Response Inside Conduction Band of GaAs
Passivated with High Dielectric Constant Oxides of Y2O3 and HfO2. 中華民國 物理年會, National Taiwan University, Taipei. 本人為通訊作者.
27. J. H. Huang, H. W. Wan , C. Y. Yang, W. S. Chen, C. K. Cheng, Y. H. Lin , J.
Kwo* , M. Hong* (2018, Jan). Low interfacial trap densities and high thermal
stability of Y2O3 on p-In0.1Ga0.9As. 中華民國物理年會, National Taiwan
University, Taipei. 本人為通訊作者.
28. J. S. Wei, S. R. Yang, K. H. Chen, C. C. Chen, Y. H. Lin, L. B. Young, K. Y. Lin,
T. W. Chang, M. Hong, and J. Kwo (2018, Jan). Demonstration of Large Field
Effect in Topological Insulator Based Top-gating Device. 中華民國物理年會,
National Taiwan University, Taipei. 本人為通訊作者.
29. K. H. M. Chen, H. Y. Lin, K. Y Lin, C. K. Cheng, S. W. Huang, J. S. Wei, S. R.
Yang, C. M. Cheng, C. H. Hsu, M. Hong, and J. Kwo, (2018, Jan). High quality
α-Sn thin film on InSb(001). 中華民國物理年會, National Taiwan University,
Taipei. 本人為通訊作者.
30. L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. Kwo, M. Hong
(2018, Jan). Epitaxial Growth of Y2O3-doped High-K Cubic HfO2 on GaAs
Utilizing ALD-HfO2/Y2O3 Super-Cycles. 中華民國物理年會, National Taiwan
University, Taipei. 本人為通訊作者.
31. S. R. Yang, K. H. M. Chen, C. C. Chen, C. N. Wu, C. C. Tseng, C. K. Cheng, M.
Hong*, and J. Kwo* (2018, Jan). Time Reversal Symmetry Breaking in
Topological Insulator/Magnetic Insulator Heterostructures Revealed by the
Negative Magnetoresistance. 中華民國物理年會, National Taiwan University,
Taipei. 本人為通訊作者.
32. Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, S. R.
Yang, C. N. Wu, S. F. Lee, M. Hong, and J. Kwo (2018, Jan). Topological
surface states mediated interfacial exchange coupling in Bi2Se3/YIG. 中華民國 物理年會, National Taiwan University, Taipei. 本人為通訊作者.
33. K. Y. Lin, T. W. Chang, H. W. Wan, Y. J. Hong, L. B. Young, J. Kwo*, M. Hong*
(2017, Dec). Temperature-dependent barrier heights measured in high-k/GaAs -
elucidating capacitance- voltage frequency dispersion for proper determination
of border traps. 48th Semiconductor Interface Specialists Conference (SISC) ,
San Diego, CA, USA. 本人為通訊作者.
34. T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong (2017, Dec). Detailed understanding
of the atomic-layer deposited dielectric oxides and III-V and Ge interfaces: A
synchrotron radiation photoemission study. 2017 Global Research Efforts on
Energy and Nanomaterials (GREEN 2017), Asia Pacific Society for Materials
Research, Taipei, Taiwan. 本人為通訊作者.
35. C. N. Wu, C. C. Tseng, S. R. Yang, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T.
Fanchiang, M. Hong* and J. Kwo* (2017, Nov). High-Quality Single-Crystal
Thulium Iron Garnet Films with Tunable Perpendicular Magnetic Anisotropy by
Off-Axis Sputtering. 62th MMM conference, Pittsburg. 本人為通訊作者.
36. H. W. Wan, T. W. Pi, J. Kwo, M. Hong (2017, Nov). Tailoring interfacial quality
of Ge MOS by in-situ deposited high-k dielectrics. Helmholtz-Zentrum DresdenRossendorf (HZDR), Germany. 本人為通訊作者.
37. M. Hong (2017, Nov). Scientific elegance of perfecting oxide/ and metal/InGaAs
interfaces in pushing high-performance devices. Colloquium, HelmholtzZentrum Dresden-Rossendorf (HZDR), Germany. 本人為第一作者、通訊作者.
38. Y. H. Lin, C.-P. Cheng, T. W. Pi, J. Kwo, and M. Hong (2017, Nov). ALDY2O3/GaAs(001) - interfacial electrical, thermal, and structural characteristics.
Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany. 本人為通訊作者.
39. Y. T. Fanchiang, K. H. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N. Wu, S.
F. Lee*, M. Hong*, and J. Kwo* (2017, Nov). Strongly exchange-coupled and
surface-state-modulated magnetization dynamics in Bi2Se3/YIG
heterostructures. 62th MMM conference, Pittsburg. 本人為通訊作者.
40. W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊博宇), Y. T. Cheng (鄭
伊婷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), C.-P.
Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝)
(2017, Sep). Interface dipole of high-k Y2O3 on GaAs(001)-4×6 attained using
cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy. the
23rd Users' Meeting and Workshops, National Synchrotron Radiation Research
Center, Hsinchu, Taiwan. 本人為通訊作者.
41. Y. H. Lin, T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong (2017, Sep). Tailoring
oxide/high carrier mobility semiconductor interfaces-achieving scientific
elegance in pushing high-performance devices. 2017 Taiwan Oxide Forum,
National Chao-Tung Univ., Hsinchu, Taiwan. 本人為通訊作者.
42. Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊
博宇), Y. H. Lin (林延勳), H. W. Wan (萬獻文), T. W. Pi (皮敦文), C.-P. Cheng
(鄭秋平), J. Kwo (郭瑞年), and M. Hong (洪銘輝) (2017, Sep). Elucidation of
distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and
In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron
spectroscopy. the 23rd Users' Meeting and Workshops, National Synchrotron
Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.
43. J. Raynien Kwo, M. Hong, and S. F. Lee (2017, Jul). Spin transport in
topological insulator-based magnetic heterostructures. OCPA 9, Tsing Hua
University, Beijing, China. 本人為通訊作者.
44. K. Y. Lin, L. B. Young, C. K. Cheng, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, J.
Kwo, and M. Hong (2017, Jul). Great enhancement of dielectric constant via
high temperature annealing ALD bi-layered oxides. 17th Intl. Conf. on Atomic
Layer Deposition , Denver, Colorado, USA. 本人為通訊作者.
45. L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R. F. Cai,
S. C. Lo, C. H. Hsu, J. R. Kwo, and M. Hong (2017, Jul). Perfecting singlecrystal ternary perovskite YAlO3 epitaxial growth on GaAs(111)A utilizing
atomic layer deposited sub-nano-laminated Y2O3/Al2O3. 17th Intl. Conf. on
Atomic Layer Deposition, Denver, Colorado, USA. 本人為通訊作者.
46. L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. R. Kwo, and M.
Hong (2017, Jul). Atomic layer deposited single crystal high-k Y-doped cubic
HfO2 on GaAs(001) utilizing HfO2/Y2O3 super-cycles. 17th Intl. Conf. on
Atomic Layer Deposition, , Denver, Colorado, USA. 本人為通訊作者.
47. W. S. Chen, K. Y. Lin, L. B. Young, Y. T. Cheng, Y. H. Lin, H. W. Wan, C. Y.
Yang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong (2017, Jul). Interface dipole of
high-k Y2O3 on GaAs(001)-4x6 attained using cycle-by-cycle ALD and
synchrotron radiation photoelectron spectroscopy. 17th Intl. Conf. on Atomic
Layer Deposition, Denver, Colorado, USA. 本人為通訊作者.
48. Y. H. Lin, H. W. Wan, L. B. Young, C. K. Cheng, K. Y. Lin, Y. T. Cheng, W. S.
Chen, C. P. Cheng, T. W. Pi, J. R. Kwo, and M. Hong (2017, Jul). ALDY2O3/GaAs(001) having extremely high thermal stability at 900 °C and very
low interfacial trap densities - comparative studies with ALD Al2O3 and HfO2
gate dielectrics. 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado,
USA. 本人為通訊作者.
49. Y. T. Cheng, W. S. Chen, K. Y. Lin, L. B. Young, Y. H. Lin, H. W. Wan, C. P.
Cheng, T. W. Pi, J. R. Kwo, and M. Hong (2017, Jul). Elucidation of distinct
electric characteristics of ALD oxides on highly ordered GaAs(001) and
In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron
spectroscopy. 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado,
USA. 本人為通訊作者.
50. C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T.
Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong (2017, Jun).
Perfecting single-crystal growth of ternary hexagonal YAlO3 on Y2O3(111) and
GaAs(111)A via substrate induced epitaxy. 20th Conference on "Insulating Films
on Semiconductors" (INFOS), Potsdam, Germany. . 本人為通訊作者.
51. H. W. Wan, Y. H. Lin, K. Y. Lin, T. W. Chang, J. Kwo, M. Hong (2017, Jun).
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001)
interface. 20th Conference on "Insulating Films on Semiconductors", Potsdam,
Germany. 本人為通訊作者.
52. J. Kwo, M. Hong, and S. F. Lee (2017, Jun). Topological insulator-based
magnetic hetero-structures. 9th International Conference on Materials for
Advanced Technologies, Suntec, Singapore. 本人為通訊作者.
53. K. Y. Lin, L. B. Young, C. K. Cheng, K. H. Chen, Y. H. Lin, H. W. Wan, R. F.
Cai, S. C. Lo, M. Y. Li, J. Kwo, M. Hong (2017, Jun). Enhancement of dielectric
constant using high-temperature mixed and sub-nano-laminated atomic layer
deposited Y2O3/Al2O3 on GaAs (001). 20th Conference on "Insulating Films on
Semiconductors", Potsdam, Germany. 本人為通訊作者.
54. M. Hong (2017, Jun). Perfecting hetero-Interfaces of high-k and metal/high
mobility semiconductors in pushing device performances. TSMC Technical
Forum, Taiwan. 本人為第一作者、通訊作者.
55. T. W. Chang, K. Y. Lin, Y. H. Lin, L. B. Young, J. Kwo, M. Hong (2017, Jun).
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via
electrical responses - a comparative study. 20th Conference on "Insulating Films
on Semiconductors", Potsdam, Germany. . 本人為通訊作者.
56. C. N. Wu, Y. C. Liu, H. Y. Lin, K. H. M. Chen, S. R. Yang, C. C. Tseng, J. S.
Wei, C. C. Chen, S. W. Huang, S. L. Yeh, Y. H. Yen, C. W. Chao, L. U. Liang,
Germar Hoffmann, Y. T. Fanchiang, Y. H. Lin, Wesley Lin, C. K. Cheng, C. M.
Cheng, C. H. Hsu, T. R. Chang, S. F. Lee, J. G. Lin, M. Hong, and J. Raynien
Kwo (2017, May). Electronic property and spin transport of topological
insulator-based heterostructures. TCECM, Miaoli, Taiwan. 本人為通訊作者.
57. C. N. Wu, C. C. Tseng, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M.
Hong and J. Kwo (2017, Mar). High quality TmIG films with perpendicular
magnetic anisotropy grown by sputtering. APS March Meeting, New Orleans,
LA. 本人為通訊作者.
58. T. W. Pi, C.-P. Cheng, J. Kwo, and M. Hong (2017, Mar). Interfacial electronic
characterization of oxides/metals on high mobility semiconductors using in-situ
synchrotron radiation photoemission and the correlation with the interfacial
electric properties. The 2017 International Conference on Frontiers of
Characterization and Metrology for Nanoelectronics (FCMN), the Monterey
Marriott in Monterey, CA. 本人為通訊作者.
59. Y. T. Fanchiang, H. Y. Lin, C. C. Tseng, K. S. Chen, C. N. Wu, C. K. Cheng, S. F.
Lee, J. G. Lin, M. Hong and J. Kwo (2017, Mar). Ferromagnetic resonance study
of interlayer exchange coupling in topological insulator/ferrimagnetic insulator
heterostructure. APS March Meeting, New Orleans, LA. 本人為通訊作者.
60. C. C. Chen, K. H. Chen, H. Y. Lin, S. R. Yang, C. K. Cheng, C. M. Cheng, M.
Hong, and J. Kwo (2017, Jan). Topological Insulator thin films grown on αAl2O3 stepped terraces by molecular beam epitaxy. 中華民國物理年會,
Tamkang University, Taipei. 本人為通訊作者.
61. C. C. Tseng, C. N. Wu, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M.
Hong and J. Kwo (2017, Jan). High quality TmIG films with tunable
perpendicular magnetic anisotropy grown by sputtering. 中華民國物理年會,
Tamkang University, Taipei. 本人為通訊作者.
62. H. Y. Lin, K. H. Chen, S. W. Huang, C. C. Chen, J. W. Liu, W. C. Fan, W. C.
Chou, C. M. Cheng, M. Hong and J. Raynien Kwo (2017, Jan). Investigation of
the electronic structure of stanene on Bi2Te3 by ARPES. 中華民國物理年會,
Tamkang University, Taipei. 本人為通訊作者.
63. S. W. Huang, H. Y. Lin, S. R. Yang, K. H. Chen, C. K. Cheng, M. Hong, J.
Raynien Kwo (2017, Jan). Epitaxial Growth of Topological Insulator Bi2Te3
Thin Films on BaF2 (111) Substrates by MBE. 中華民國物理年會, Tamkang
University, Taipei. 本人為通訊作者.
64. Y. T. Fanchiang, H. Y. Lin, C. C. Tseng, K. S. Chen, C. N. Wu, C. K. Cheng, S. F.
Lee, J. G. Lin, M. Hong and J. Kwo (2017, Jan). Ferromagnetic resonance study
of interfacial exchange coupling in topological insulator/ferrimagnetic insulator
heterostructure. 中華民國物理年會, Tamkang University, Taipei. 本人為通訊作 者.
65. Yi-Ting Cheng, Wan-Sin Chen, Yen-Hsun Lin, Hsien-Wen Wan, Keng-Yung Lin,
Sin Wang, Chiu-Ping Cheng, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong (2017,
Jan). Synchrotron Radiation Photoemission Study Of Single Phase Ge (001)-2X1
Surface. 中華民國物理年會, Tamkang University, Taipei. 本人為通訊作者.
66. C. P. Cheng, W. S. Chen, K. Y. Lin, G. J. Wei, Y. T. Cheng, Y. H. Lin, H. W. Wan,
T. W. Pi, R. T. Tung, J. Kwo, and M. Hong (2016, Dec). Determination of
Schottky barrier height prior to metal formation. 47th IEEE Semiconductor
Interface Specialists Conference, San Diego, CA, USA. 本人為通訊作者.
67. H. W. Wan, K. Y. Lin, M. H. Chen, L. B. Young, Y. H. Lin, Y. C. Chang, T. D.
Lin, Y. T. Cheng, W. S. Chen, S. H. Chen, T. W. Pi, J. Kwo, and M. Hong (2016,
Dec). ALD Oxides In-situ on InGaAs - Perfecting Interfacial Electronic
Structures in Pushing High-Performance Inversion-Channel MOSFETs. 47th
IEEE Semiconductor Interface Specialists Conference, San Diego, CA, USA. 本
人為通訊作者.
68. W. S. Chen, Y. H. Lin, Y. T. Cheng, K. Y. Lin, T. W. Chang, H. W. Wan, C. P.
Cheng, T. W. Pi, J. Kwo, and M. Hong (2016, Dec). Relevance of GaAs(001)
surface electronic structure for high frequency dispersion on n-type accumulation
capacitance. 47th IEEE Semiconductor Interface Specialists Conference, San
Diego, CA, USA. 本人為通訊作者.
69. Y. H. Lin, Y. T. Cheng, W. S. Chen, K. Y. Lin, H. W. Wan, C. P. Cheng, T. W. Pi,
J. Kwo, and M. Hong (2016, Dec). Rebooting the interfacial knowledge of highk dielectrics on In0.53Ga0.47As(001)-4x2. 47th IEEE Semiconductor Interface
Specialists Conference, San Diego, CA, USA. 本人為通訊作者.
70. Y. H. Lin, Y. T. Cheng, W. S. Chen, K. Y. Lin, H. W. Wan, C. P. Cheng, T. W. Pi,
J. Kwo, and M. Hong (2016, Dec). Rebooting the interfacial knowledge of highk dielectrics on In0.53Ga0.47As(001)-4x2. 47th IEEE Semiconductor Interface
Specialists Conference, San Diego, CA, USA. 本人為通訊作者.
71. Y. T. Cheng, W. S. Chen, Y. H. Lin, H. W. Wan, K. Y. Lin, S. Wang, C. P. Cheng,
T. W. Pi, J. Kwo, and M. Hong (2016, Dec). Epi Ge(001)-2×1 surface aimed for
high-κ deposition: An electronic- structure study. 47th IEEE Semiconductor
Interface Specialists Conference, San Diego, CA, USA. 本人為通訊作者.
72. M. Hong, K. Y. Lin, H. W. Wan, L. B. Young, C. K. Cheng, Y. H. Lin, Y. T.
Cheng, W. S. Chen, C. H. Hsu, T. W. Pi, and J. Kwo (2016, Oct). (Keynote) ALD
oxides in-situ on semiconductors for perfecting interfaces in pushing highperformance MOSFETs and attaining single-crystal complex materials. The
3rd International Conference on ALD Applications & 2016
China ALD Conference, Suzhou, China. 本人為第一作者、通訊作者.
73. Bo-Yi Chen, Gung-Chian Yin, Shi-Hung Chang, Huang-Yeh Chen, Chien-Yu
Lee, Bi-Hsuan Lin, Shao-Chin Tseng, Jian-Xing Wu, Minghwei Hong, J.
Raynien Kwo, and Mau-Tsu Tang (2016, Sep). The Precision Adjustment Holder
for Montel Mirrors. 9th edition of the Mechanical Engineering Design of
Synchrotron Radiation Equipment and Instrumentation (MEDSI) conference,
Barcelona, Spain. 本人為通訊作者.
74. C. K. Cheng (鄭兆凱), H. Y. Lin (林孝于), K. H. Chen (陳可璇), X. Q. Zhang
(張鋅權), Y. H. Lee (李奕賢), C. H. Hsu (徐嘉鴻), M. Hong (洪銘輝), and J.
Kwo (郭瑞年) (2016, Sep). Structural analysis of Bi2Se3 thin films on various
substrates. the 22nd Users'Meeting and Workshops, National Synchrotron
Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.
75. C. K. Cheng, H. Y. Lin, K. H. Chen, X. Q. Zhang, Y. H. Lee, C. H. Hsu, M.
Hong, and J. Kwo (2016, Sep). Structural analysis of Bi2Se3 thin films on
various substrates. the 22nd Users' Meeting and Workshops, National
Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.
76. G. J. Lu (盧冠傑), C. K. Cheng (鄭兆凱), L. B. Young (楊博宇), K. Y. Lin (林耕
雍), C. N. Wu (巫啟男), C. H. Hsu (徐嘉鴻), B. M. Cheng (鄭炳銘), J. Kwo (郭
瑞年), and M. Hong (洪銘輝) (2016, Sep). Phase formation and
photoluminescence of single crystal Y3Al5O12 garnet on Gd3Ga5O12 garnet
substrate via a novel nano laminated-ALD. the 22nd Users' Meeting and
Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, . 本人為通訊作者.
77. G. J. Lu, C. K. Cheng, L. B. Young, K.Y. Lin, C.N. Wu, C.H. Hsu, B.M. Cheng,
J. Kwo, and M. Hong (2016, Sep). Phase formation and photoluminescence of
single crystal Y3Al5O12 garnet on Gd3Ga5O12 garnet substrate via a novel
nano laminated-ALD. the 22nd Users' Meeting and Workshops, National
Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.
78. H. W. Wan, K. Y. Lin, Y. K. Su, T. W. Chang, Y. H. Lin, W.C. Lee, Y. T.
Fanchiang, C. K. Cheng, C. H. Hsu, T. W. Pi, J. R. Kwo, and M. Hong (2016,
Sep). GaAs Metal-Oxide-Semiconductor Push with Molecular Beam Epitaxy
Y2O3 - in comparison with atomic layer deposited Al2O3. 19th International
Conference on Molecular Beam Epitaxy, Montpellier, France. 本人為通訊作者.
Outstanding Student MBE Award The Outstanding Student MBE Award is based
on the quality of the student's work and the excellence of their presentation and
includes students who either present their work orally or as a poster.
Presentations are judged at the conference and the best two papers are honored.
The Outstanding MBE Awrads have been awarded to Candice Thomas, from
CEA Grenoble, and to Hsien-Wen Wan from National Taiwan University..
79. L. B. Young (楊博宇), G. J. Lu (盧冠傑), C. K. Cheng (鄭兆凱), K. Y. Lin (林耕 雍), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞 年), and M. Hong (洪銘輝) (2016, Sep). Formation of yttrium aluminum
perovskite on GaAs with ALD-Y2O3/Al2O3 nano-multilayer. the 22nd Users'
Meeting and Workshops, National Synchrotron Radiation Research Center,
Hsinchu, Taiwan. 本人為通訊作者.
80. L. B. Young, G. J. Lu, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, C. H. Hsu,
J. Kwo, and M. Hong (2016, Sep). Formation of Yttrium Aluminum Perovskite
on GaAs with ALD-Y2O3/Al2O3 Nano-multilayer. the 22nd Users' Meeting and
Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.
81. M. Hong, P. Chang, T. D. Lin, H. W. Wan, Y. H. Chang, W.C. Lee, T. W. Pi, J.
Kwo (2016, Sep). Effective Surface Passivation of In0.53Ga0.47As (001) using
MBE- and ALD-HfO2. 19th International Conference on Molecular Beam
Epitaxy, Montpellier, France. 本人為第一作者、通訊作者.
82. W. S. Chen (陳婉馨), Y. T. Cheng (鄭伊婷), Y. H. Lin (林延勳), K. Y. Lin (林耕
雍), T. W. Pi (皮敦文), J. Kwo (郭瑞年), M. Hong (洪銘輝), and C.-P. Cheng
(鄭秋平) (2016, Sep). Synchrotron-radiation photoemission study of interfacial
electronic structure of Ag on GaAs(001)-4x6. the 22nd Users' Meeting and
Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan. 本人為通訊作者.
83. Y. H. Lin, K. Y. Lin, W. J. Hsueh, K. H. Chen, L. B. Young, T. W. Chang, H. W.
Wan, J. I. Chyi, J. Kwo, M. Hong (2016, Sep). Comparison of Molecular Beam
Epitaxy and Atomic Layer Deposited high-k oxide/III-V interface -
Y2O3/GaSb(001). 19th International Conference on Molecular Beam Epitaxy,
Montpellier, France. 本人為通訊作者.
84. Y. T. Cheng (鄭伊婷), H. Wang (王馨), W. S. Chen (陳婉馨), C. H. Wei (魏竟軒),
Y. H. Lin (林延勳), T. W. Pi (皮敦文), J. Kwo (郭瑞年), M. Hong (洪銘輝),
and C.-P. Cheng (鄭秋平) (2016, Sep). Interfacial electronic structure of gold on
p-In0.53Ga0.47As(001)-4×2: A Schottky barrier height study. the 22nd Users'
Meeting and Workshops, National Synchrotron Radiation Research Center,
Hsinchu, Taiwan. 本人為通訊作者.
85. H. Y. Lin, K. H. Chen, S. R. Yang, S. W. Huang, C. C. Chen, Y. H. Yen, C. K.
Cheng, X. Q. Zhang, Y. H. Lee, G. Hoffmann, S. C. Tseng, C. M. Cheng, C. H.
Hsu, M. Hong, J. Raynien Kwo (2016, Aug). High quality topological insulator
thin films and novel two dimensional materials grown by MBE. Max PlacnkPostech-Hsinchu Workshop on complex phase materials, Dresden, Germany. 本
人為通訊作者.
86. K. Y. Lin, Y. H. Lin, H. W. Wan, M. Hong, C. P. Cheng, T. W. Pi, W. S. Chen, Y.
T. Cheng, J. Kwo (2016, Aug). Synchrotron radiation photoemission study of
high dielectrics on III-Vs and energy barrier for metal-semiconductor
contacts. Max Placnk-Postech-Hsinchu Workshop on complex phase materials,
Dresden, Germany. 本人為通訊作者.
87. M. Hong, Y. H. Lin, K. Y. Lin, Y. T. Fanchiang, C. K. Cheng, T. W. Chang, L. B.
Young, H. W. Wan, M. H. Chen, J. Liu, J. Kwo, C. N. Wu, Y. C. Liu, H. Y. Lin,
K. H. M. Chen, T. W. Pi, C. H. Hsu, C. P. Cheng, and S. H. Chen (2016, Aug).
(Invited talk) Pushing the ultimate CMOS and beyond via perfecting high k- and
metal-semiconductor hetero-interfaces. Max Planck-Postech-Hsinchu Workshop
on complex phase materials, Dresden, Germany. 本人為第一作者、通訊作者.
88. Keng-Yung Lin, Tsung-Wen Chang, Chao-Kai Cheng, Yen-Hsun Lin, Lawrence
Young, Chun-Ting Wu, Chien-Hua Fu, Kuan-Hsiung Chen, Szu-Hung Chen,
Chia-Hung Hsu, J. Raynien Kwo, Minghwei Hong (2016, Jul). Low interfacial
trap densities in single crystal atomic-layer-deposited Y2O3 on GaAs(001).
American Vacuum Society - 16th International Conference on Atomic Layer
Deposition. 本人為通訊作者.
89. L. B. Young, G. J. Lu, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, C. H. Hsu,
J. Kwo, and M. Hong (2016, Jul). Formation of Yttrium Aluminum Perovskite on
GaAs and GaN utilizing ALD-Y2O3/Al2O3 nano-multilayer. American Vacuum
Society - 16th International Conference on Atomic Layer Deposition. 本人為通 訊作者.
90. M. Hong, Y. H. Lin, K. Y. Lin, Y. T. Fanchiang, J. Kwo, C. N. Wu, Y. C. Liu, H.
Y. Lin, T. W. Pi, C. P. Cheng, and S. H. Chen (2016, Jul). (Keynote lecture)
Perfecting Hetero-Interfaces for pushing the ultimate CMOS and beyond.
International Union of Materials Research Societies (IUMRS) - International
Conference on Electronic Materials (ICEM), Singapore. 本人為第一作者、通訊 作者.
91. T. W. Pi, C. P. Cheng, W. S. Chen, K. Y. Lin, S. Wang, Y. H. Lin, Y. T. Cheng, J.
R. Kwo, and M. Hong (2016, Jul). High-k oxides on pristine singe crystal III-V
surfaces studied by synchrotron radiation photoemission. International Union of
Materials Research Societies (IUMRS) - International Conference on Electronic
Materials (ICEM), Singapore. 本人為通訊作者.
92. T. W. Pi, K. Y. Lin, T. D. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, C. P. Cheng, J.
Kwo, M. Hong (2016, Jul). Synchrotron radiation photoemission study of
dielectric oxides grown by atomic layer deposition (ALD) on single-crystal
(In)GaAs surfaces. American Vacuum Society - 16th International
Conference on Atomic Layer Deposition, Dublin, Ireland. 本人為通訊作者.
93. T.-W. Pi, T. D. Lin, K. Y. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, J. Kwo, and
M. Hong (2016, Jun). Dielectric oxides grown by atomic layer deposition (ALD)
on single-crystal (In)GaAs surfaces studied by synchrotron radiation
photoemission. 2016 Compound Semiconductor Week, Toyama International
Conference Center, Toyama, Japan. 本人為通訊作者.
94. W.J. Hsueh, P.C. Chiu, M. Hong, J.I. Chyi (2016, Jun). Suppressing Ge diffusion
by GaAsSb for molecular beam epitaxy of InGaAs on Ge. 2016 Compound
Semiconductor Week, Toyama International Conference Center, Toyama, Japan. 本人為通訊作者.
95. M. H. Chen, J. Liu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, S.
H. Chen, J. Kwo, and M. Hong (2016, May). High-performance self-aligned
inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effecttransistors by in-situ atomic-layer-deposited Al2O3/Y2O3 gand TaN/TiN gate
stacks. Symposium on Nano Device Technology (SNDT), 奈米元件技術研討 會. 本人為通訊作者.
96. T. W. Chang, K. Y. Lin, C. H. Fu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B.
Young, G. J. Lu, J. Kwo, and M. Hong (2016, May). Effective surface
passivation of GaAs(001) using in-situ atomic-layer-deposited Y2O3.
Symposium on Nano Device Technology (SNDT), 奈米元件技術研討會. 本人 為通訊作者.
97. K. H. Chen, H. Y. Lin, C. Y. Wang, S. R. Yang, J. Kwo, C. K. Cheng, M. Hong,
X. Q. Zhang and Y. H. Lee (2016, Mar). High quality topological insulator thin
films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer.
2016 American Physical Society (APS) March meeting, Baltimore, MD, USA.
98. M. Hong, Y. H. Lin, K. Y. Lin, J. Kwo, T. W. Pi, J. I. Chyi, and S. H. Chen (2016,
Mar). (Invited talk) Perfecting high k/semiconductor interface for high performance n- and p-MOSFETs with common gate dielectrics using a CMOS
compatible process. 2016 EMN Meeting on Field-Effect Transistors, Kaohsiung,
Taiwan. 本人為第一作者、通訊作者.
99. Y. T. Fanchiang, C. K. Cheng, M. Hong, H. Y. Lin, K. H. Chen, S. R. Yang, C. N.
Wu, J. Kwo, and S. F. Lee (2016, Mar). Detection of topological surface states
by spin pumping at room temperature. 2016 American Physical Society (APS)
March meeting, Baltimore, MD, USA.
100. C. K. Cheng, H. Y. Lin, K. H. Chen, X. Q. Zhang, Y. H. Lee, C. H. Hsu, J. Kwo,
and M. Hong (2016, Jan). Structural analysis of Bi2Se3 thin films on various
substrates. Annual Meeting of the Physical Society of the Republic of China,
2016. 本人為通訊作者.
101. G. J. Lu, C. K. Cheng, L. B. Young, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo,
and M. Hong (2016, Jan). Mechanism of forming perovskite and garnet
structures using atomic-layer deposited Y2O3-Al2O3. Annual Meeting of the
Physical Society of the Republic of China, 2016. 本人為通訊作者.
102. H. W. Wan, Y. C. Chang, T. D. Lin, M. H. Chen, K. Y. Lin, S. H. Chen, T. W. Pi,
J. Kwo, M. Hong (2016, Jan). In-situ Atomic-Layer-Deposited Al2O3 on
In0.53Ga0.47As - Push of High Performance Inversion-Channel MOSFET.
Annual Meeting of the Physical Society of the Republic of China, 2016. 本人為 通訊作者.
103. K. Y. Lin, C. H. Fu, K. H. Chen, Y. H. Lin, L. B. Young, J. Kwo, and M. Hong
(2016, Jan). Effect of Ultra-high Vacuum Annealing on ALD-Y2O3/GaAs
Heterostructure Studied by in-situ X-ray Photoelectron Spectroscopy. Annual
Meeting of the Physical Society of the Republic of China, 2016. 本人為通訊作 者.
104. L. B. Young, C. K. Cheng, G. J. Lu, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo, M.
Hong (2016, Jan). Formation of single-crystal hexagonal Yttrium Aluminum
Perovskite on GaAs(111)A utilizing ALD-Y2O3/Al2O3 multilayer with postdeposition annealing. Annual Meeting of the Physical Society of the Republic of
China, 2016. 本人為通訊作者.
105. M. H. Chen, J. Liu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, J.
Kwo, and M. Hong (2016, Jan). High-performance self-aligned inversionchannel In0.53Ga0.47As metal-oxide semiconductor field-effect- transistors by
in-situ atomic-layer-deposited Y2O3. Annual Meeting of the Physical Society of
the Republic of China, 2016. 本人為通訊作者.
106. T. W. Chang, K. Y. Lin, C. H. Fu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young,
G. J. Lu, C. T. Wu, J. Kwo, and M. Hong (2016, Jan). Surface passivation of
GaAs(001) using atomic-layer-deposition Y2O3 and ultra-high vacuum
annealing. Annual Meeting of the Physical Society of the Republic of China,
2016. 本人為通訊作者.
107. Y. C. Liu, C. N. Wu, Y. T. Fan-Chiang, L. C. Chang, S. F. Lee, M. Hong, and J.
Kwo (2016, Jan). Detection of current induced spin torque ferromagnetic
resonance in ferromagnetic insulator/heavy metal heterostructures. 2016 Joint
MMM-Intermag Conference, San Diego, California, USA.
108. Y. H. Lin, K. Y. Lin, L. B. Young, K. H. Chen, C. H. Fu, W. J. Hsueh, G. J.
Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong (2016, Jan). Atomic Layer
Deposited Rare Earth Oxide Y O on n-GaSb(001). Annual Meeting of the ₂ ₃
Physical Society of the Republic of China, 2016. 本人為通訊作者.
109. Yi-Ting Cheng, Wan-Sin Chen, Guo-Jhen Wei, Hsin Wang, Ching-Hsuan Wei,
Yu-Cheng Lin, Yen-Hsun Lin, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong, and
Chiu-Ping Cheng (2016, Jan). Interfacial Electronic Structure of Al on pGaAs(001) : A Synchrotron-Radiation Photoemission Study of Schottky Barrier
Height. Annual Meeting of the Physical Society of the Republic of China, 2016. 本人為通訊作者.
110. K. Y. Lin, Y. H. Lin, K. H. Chen, L. B. Young, C. H. Fu, C. P. Cheng, T. W. Pi, J.
Kwo, and M. Hong (2015, Dec). Enhanced ALD-Y2O3 Thin Film Quality and
Interface Cleansing Achieved by UHV Annealing for III-V Passivation. 46th
IEEE Semiconductor Interface Specialists Conference (SISC), Key Bridge
Marriott, Arlington, VA. 本人為通訊作者.
111. T. W. Pi, C. P. Cheng, Y. T. Cheng, W. S. Chen, S. Wang, G. J. Wei, C. H. Wei, Y.
C. Lin, Y. H. Chang, Y. H. Lin, J. Kwo, and M. Hong (2015, Dec). Interfacial
electronic structure of aluminum on GaAs(001)-4x6: Re-examination of the
interface with ALD tri-methylaluminum and water. The 46th IEEE
Semiconductor Interface Specialists Conference (SISC), Key Bridge Marriott,
Arlington, VA.
112. W. S. Chen, C. P. Cheng, G. J. Wei, Y. T. Cheng, C. H. Wei, Y. C. Lin, Y. H. Lin,
K. Y. Lin, T. W. Pi, J. Kwo, and M. Hong (2015, Dec). Interfacial electronic
structure of the noble metals on 2-GaAs(001)-2x4 surface. 46th IEEE
Semiconductor Interface Specialists Conference (SISC), Key Bridge Marriott,
Arlington, VA. 本人為通訊作者.
113. M. Hong, J. Kwo, T. W. Pi, J. I. Chyi, S. H. Chen, and G. J. Brown (2015, Oct).
(Invited talk) Perfecting high k/semiconductor interface leading to high
performance n- and p-MOSFETs with a common high k gate dielectric using a
CMOS compatible process. Joint US- Korea NBIT-Taiwan Nanoscience Program
Review and Technical Exchange, Seoul, South Korea. 本人為第一作者、通訊作 者.
114. C. H. Fu, Y. H. Lin, W. C. Lee, T. D. Lin, R. L. Chu, L. K. Chu, P. Chang, M. H.
Chen, W. J. Hsueh, S. H. Chen, G. J. Brown, J. I. Chyi, J. Kwo, and M. Hong
(2015, Jun). Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge
MOSFETs with a common high gate dielectric using a CMOS compatible
process. 19th Conference on "Insulating Films on Semiconductors", Udine, Italy. 本人為通訊作者.
115. S. Y. Wu, K. H. Chen, Y. H. Lin, C. K. Cheng, C. H. Hsu, J. Kwo, and M. Hong
(2015, Jun). Single-crystal atomic layer deposited Y2O3 on GaAs(001) - growth,
structural, and electrical characterization. 19th Conference on "Insulating Films
on Semiconductors", Udine, Italy. 本人為通訊作者.
116. C. Y. Wang, H. Y. Lin, Y. H. Lin, K. H. M. Chen, K. H. Chen, S. Z. Yang, B. Y.
Yang, Z. J. Peng, C. H. Hsu, S. F. Lee, M. Hong, J. Kwo (2015, Mar).
Demonstration of large field effect in topological insulator films via a high-κ
back gate. American Physical Society (APS) March meeting, San Antonio,
Texas, USA.
117. H.Y. Lin, C. Y. Wang,, K. H. M. Chen, Y. H. Lin, K. H. Chen, B. Y. Yang, M.
Hong, and J. Kwo (2015, Mar). Investigation of the transport properties of
Bi2Se3 films grown on various substrates. American Physical Society (APS)
March meeting, San Antonio, Texas, USA.
118. C. K. Cheng, S. Y. Wu, K. H. Chen, C. H. Hsu, J. Kwo, and M. Hong (2015,
Jan). Atomic layer deposited Y2O3 on GaAs(001)-4x6 - thickness dependence of
crystallographic structures and electrical properties and the correlation. 中華民 國物理年會, National Tsing Hua University, Hsinchu. 本人為通訊作者.
119. G.J Wei, W.S. Chen, Y.T. Cheng, C.H. Wei, Y.C. Lin, Y.H. Lin, T.W. Pi, J. Kwo,
M. Hong, and C.P. Cheng (2015, Jan). Interfacial Electronic Structure of Gold on
GaAs(001)-2x4: A Schottky-Barrier-Height Study. 中華民國物理年會, National
Tsing Hua University, Hsinchu. 本人為通訊作者.
120. K. Chen, B. Yang, Y. H. Lin, K. Y. Lin, S. Y. Wu, C. K. Cheng, T. W. Chang, C.
H. Hsu, J. Kwo, and M. Hong (2015, Jan). Single-crystal atomic-layer-deposition
Y2O3 on GaAs with high thermal stability and low interfacial trap densities. 中
華民國物理年會, National Tsing Hua University, Hsinchu. 本人為通訊作者.
121. K. H. Chen, H. Y. Lin, C. K. Cheng, C. Y. Wang, X. Q. Zhang, Y. H. Lee, C. M.
Cheng, M. Hong, and J. Kwo (2015, Jan). The effect of substrates on the material
properties of topological insulator films. 中華民國物理年會, National Tsing
Hua University, Hsinchu.
122. M. Hong, J. Kwo, T. W. Pi, C. H. Hsu, T. D. Lin, W. C. Lee, Y. C. Chang, and H.
Y. Hung (2015, Jan). (Invited talk) Pushing the ultimate CMOS and beyond.
Physics Society ROC Annual Meeting - 美國真空學會台灣分會 American
Vacuum Society (AVS) Taiwan Chapter Session, Topic "New Developments in
Atomic Layer Deposition Technology, National Tsing Hua University, Hsinchu,
Taiwan. 本人為第一作者、通訊作者.
123. Wan-Sin Chen, Guo-Jhen Wei, Yi-Ting Cheng, Ching-Hsuan Wei, Yu-Cheng Lin,
Yen-Hsun Lin, Tun-Wen Pi, R. Kwo, M. Hong, and Chiu-Ping Cheng (2015,
Jan). Interfacial Electronic Structure of Silver on GaAs(001)-2x4:
A Schottky barrier-height study. 中華民國物理年會, National Tsing Hua University,
Hsinchu. 本人為通訊作者.
124. Y. H. Lin, R. L. Chu, W. J. Hsueh, K. Y. Lin, T. H. Chiang, C. H. Fu, G. J.
Brown, T. W. Pi, J. I. Chyi, J. Kwo and M. Hong (2015, Jan). Passivation of
GaSb using rare earth oxide Y2O3- a comparative study of Molecular Beam
Epitaxy and Atomic Layer Deposition. 中華民國物理年會, National Tsing Hua
University, Hsinchu. 本人為通訊作者.
125. Y. W. Chen, Y. C. Liu, Y. H. Lin, C. K. Cheng, K. Y. Lin, S. Y. Wu, T. H. Chiang,
H. Y. Hung, S. C. Tseng, C. H. Hsu, T. W. Pi, J. Kwo, and M. Hong (2015, Jan).
Surface morphology evolution of Fe3Si on GaAs(100)-4x6 and GaAs(111)A-2x2
- Atomic layer-by-layer growth studied by scanning tunneling microscopy. 中華 民國物理年會, National Tsing Hua University, Hsinchu. 本人為通訊作者.
126. K. Y. Lin, B. Z. Syu, Y. H. Lin, Z. J. Peng, J. F. Lee, C. H. Fu, H. W. Wan, C. P.
Cheng, T. W. Pi, J. Kwo, and M. Hong (2014, Dec). Direct Determination of
Schottky Barrier Heights and Band Bending between Fe3Si and GaAs(100) by
In-Situ XPS/UPS. 45th IEEE Semiconductor Interface Specialists Conference
(SISC), Bahia Resort Hotel, San Diego, CA. 本人為通訊作者.
127. M. Hong (2014, Dec). Beyond CMOS. Workshop, Department of Physics,
National Tsing Hua University, Hsinchu, Taiwan. 本人為第一作者、通訊作者.
128. M. Hong (2014, Dec). Beyond Si CMOS - Physics and Perspectives. Workshop,
Department of Electro-Physics, National Chiao Tung University, Hsinchu,
Taiwan. 本人為第一作者、通訊作者.
129. T. W. Pi, Y. T. Fanchiang, Y. H. Lin, T. H. Chiang, K. Y. Lin, Y. K. Su, C. H. Wei,
Y. C. Lin, G. K. Wertheim, J. Kwo, and M. Hong (2014, Dec). (Invited talk)
High k oxides on (In)GaAs surfaces studied by synchrotron radiation
photoemission. 45th IEEE Semiconductor Interface Specialists Conference
(SISC), Bahia Resort Hotel, San Diego, CA. 本人為通訊作者.
130. Y. H. Lin, R. L. Chu, W. J. Hsueh, K. Y. Lin, T. H. Chiang, C. H. Fu, T. W. Pi, J.
I. Chyi, J. Kwo, and M. Hong (2014, Dec). Comparison of MBE-Y2O3 and
ALD-Y2O3 passivated n-GaSb(100). 45th IEEE Semiconductor Interface
Specialists Conference (SISC), Bahia Resort Hotel, San Diego, CA. 本人為通訊 作者.
131. J. Raynien Kwo and Minghwei Hong (2014, Oct). Topological insulator thin
films for spintronics. The 1st International Beyond CMOS Workshop, IMEC,
Leuven, Belgium. 本人為通訊作者.
132. P. H. Lin, J. F. Lee, C. Y. Wang, H. Y. Lin, C. K. Cheng, Y. C. Liu, M. Hong, and
J. Kwo (2014, Sep). Material and physical properties of topological insulator
Bi2Te3 thin films by molecular beam epitaxy. 18th International Conference on
Molecular Beam Epitaxy, High Country Conference Center, Flagstaff, AZ, USA.
133. Y. C. Liu , Y. W. Chen, T. H. Chiang, H. Y. Hung, Y. H. Lin, C. K. Cheng, S. H.
Tseng, C. H. Hsu, T. W. Pi, J. Kwo, and M. Hong (2014, Sep). Surface
morphology evolution of Fe3Si on GaAs(100) and GaAs(111)A - Atomic layer-by-layer growth studied by scanning tunneling microscopy. 18th International
Conference on Molecular Beam Epitaxy, High Country Conference Center,
Flagstaff, AZ, USA.
134. M. Hong (2014, May). High k dielectrics on high carrier mobility
semiconductors for ultimate CMOS and beyond- accomplishments and the
remaining challenges. the 11th Taiwan-U.S. AFOSR Nanoscience Program
Review & Workshop, National Dong Hwa University, Hualien, Taiwan. 本人為 第一作者、通訊作者.
135. W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong (2014, May).
High /III-V for ultimate CMOS - interfacial passivation, low ohmic contacts,
and device performance. The 225th ECS meeting, Orlando, FL. 本人為通訊作 者.
136. M. Hong (2014, Apr). High k dielectrics on high carrier mobility semiconductors
for ultimate CMOS - accomplishments and the remaining challenges. TSMC,
Hsinchu, Taiwan. 本人為第一作者、通訊作者.
137. H. Y. Hung, H. Y. Ling, T. H. Chiang, B. Z. Syu, J. G. Lin, S. F. Lee, M. Hong,
and J. Kwo (2014, Mar). Investigation of Spin Pumping in Fe3Si/GaAs and
Fe3Si/Bi2Se3 Bilayer Structure. American Physical Society (APS) March
meeting, Colorado Convention Center, Denver, Colorado, USA.
138. Minghwei Hong and J. Raynien Kwo (2014, Mar). Perfecting high k/GaSb(100)
interface using molecule beam epitaxy Y2O3. Air Force Research Laboratory
(Wright-Patterson Air Force Base (WPAFB)), Dayton, Ohio. 本人為第一作者、 通訊作者.
139. B. Z. Syu(許倍準), H.Y. Hung(洪宏宜), T. H. Chiang(江宗鴻), J. G. Lin(林昭 吟), S. F. Lee(李尚凡), M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan).
The dependence of spin-injection efficiency on Schottky barrier heights between
Fe¬3Si and n-(or p-) GaAs(100). 中華民國物理年會, National Chung Hsing
University, Taichung. 本人為通訊作者.
140. C. Y. Wang(王澄宇), C. Y. Lin(林孝于), Po-Hao Lin(林柏皓), Jian-Feng Li(李
健逢), S. F. Lee(李尚凡), M. Hong(洪銘輝), and J. Kwo(郭瑞年) (2014, Jan).
Transport and XPS study of topological insulator: Bismuth Selenide and
Bismuth Telluride. 中華民國物理年會, National Chung Hsing University, Taichung.
141. C.H. Fu(傅千驊), W. H. Chang (張文馨), R. L. Chu(朱瑞霖), T. D. Lin(林宗達),
T. H. Chiang(江宗鴻), Y. D. Wu(吳彥達), J. Kwo(郭瑞年) and M. Hong(洪銘 輝) (2014, Jan). An Investigation of Ni-InGaAs Source/Drain Ohmic Contact for III-V CMOS.
中華民國物理年會, National Chung Hsing University, Taichung. 本人為通訊作者.
142. Jian-Feng Li(李健逢), Po-Hao Lin(林柏皓), Hsiao-Yu Lin(林孝于), Cheng-Maw Cheng (鄭澄懋), M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan).
ARPES and XPS study of Bi2Se3 and Bi2Te3 thin films: the relationship
between chemical composition and doping level on as-grown TI films. 中華民國 物理年會, National Chung Hsing University, Taichung.
143. M. Hong, T. D. Lin, W. H. Chang, R. L. Chu, Y. C. Chang, J. Kwo, H. Y. Hung,
and T. W. Pi (2014, Jan). Pushing the ultimate CMOS and beyond. Special forum
"5 nm CMOS and beyond", 2014 Annual Physical Society Rep. of China
Meeting, National Chung Hsin University, Taichung, Taiwan. 本人為第一作者、 通訊作者.
144. P. H. Lin(林柏皓), C. Y. Lin(林孝于), J. F. Lee(李健逢), Z. K. Zheng(鄭兆凱),
M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan). Materials Properties of
High-Quality Bi2Te3 Thin Films by Molecular Beam Epitaxy. 中華民國物理年 會, National Chung Hsing University, Taichung.
145. S. Y. Huyan(呼延澍元), C. N. Wu(巫啟男), J. Y. Lee(李俊逸), Y. C. Liu(劉有騏), J. F. Lee(李健逢), H. Y. Lin(林孝于), Y. W. Chen(陳昱維), T. L. Hung(洪慈蓮), M. Hong(洪銘輝), and J. Kwo (郭瑞年) (2014, Jan). Epitaxial thin film growth of perovskite Sr2RuO4 by pulsed laser deposition. 中華民國物理年會, National Chung Hsing University, Taichung.
146. Y. T. Fanchiang(范姜宇廷), Y. K. Su(蘇毓凱), K. S. Chen(陳冠雄), Y. C. Chang(張耀中),
T. H. Chiang(江宗鴻), J. Kwo (郭瑞年) and M. Hong(洪銘輝) (2014, Jan).
Comparison of methods to extract interface state densities at atomic layer-deposited high-k dielectric/ III-V heterostructures. 中華民國物理年會,
National Chung Hsing University, Taichung. 本人為通訊作者.
147. Y. W. Chen(陳昱維), Y. C. Liu(劉有騏), T. H. Chiang(江宗鴻), H. Y. Hung(洪
宏宜), M. Hong(洪銘輝), and J. Kwo(郭瑞年) (2014, Jan). Growth Mechanism
of Fe3Si on GaAs(100) and GaAs(111) by Scanning Tunneling Microscopy. 中
華民國物理年會, National Chung Hsing University, Taichung. 本人為通訊作者.
148. M. Hong (2014). High k dielectrics on high carrier mobility semiconductors for
ultimate CMOS - accomplishments and the remaining challenges. The National
Nano Device Laboratories (NDL), Hsinchu, Taiwan. 本人為第一作者、通訊作者.
